BC858U. Equivalente. Reemplazo. Todos los transistores. Hoja de especificaciones. Principales características

..1. Size:269K auk
bc858u.pdf pdf_icon

BC858U PNP Silicon Transistor Descriptions PIN Connection General purpose application Switching application 3 Features 1 High voltage VCEO=-30V 2 Complementary pair with BC848U SOT-323 Ordering Information Type NO. Marking Package Code AV BC858U SOT-323 Device Code hFE Rank Year&Week Code Absolute maximum r

0.1. Size:178K auk
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BC858UF Semiconductor Semiconductor PNP Silicon Transistor Descriptions General purpose application Switching application Features High voltage VCEO=-30V Complementary pair with BC848UF Ordering Information Type NO. Marking Package Code BC858UF AV SOT-323F hFE rank Outline Dimensions unit mm 1.95 2.25 1.20 1.40 1 3 2 PIN Connect

9.1. Size:251K motorola
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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC856AWT1/D General Purpose Transistors BC856AWT1,BWT1 PNP Silicon BC857AWT1,BWT1 COLLECTOR BC858AWT1,BWT1, These transistors are designed for general purpose amplifier 3 applications. They are housed in the SOT 323/SC 70 which is CWT1 designed for low power surface mount applications. 1 Motorola Preferred Devices B

9.2. Size:249K motorola
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9.3. Size:157K philips
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DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D102 BC856W; BC857W; BC858W PNP general purpose transistors Product data sheet 2002 Feb 04 Supersedes data of 1999 Apr 12 NXP Semiconductors Product data sheet BC856W; BC857W; PNP general purpose transistors BC858W FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 65 V). 1 base 2 emitter

9.4. Size:46K philips
bc856f bc857f bc858f.pdf pdf_icon

DISCRETE SEMICONDUCTORS DATA SHEET M3D425 BC856F; BC857F; BC858F series PNP general purpose transistors 1999 May 21 Preliminary specification Supersedes data of 1998 Nov 10 Philips Semiconductors Preliminary specification PNP general purpose transistors BC856F; BC857F; BC858F series FEATURES PINNING Power dissipation comparable to SOT23 PIN DESCRIPTION Low current (max. 10

9.5. Size:158K philips
bc856 bc857 bc858.pdf pdf_icon

DISCRETE SEMICONDUCTORS DATA SHEET BC856; BC857; BC858 PNP general purpose transistors Product data sheet 2004 Jan 16 Supersedes data of 2003 Apr 09 NXP Semiconductors Product data sheet PNP general purpose transistors BC856; BC857; BC858 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 65 V). 1 base 2 emitter APPLICATIONS 3 collector G

9.6. Size:44K st
bc857 bc858.pdf pdf_icon

BC857 BC858 SMALL SIGNAL PNP TRANSISTORS Type Marking BC857A 3E BC857B 3F BC858A 3J BC858B 3K 2 SILICON EPITAXIAL PLANAR PNP TRANSISTORS 3 MINIATURE PLASTIC PACKAGE FOR 1 APPLICATION IN SURFACE MOUNTING CIRCUITS SOT-23 VERY LOW NOISE AF AMPLIFIER NPN COMPLEMENTS FOR BC857 IS BC847 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit BC857 BC8

9.7. Size:144K fairchild semi
bc856 bc857 bc858 bc859 bc860.pdf pdf_icon

August 2006 BC856- BC860 tm PNP Epitaxial Silicon Transistor Features Switching and Amplifier Applications Suitable for automatic insertion in thick and thin-film circuits 3 Low Noise BC859, BC860 Complement to BC846 ... BC850 2 SOT-23 1 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings* Ta = 25 C unless otherwise noted Symbol Parameter Value Units VCBO

9.8. Size:157K nxp
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DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D102 BC856W; BC857W; BC858W PNP general purpose transistors Product data sheet 2002 Feb 04 Supersedes data of 1999 Apr 12 NXP Semiconductors Product data sheet BC856W; BC857W; PNP general purpose transistors BC858W FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 65 V). 1 base 2 emitter

9.9. Size:201K nxp
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BC856; BC857; BC858 65 V, 100 mA PNP general-purpose transistors Rev. 7 16 April 2018 Product data sheet 1 Product profile 1.1 General description PNP general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package NPN complement Nexperia JEDEC BC856 SOT23 TO-236AB BC846 BC856A BC846A BC856B BC84

9.10. Size:158K nxp
bc856 bc856a bc856b bc857 bc857a bc857b bc857c bc858.pdf pdf_icon

DISCRETE SEMICONDUCTORS DATA SHEET BC856; BC857; BC858 PNP general purpose transistors Product data sheet 2004 Jan 16 Supersedes data of 2003 Apr 09 NXP Semiconductors Product data sheet PNP general purpose transistors BC856; BC857; BC858 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 65 V). 1 base 2 emitter APPLICATIONS 3 collector G

9.11. Size:56K samsung
bc856 bc857 bc858 bc859 bc860.pdf pdf_icon

PNP EPITAXIAL BC856/857/858/859/860 SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS SOT-23 Sutable for automatic insertion in thick and thin-film circuits LOW NOISE BC859, BC860 Complement to BC846 ... BC850 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO BC856 -80 V BC857/860 -50 V BC858/859 -30 V Collecto

