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BC808F . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BC808F
   Código: MA
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-base (Vcb): 30 V
   Tensión colector-emisor (Vce): 25 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.8 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 100 MHz
   Capacitancia de salida (Cc): 16 pF
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: SOT23
 

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BC808F Datasheet (PDF)

 ..1. Size:268K  auk
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BC808F

BC808FPNP Silicon TransistorDescriptions PIN Connection High current application Switching application 3 Features 1 Suitable for AF-Driver stage and low power output stages 2 SOT-23F Complementary pair with BC818F Ordering Information Type NO. Marking Package Code MA BC808F SOT-23F Device Code hFE Rank Year&W

 9.1. Size:72K  fairchild semi
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BC808F

BC807/BC808Switching and Amplifier Applications Suitable for AF-Driver stages and low power output stages3 Complement to BC817/BC8182SOT-2311. Base 2. Emitter 3. Collector PNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCES Collector-Emitter Voltage : BC807 -50 V: BC808 -30 VVCEO Collector-

 9.2. Size:73K  samsung
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BC808F

BC807/BC808 PNP EPITAXIAL SILICON TRANSISTORSWITCHING AND AMPLIFIER APPLICATIONSSOT-23 Sutable for AF-Driver stages and low power output stages Complement to BC817/BC818ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector Emitter Voltage :BC807 VCES -50 V:BC808 -30 VCollector Emitter Voltage :BC807 VCEO -45 V:BC808 -25 VEmitter-Base Voltage

 9.3. Size:49K  diodes
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BC808F

SOT23 PNP SILICON PLANARBC807MEDIUM POWER TRANSISTORSBC808ISSUE 4 JUNE 1996 T I D T I 8 D 8 8 E 8 8 8 C 8 8 8 8 8 8 B T T 8 8 8 8 8 8SOT23ABSOLUTE MAXIMUM RATINGS. T 8 8 8 IT II V I V V II i V I V V i V I V V I I i II I I I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T I T IT DIT

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: FT411 | D60T7550 | BUW133H | MM869B | JE8550 | MM3000 | HEPS9144

 

 
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