9.12. Size:273K siemens
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PNP Silicon AF Transistors BC 856W ... BC 860W Features For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types BC 847W, BC 848W, BC 849W, BC 850W (NPN) Type Marking Ordering Code Pin Configuration Package1) (tape and reel) 1 2 3 BC 856 AW 3As Q62702-C2335 B E C SOT-323 BC 856

9.13. Size:271K siemens
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PNP Silicon AF Transistors BC 856 ... BC 860 Features For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types BC 846, BC 847, BC 849, BC 850 (NPN) Type Marking Ordering Code Pin Configuration Package1) (tape and reel) 1 2 3 BC 856 A 3As Q62702-C1773 B E C SOT-23 BC 856 B 3Bs Q6

9.14. Size:141K rohm
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BC858BW / BC858B Transistors PNP General Purpose Transistor BC858BW / BC858B External dimensions (Unit mm) Features 1) BVCEO

9.15. Size:81K rohm
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BC858BW / BC858B Transistors PNP General Purpose Transistor BC858BW / BC858B External dimensions (Units mm) Features 1) BVCEO

9.16. Size:117K diodes
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BC856AW - BC858CW PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Ideally Suited for Automated Insertion SOT-323 Complementary NPN Types Available (BC846W-BC848W) C Dim Min Max For Switching and AF Amplifier Applications A 0.25 0.40 Lead Free/RoHS Compliant (Note 3) B C B 1.15 1.35 "Green" Device (Note 4 and 5) C 2.00 2.20 BE D 0.65 Nominal

9.17. Size:113K diodes
bc856 bc857 bc858.pdf pdf_icon

BC856A - BC858C PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR Please click here to visit our online spice models database. Features Ideally Suited for Automatic Insertion Complementary NPN Types Available (BC846-BC848) A SOT-23 For Switching and AF Amplifier Applications C Dim Min Max Qualified to AEC-Q101 Standards for High Reliability A 0.37 0.51 B C Lead

9.18. Size:35K diodes
bc856 bc857 bc858 bc859 bc860.pdf pdf_icon

SOT23 PNP SILICON PLANAR BC856 BC857 BC858 BC859 GENERAL PURPOSE TRANSISTORS BC860 ISSUE 6 - APRIL 1997 T I D T I T T E 8 8 8 8 8 C 8 8 8 8 8 8 8 8 8 8 B 8 8 8 8 8 8 8 8 SOT23 8 8 8 8 8 8 ABSOLUTE MAXIMUM RATINGS. T 8 8 8 8 8 8 IT II V I V 8 V II i V I V 8 V II i V I V V i V I V V i II I I I I I Di i i T i T T T ELECTRICAL CH

9.19. Size:203K diodes
bc856aw-bc858cw.pdf pdf_icon

BC856AW-BC858CW PNP SMALL SIGNAL TRANSISTOR IN SOT323 Features Mechanical Data Ideally Suited for Automatic Insertion Case SOT323 Complementary NPN Types Available (BC846AW BC848CW) Case material molded plastic, Green molding compound For switching and AF Amplifier Applications UL Flammability Classification Rating 94V-0 Totally Lead-Free & Ful

9.20. Size:290K diodes
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BC856A-BC858C PNP SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Ideally Suited for Automatic Insertion Case SOT23 Complementary NPN Types BC846 BC848 Case Material Molded Plastic, Green Molding Compound For Switching and AF Amplifier Applications UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (Not

9.21. Size:354K diodes
bc856a-bc858c.pdf pdf_icon

BC856A-BC858C PNP SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Ideally Suited for Automatic Insertion Case SOT23 Complementary NPN Types BC846 BC848 Case Material Molded Plastic, Green Molding Compound For Switching and AF Amplifier Applications UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (Not

9.22. Size:140K infineon
bc856a bc856b bc856bw bc857a bc857b bc857bf bc857bl3 bc857bw bc857c bc857cw bc858a bc858b bc858bl3 bc858bw bc858c bc858cw bc859b bc859c bc860b bc860bw bc860cw.pdf pdf_icon

BC856...-BC860... PNP Silicon AF Transistor For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 hz and 15 kHz Complementary types BC846...-BC850... (NPN) Pb-free (RoHS compliant) package1) Qualified according AEC Q101 1 Pb-containing package may be available upon special request 20

9.23. Size:861K infineon
bc857a bc857b bc857bl3 bc857bw bc857c bc857cw bc858a bc858b bc858bw bc858c bc858cw bc859c bc860b bc860bw bc860cw.pdf pdf_icon

BC857...-BC860... PNP Silicon AF Transistor For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 hz and 15 kHz Complementary types BC847...-BC850... (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q1011) 1 BC857BL3 is not qualified according AEC Q101 Type Marking Pin

9.24. Size:140K infineon
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BC856...-BC860... PNP Silicon AF Transistor For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 hz and 15 kHz Complementary types BC846...-BC850... (NPN) Pb-free (RoHS compliant) package1) Qualified according AEC Q101 1 Pb-containing package may be available upon special request 20

9.25. Size:778K mcc
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BC856AW THRU BC858CW Features Halogen free available upon request by adding suffix "-HF" Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating PNP Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS General Purpose Compliant. See Ordering Information) Transistors Maximum Ratings @ 25 C Unless Otherwise Specified Operating Junction Tempera

9.26. Size:890K mcc
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BC858A,BC858B,BC858C Features For Switching and AF Amplifier Applications Halogen Free. "Green" Device (Note 1) PNP Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating Small Signal Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Transistor Compliant. See Ordering Information) Maximum Ratings SOT-23 Operating Junction Temper

9.27. Size:195K mcc
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BC856A MCC Micro Commercial Components TM THRU 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone (818) 701-4933 BC858C Fax (818) 701-4939 Features PNP Small Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability rating Signal Transistor Moisure Sensitivity Level 1

9.28. Size:148K onsemi
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BC856ALT1G Series General Purpose Transistors PNP Silicon Features www.onsemi.com S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 COLLECTOR Qualified and PPAP Capable 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) 2

9.29. Size:82K onsemi
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BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G, SBC857BDW1T1G Series, BC858CDW1T1G Series www.onsemi.com Dual General Purpose Transistors PNP Duals SOT-363/SC-88 These transistors are designed for general purpose amplifier CASE 419B STYLE 1 applications. They are housed in the SOT-363/SC-88 which is designed for low power surface mount applications. (3) (2) (1) Features S

9.30. Size:156K onsemi
bc856bdw1t1g sbc856bdw1t1g bc857bdw1t1g sbc857bdw1t1g bc857cdw1t1g sbc857cdw1t1g bc858cdw1t1g.pdf pdf_icon

BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G, SBC857BDW1T1G Series, BC858CDW1T1G Series www.onsemi.com Dual General Purpose Transistors PNP Duals SOT-363/SC-88 These transistors are designed for general purpose amplifier CASE 419B STYLE 1 applications. They are housed in the SOT-363/SC-88 which is designed for low power surface mount applications. (3) (2) (1) Features S

9.31. Size:81K onsemi
bc858awt1g bc856bwt1g.pdf pdf_icon

BC856B, BC857B, BC858A General Purpose Transistors PNP Silicon These transistors are designed for general purpose amplifier www.onsemi.com applications. They are housed in the SC-70/SOT-323 which is designed for low power surface mount applications. COLLECTOR 3 Features S and NSV Prefix for Automotive and Other Applications Requiring 1 Unique Site and Control Change Requirement

9.32. Size:55K onsemi
bc858cdxv6t1g.pdf pdf_icon

BC858CDXV6T1, BC858CDXV6T5 Dual General Purpose Transistor PNP Dual http //onsemi.com This transistor is designed for general purpose amplifier applications. It is housed in the SOT-563 which is designed for low (3) (2) (1) power surface mount applications. Features Q1 Q2 These are Pb-Free Devices MAXIMUM RATINGS (4) (5) (6) Rating Symbol Value Unit Collector -Emitter Voltag

9.33. Size:209K onsemi
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BC856ALT1G Series General Purpose Transistors PNP Silicon Features www.onsemi.com S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 COLLECTOR Qualified and PPAP Capable 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) 2

9.34. Size:143K onsemi
bc856bwt1 bc857bwt1 bc858awt1-series.pdf pdf_icon

BC856BWT1 Series, BC857BWT1 Series, BC858AWT1 Series General Purpose Transistors http //onsemi.com PNP Silicon COLLECTOR 3 These transistors are designed for general purpose amplifier applications. They are housed in the SC--70/SOT--323 which is designed for low power surface mount applications. 1 BASE Features These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS 2

9.35. Size:78K onsemi
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BC856B, BC857B, BC858A General Purpose Transistors PNP Silicon These transistors are designed for general purpose amplifier www.onsemi.com applications. They are housed in the SC-70/SOT-323 which is designed for low power surface mount applications. COLLECTOR 3 Features S and NSV Prefix for Automotive and Other Applications Requiring 1 Unique Site and Control Change Requirement

9.36. Size:86K onsemi
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BC856ALT1G Series General Purpose Transistors PNP Silicon Features http //onsemi.com S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 COLLECTOR Qualified and PPAP Capable 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE 2 EMITTER MAXIMUM RATINGS (TA = 25 C unless other

9.37. Size:215K onsemi
bc856amtf bc856bmtf bc856cmtf bc857amtf bc857bmtf bc857cmtf bc858amtf bc858bmtf bc858cmtf bc859amtf bc859bmtf bc859cmtf bc860amtf bc860bmtf bc860cmtf.pdf pdf_icon

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

9.38. Size:81K onsemi
bc858bwt1g.pdf pdf_icon

BC856B, BC857B, BC858A General Purpose Transistors PNP Silicon These transistors are designed for general purpose amplifier www.onsemi.com applications. They are housed in the SC-70/SOT-323 which is designed for low power surface mount applications. COLLECTOR 3 Features S and NSV Prefix for Automotive and Other Applications Requiring 1 Unique Site and Control Change Requirement

9.39. Size:172K onsemi
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BC856BDW1T1G, BC857BDW1T1G Series, BC858CDW1T1G Series Preferred Devices Dual General Purpose Transistors http //onsemi.com PNP Duals (3) (2) (1) These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is designed for low power surface mount applications. Q1 Q2 Features These Devices are Pb-Free, Halogen Free/BFR Fr

9.40. Size:56K onsemi
bc858cdxv6t1-5.pdf pdf_icon

BC858CDXV6T1, BC858CDXV6T5 Dual General Purpose Transistor PNP Dual http //onsemi.com This transistor is designed for general purpose amplifier applications. It is housed in the SOT-563 which is designed for low (3) (2) (1) power surface mount applications. Features Q1 Q2 These are Pb-Free Devices MAXIMUM RATINGS (4) (5) (6) Rating Symbol Value Unit Collector -Emitter Voltag

9.41. Size:156K onsemi
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BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G, SBC857BDW1T1G Series, BC858CDW1T1G Series www.onsemi.com Dual General Purpose Transistors PNP Duals SOT-363/SC-88 These transistors are designed for general purpose amplifier CASE 419B STYLE 1 applications. They are housed in the SOT-363/SC-88 which is designed for low power surface mount applications. (3) (2) (1) Features S

9.42. Size:801K onsemi
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BC856ALT1G Series, SBC856ALT1G Series General Purpose Transistors PNP Silicon http //onsemi.com Features S and NSV Prefix for Automotive and Other Applications Requiring COLLECTOR Unique Site and Control Change Requirements; AEC-Q101 3 Qualified and PPAP Capable 1 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS BASE Compliant 2 EMITTER 3 MAXIMUM RATINGS

9.43. Size:269K auk
bc858.pdf pdf_icon

BC858 PNP Silicon Transistor Descriptions PIN Connection General purpose application Switching application C Features B High voltage VCEO=-30V E Complementary pair with BC848 SOT-23 Ordering Information Type NO. Marking Package Code VA BC858 SOT-23 Device Code hFE Rank Year&Week Code Absolute maximum rati

9.44. Size:279K auk
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BC858F PNP Silicon Transistor Descriptions PIN Connection General purpose application Switching application 3 Features 1 High voltage VCEO=-30V Complementary pair with BC848F 2 SOT-23F Ordering Information Type NO. Marking Package Code VA BC858F SOT-23F Device Code hFE Rank Year&Week Code Absolute maximum

9.45. Size:77K rectron
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BC856 BC857 BC858 PNP Silicon Planar Epitaxial Transistors Pin configuration 1. BASE 2. EMITTER 3. COLLECTOR 3 1 2 Unit inch (mm) Absolute Maximum Ratings (Ta = 25 oC unless specified otherwise) SYMBOL BC856 BC857 BC858 UNITS DESCRIPTION VCBO Collector Base Voltage 80 50 30 V Collector Emmitter Voltage (+VBE = 1V) VCEX 80 50 30 V VCEO Collector Emitter Voltage 65 45 30

9.46. Size:258K secos
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BC856A, B BC857A, B, C Elektronische Bauelemente BC858A, B, C A suffix of "-C" specifies halogen & lead-free FEATURES SOT-23 n A General Purpose Transistor PNP Type Dim Min Max L n Collect current - 0.1A A 2.800 3.040 O O n Operating Temp. -55 C +150 C 3 B 1.200 1.400 S Top View B n RoHS compliant product C 0.890 1.110 1 2 D 0.370 0.500 V G G 1.780 2.040 COLLE

9.47. Size:444K secos
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BC856AW, BW BC857AW, BW, CW Elektronische Bauelemente BC858AW, BW, CW RoHS Compliant Product FEATURES * Ideally suited for automatic insertion * For Switching and AF Amplifier Applications SOT-323 O O * Operating Temp. -55 C +150 C Dim Min Max A A 1.800 2.200 L B 1.150 1.350 C OLLE C TOR 3 C 0.800 1.000 S Top View 3 B 12 D 0.300 0.400 G 1.200 1.400 1 V G H 0.000 0.

9.48. Size:352K taiwansemi
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BC856A SERIES Taiwan Semiconductor Small Signal Product 200mW, PNP Small Signal Transistor FEATURES - Epitaxial planar die construction - Surface device type mounting - Moisture sensitivity level 1 - Matte Tin(Sn) lead finish with Nickel(Ni) underplate - Pb free and RoHS compliant - Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code MECHANICA

9.49. Size:371K cdil
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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC856W , 857W, 858W SOT-323 Formed SMD Package Marking BC856W =3D BC857AW =3E BC856AW =3A BC857BW =3F BC856BW =3B BC857CW =3G BC857W =3H BC858W =3M General Purpose Switching and Amplification. ABSOLUTE MAXIMUM RATINGS (Ta=25 C unless specified otherwise

9.50. Size:79K cdil
bc856 bc857 bc858.pdf pdf_icon

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC856 BC857 BC858 SILICON PLANAR EPITAXIAL TRANSISTORS P N P transistors Marking PACKAGE OUTLINE DETAILS BC856 = 3D ALL DIMENSIONS IN mm BC856A = 3A BC856B = 3B BC857 = 3H BC857A = 3E BC857B = 3F BC857C = 3G BC858 = 3M BC858A = 3J BC858B = 3K BC858C = 3L Pi

9.51. Size:149K jiangsu
bc856w bc857w bc858w.pdf pdf_icon

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-323 Plastic-Encapsulate Transistors BC856W TRANSISTOR (PNP) BC857W SOT-323 BC858W 1. BASE FEATURES 2. EMITTER Ideally suited for automatic insertion 3. COLLECTOR For Switching and AF Amplifier Applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit Collector-Base Volta

9.52. Size:976K jiangsu
bc856 bc857 bc858.pdf pdf_icon

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD J C T SOT-23 Plastic-Encapsulate Transistors BC856 TRANSISTOR (PNP) BC857 SOT-23 BC858 FEATURES 1. BASE 2. EMITTER Ideally suited for automatic insertion 3. COLLECTOR For Switching and AF Amplifier Applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit Collector-Base Volta

9.53. Size:729K jiangsu
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www.jscj-elec.com AD-BC856/57/58 series JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. AD-BC856/57/58 Series Plastic-Encapsulated Transistor AD-BC856/57/58 series Transistor (PNP) FEATURES Ideally suited for automatic insertion For switching and AF amplifier applications AEC-Q101 qualified MARKING AD-BC856-A = 3A; AD-BC856-B = 3B AD-BC857-A = 3E; AD-BC8

9.54. Size:445K jiangsu
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors BC856A, B TRANSISTOR (PNP) BC857A, B,C SOT-23 BC858A, B,C FEATURES 1. BASE 2. EMITTER Ideally suited for automatic insertion 3. COLLECTOR For Switching and AF Amplifier Applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Colle

9.55. Size:34K kec
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SEMICONDUCTOR BC856W/7W/8W TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . E M B M DIM MILLIMETERS FEATURES _ A + 2.00 0.20 D 2 For Complementary With NPN Type BC846W/847W/848W. _ + B 1.25 0.15 _ + C 0.90 0.10 3 1 D 0.3+0.10/-0.05 _ E + 2.10 0.20 G 0.65 H 0.15+0.1/-0.06 J 1.30 MAXIMUM RATING (Ta=25 ) K 0.00-0.

9.56. Size:394K kec
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SEMICONDUCTOR BC856/7/8 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . E L B L DIM MILLIMETERS FEATURES _ + 2.93 0.20 A B 1.30+0.20/-0.15 For Complementary With NPN Type BC846/847/848. C 1.30 MAX 2 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 K 0.00 0.10 MAXIMUM RATING (Ta=25 ) L 0.55 P P

9.57. Size:1334K htsemi
bc856 bc857 bc858.pdf pdf_icon

BC856A,B BC857A, B,C BC858A, B,C TRANSISTOR (PNP) FEATURES Ideally suited for automatic insertion For Switching and AF Amplifier Applications SOT-23 1. BASE MAXIMUM RATINGS (TA=25 unless otherwise noted) 2. EMITTER 3. COLLECTOR Symbol Parameter Value Units VCBO Collector-Base Voltage BC856 -80 V BC857 -50 BC858 -30 VCEO Collector-Emitter Voltage B

9.58. Size:674K htsemi
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BC856A,B BC857A, B,C BC858A, B,C TRANSISTOR (PNP) FEATURES Ideally suited for automatic insertion For Switching and AF Amplifier Applications SOT-23 1. BASE MAXIMUM RATINGS (TA=25 unless otherwise noted) 2. EMITTER 3. COLLECTOR Symbol Parameter Value Units VCBO Collector-Base Voltage BC856 -80 V BC857 -50 BC858 -30 VCEO Collector-Emitter Voltage B

9.59. Size:300K gsme
bc858.pdf pdf_icon

Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM856,857,858( BC856,857,858) MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS Characteristic Symbol GM856A,B GM857A,B,C GM

9.60. Size:283K lge
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BC856A,B BC857A,B,C BC858A,B,C SOT-23 Transistor(PNP) 1. BASE 2. EMITTER 3. COLLECTOR SOT-23 Features Ideally suited for automatic insertion For Switching and AF Amplifier Applications MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage BC856 -80 V BC857 -50 BC858 -30 Dimensions in inches and (millimeters

9.61. Size:2038K lge
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BC856/857/858 PNP general purpose Transistor A SOT-23 FEATURES Dim Min Max Low current.(max.100mA). A 2.70 3.10 E B 1.10 1.50 Low voltage.. K B C 1.0 Typical APPLICATIONS D 0.4 Typical E 0.35 0.48 General purpose switching and amplification. G 1.80 2.00 J D H 0.02 0.1 G J 0.1 Typical ORDERING INFORMATION K 2.20 2.60 H Type No. Marking Package Code C All Dim

9.62. Size:279K lge
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BC856AW,BW BC857AW,BW,CW BC858AW,BW,CW STO-323 Transistor(PNP) 1. BASE 2. EMITTER SOT-323 3. COLLECTOR Features Ideally suited for automatic insertion For Switching and AF Amplifier Applications MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units Collector-Base Voltage BC856W -80 VCBO V BC857W -50 Dimensions in inches and (millimeters)

9.63. Size:546K wietron
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BC856AW/BW BC857AW/BW BC858AW/BW/CW COLLECTOR General Purpose Transistor 3 3 PNP Silicon 1 1 P b Lead(Pb)-Free BASE 2 2 EMITTER SOT-323(SC-70) MaximumRatings (TA=25 Cunless otherwise noted) Rating Symbol Value Unit Collector-Emitter Voltage BC856 -65 VCEO BC857 -45 V BC858 -30 Collector-Base Voltage BC856 -80 VCBO BC857 -50 V BC858 -30 Emitter-Base Voltage BC856 -5.0

9.64. Size:1005K wietron
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BC856BDW Series PNP Dual General Purpose Transistors 2 1 3 P b Lead(Pb)-Free 6 5 4 1 2 3 4 5 6 PNP+PNP SOT-363(SC-88) Maximum Ratings Rating Symbol BC856 BC857 BC858 Unit 65 45 30 Collector-Emitter Voltage VCEO V 80 50 30 Collector-Base Voltage VCBO V 5.0 5.0 5.0 Emitter-Base Voltage VEBO V Collector Current-Continuous IC 100 100 100 mA Thermal Characteristics Chara

9.65. Size:438K wietron
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BC856A/B-BC857A/B/C BC858A/B/C-BC859B/C COLLECTOR 3 General Purpose Transistor MARKING DIAGRAM 3 3 PNP Silicon 1 1 2 BASE XX = Device SOT-23 Code (See 1 2 Table Below) 2 EMITTER ( T =25 C unless otherwise noted) Maximum Ratings A Rating Symbol Value Unit Collector-Emitter Voltage V -65 BC856 CEO V BC857 -45 BC858,BC859 -30 Collector-Base Voltage BC856 -80 V BC857

9.66. Size:244K shenzhen
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Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors BC856A,B TRANSISTOR (PNP) BC857A, B,C SOT-23 BC858A, B,C FEATURES 1. BASE 2. EMITTER Ideally suited for automatic insertion 3. COLLECTOR For Switching and AF Amplifier Applications MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Colle

9.67. Size:560K can-sheng
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ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors BC856A,B TRANSISTOR (PNP) BC857A, B,C SOT-23 BC858A, B,C FEATURES Ideally suited for automatic insertion 1 BASE For Switching and AF Amplifier Applications 2 EMTTER 3 COLLECTOR MAXIMUM RATINGS (TA=25 unless

9.68. Size:173K semtech
bc856 bc857 bc858 bc859 bc860.pdf pdf_icon

BC856 BC860 PNP Silicon Epitaxial Transistor for switching and amplifier applications TO-236 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage BC856 -VCBO 80 V BC857, BC860 -VCBO 50 V BC858, BC859 -VCBO 30 V Collector Emitter Voltage BC856 -VCEO 65 V BC857, BC860 -VCEO 45 V BC858, BC859 -VCEO 30 V Emitter Base Volt

9.69. Size:253K semtech
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BC856LT1 BC858LT1 PNP Silicon General Purpose Transistors for switching and amplifier applications. As complementary types the NPN transistors BC846ALT1...BC850CLT1 are recommended. SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 oC) Symbol BC856 BC857 BC858 Unit Collector Base Voltage -VCBO 80 50 30 V Collector Emitter Voltage -VCEO 65 45 30 V Emitter Base Voltage -

9.70. Size:159K lrc
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LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC857CLT1G PNP Silicon Series S-LBC857CLT1G Moisture Sensitivity Level 1 Series ESD Rating Human Body Model >4000 V ESD Rating Machine Model >400 V We declare that the material of product compliance with 3 RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site a

9.71. Size:158K lrc
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LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC857CLT1G PNP Silicon Series S-LBC857CLT1G Moisture Sensitivity Level 1 Series ESD Rating Human Body Model >4000 V ESD Rating Machine Model >400 V We declare that the material of product compliance with 3 RoHS requirements. S- Prefix for Automotive and Other Applications Requiring 1 Unique Sit

9.72. Size:178K lrc
lbc858cdw1t1g.pdf pdf_icon

LESHAN RADIO COMPANY, LTD. Dual General Purpose LBC85** DW1T1G Transistors S-LBC85** DW1T1G These transistors are designed for general purpose amplifier applications. They are housed in the SOT 363/SC 88 which is 6 5 designed for low power surface mount applications. 4 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other A

9.73. Size:276K lrc
lbc858cwt1g.pdf pdf_icon

LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC856AWT1G, BWT1G LBC857AWT1G, BWT1G PNP Silicon These transistors are designed for general purpose CWT1G amplifier applications. They are housed in the SOT 323/ LBC858AWT1G, BWT1G SC 70 which is designed for low power surface mount applications. CWT1G Features S-LBC856AWT1G, BWT1G We declare that the material of product c

9.74. Size:234K lrc
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LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon Moisture Sensitivity Level 1 ESD Rating Human Body Model >4000 V LBC857CLT1G ESD Rating Machine Model >400 V S-LBC857CLT1G We declare that the material of product compliance with Series RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Ch

9.75. Size:158K lrc
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LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC857CLT1G PNP Silicon Series S-LBC857CLT1G Moisture Sensitivity Level 1 Series ESD Rating Human Body Model >4000 V ESD Rating Machine Model >400 V We declare that the material of product compliance with 3 RoHS requirements. S- Prefix for Automotive and Other Applications Requiring 1 Unique Sit

9.76. Size:176K lrc
lbc858bdw1t1g.pdf pdf_icon

LESHAN RADIO COMPANY, LTD. Dual General Purpose LBC85** DW1T1G Transistors S-LBC85** DW1T1G These transistors are designed for general purpose amplifier applications. They are housed in the SOT 363/SC 88 which is designed for low power surface mount applications. 6 5 4 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other A

9.77. Size:278K lrc
lbc858bwt1g.pdf pdf_icon

LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC856AWT1G, BWT1G LBC857AWT1G, BWT1G PNP Silicon These transistors are designed for general purpose CWT1G amplifier applications. They are housed in the SOT 323/ LBC858AWT1G, BWT1G SC 70 which is designed for low power surface mount CWT1G applications. Features S-LBC856AWT1G, BWT1G We declare that the material of product c

9.78. Size:158K lrc
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LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC857CLT1G PNP Silicon Series S-LBC857CLT1G Moisture Sensitivity Level 1 Series ESD Rating Human Body Model >4000 V ESD Rating Machine Model >400 V We declare that the material of product compliance with 3 RoHS requirements. S- Prefix for Automotive and Other Applications Requiring 1 Unique Sit

9.79. Size:182K lrc
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LESHAN RADIO COMPANY, LTD. Dual General Purpose LBC85** DW1T1G Transistors S-LBC85** DW1T1G These transistors are designed for general purpose amplifier applications. They are housed in the SOT 363/SC 88 which is designed for low power surface mount applications. 6 5 4 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other A

9.80. Size:254K lrc
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LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC856AWT1G, BWT1G LBC857AWT1G, BWT1G PNP Silicon These transistors are designed for general purpose CWT1G amplifier applications. They are housed in the SOT 323/ LBC858AWT1G, BWT1G SC 70 which is designed for low power surface mount CWT1G applications. S-LBC856AWT1G, BWT1G Features We declare that the material of product

9.81. Size:194K lrc
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LESHAN RADIO COMPANY, LTD. Dual General Purpose LBC85** DW1T1G Transistors S-LBC85** DW1T1G 6 5 These transistors are designed for general purpose amplifier 4 applications. They are housed in the SOT 363/SC 88 which is designed for low power surface mount applications. 1 We declare that the material of product compliance with RoHS requirements. 2 3 S- Prefix for Automotive an

9.82. Size:158K lrc
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LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC857CLT1G Series PNP Silicon S-LBC857CLT1G Moisture Sensitivity Level 1 Series ESD Rating Human Body Model >4000 V ESD Rating Machine Model >400 V We declare that the material of product compliance with RoHS requirements. 3 S- Prefix for Automotive and Other Applications Requiring Unique Site an

9.83. Size:234K lrc
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LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon Moisture Sensitivity Level 1 ESD Rating Human Body Model >4000 V LBC857CLT1G ESD Rating Machine Model >400 V S-LBC857CLT1G We declare that the material of product compliance with Series RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Ch

9.84. Size:490K first silicon
bc858s.pdf pdf_icon

SEMICONDUCTOR BC856 / 857 / 858 / 859S TECHNICAL DATA General Purpose Transistors PNP Silicon Moisture Sensitivity Level 1 ESD Rating Human Body Model >4000 V ESD Rating Machine Model >400 V We declare that the material of product compliance with 3 RoHS requirements. 2 MAXIMUM RATINGS (TA = 25 C unless otherwise noted) 1 Rating Symbol Value Unit SOT 23

9.85. Size:1157K kexin
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SMD Type Transistors PNP Transistors BC856W,BC857W,BC858W (KC856W,KC857W,KC858W) Features Ideally suited for automatic insertion For Switching and AF Amplifier Applications 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit BC856W -80 Collector - Base Voltage BC857W VCBO -50 BC858W -30 BC856W -65 V Collector - Emitte

9.86. Size:1596K kexin
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SMD Type Transistors PNP Transistors BC856 BC858 (KC856 KC858) SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Ideally suited for automatic insertion For Switching and AF Amplifier Applications 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol BC856 BC857 BC858 Unit C

9.87. Size:143K panjit
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BC856AW BC859CW PNP GENERAL PURPOSE TRANSISTORS 30/45/65 Volts POWER 250 mWatts VOLTAGE FEATURES General purpose amplifier applications PNP epitaxial silicon, planar design Collector current IC = 100mA Complimentary (NPN) Devices BC846AW/BC847AW/BC848AW/ BC849BW Series Lead free in comply with EU RoHS 2011/65/EU directives Green molding compound as per IEC

9.88. Size:176K panjit
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BC856 SERIES PNP GENERAL PURPOSE TRANSISTORS POWER 330 mWatt VOLTAGE 30/45/65 Volt FEATURES 0.120(3.04) General Purpose Amplifier Applications 0.110(2.80) Collector Current IC = -100mA Complimentary (PNP) Devices BC846/BC847/BC848/BC849 Series Lead free in compliance with EU RoHS 2011/65/EU directive 0.056(1.40) 0.047(1.20) Green molding compound as per IEC61

9.89. Size:140K comchip
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Small Signal Transistor BC856AW-G Thru. BC858CW-G (PNP) RoHS Device Features -Ideally suited for automatic insertion -For Switching and AF Amplifier Applications SOT-323 -Power dissipation PCM 0.15W (@TA=25 C) 0.087 (2.20) 0.079 (2.00) -Collector current 3 ICM -0.1A -Collector-base voltage 0.053(1.35) 0.045(1.15) VCBO BC856W= -80V BC857W= -50V 1 2 0.006 (0.15) BC85

9.90. Size:140K comchip
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Small Signal Transistor BC856AW-G Thru. BC858CW-G (PNP) RoHS Device Features -Ideally suited for automatic insertion -For Switching and AF Amplifier Applications SOT-323 -Power dissipation PCM 0.15W (@TA=25 C) 0.087 (2.20) 0.079 (2.00) -Collector current 3 ICM -0.1A -Collector-base voltage 0.053(1.35) 0.045(1.15) VCBO BC856W= -80V BC857W= -50V 1 2 0.006 (0.15) BC85

9.91. Size:140K comchip
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Small Signal Transistor BC856AW-G Thru. BC858CW-G (PNP) RoHS Device Features -Ideally suited for automatic insertion -For Switching and AF Amplifier Applications SOT-323 -Power dissipation PCM 0.15W (@TA=25 C) 0.087 (2.20) 0.079 (2.00) -Collector current 3 ICM -0.1A -Collector-base voltage 0.053(1.35) 0.045(1.15) VCBO BC856W= -80V BC857W= -50V 1 2 0.006 (0.15) BC85

9.92. Size:685K slkor
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BC856W-BC858W Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES SOT-323 Ideally suited for automatic insertion For Switching and AF Amplifier Applications 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER 3. COLLECTOR Symbol Parameter Value Unit Collector-Base Voltage BC856W -80 VCBO V BC857W -50 BC858W -30 Collector-Emitter Voltage

9.93. Size:1882K slkor
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BC856-BC858 TRANSISTOR PNP SOT-23 FEATURES Ideally suited for automatic insertion For Switching and AF Amplifier Applications 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit Collector-Base Voltage BC856 -80 VCBO V BC857 -50 BC858 -30 Collector-Emitter Voltage BC856 -65 VCEO V BC857 -45 B

9.94. Size:688K slkor
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BC856W-BC858W Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES SOT-323 Ideally suited for automatic insertion For Switching and AF Amplifier Applications 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit Collector-Base Voltage BC856W -80 VCBO V BC857W -50 BC858W -30 Collector-Emitter Voltage BC8

9.95. Size:447K umw-ic
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R UMW UMW BC857 SOT-23 Plastic-Encapsulate Transistors BC856A, B TRANSISTOR (PNP) BC857A, B,C SOT-23 BC858A, B,C FEATURES 1. BASE 2. EMITTER Ideally suited for automatic insertion 3. COLLECTOR For Switching and AF Amplifier Applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage BC856 -80 V B

9.96. Size:781K anbon
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BC856A/B-BC857A/B/C BC858A/B/C-BC859B/C General Purpose Transistor PNP Silicon Package outline Features Moisture sensitivity level 1 SOT-23 ESD rating human body model >4000 V,machine model >400 V Epitaxial plana chip construction Ideal for medium power application and switching Capable of 225mW power dissipation. Lead-free parts for green partner, ex

9.97. Size:2269K high diode
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BC856-8 SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( P NP ) Features SOT- 23 Ideally suited for automatic insertion For Switching and AF Amplifier Applications Marking BC856A=3A;BC856B=3B; BC857A=3E;BC857B=3F;BC857C=3G; BC858A=3J;BC858B=3K;BC858C=3L; C B E Item Symbol Unit Conditions Value BC856 Collector-Base Voltage -80 -50 BC857 V VC

9.98. Size:6174K msksemi
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www.msksemi.com BC856/57/58ABC Semiconductor Compiance Semiconductor Compiance TRANSISTOR (PNP) 1. BASE 2. EMITTER FEATURES 3. COLLECTOR Ideally suited for automatic insertion SOT-23 For Switching and AF Amplifier Applications DEVICE MARKING P/N MARK P/N MARK P/N MARK BC856A 3A BC856B 3B BC857A 3E BC857B 3F BC857C 3G BC858A 3J BC858B 3K BC858C 3L MAXIMUM RATINGS (T

9.99. Size:254K powersilicon
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DATA SHEET BC856A/B,BC857A/B/C,BC858A/B/C PNP GENERAL PURPOSE TRANSISTOR VOLTAGE -30 -65 V CURRENT -100 mA FEATURES PNP SILICON EPITAXIAL PLANAR TRANSISTOR FOR SWITCHING AND AMPLIFIER APPLICATIONS COLLECTOR CURRENT IC = -100mA LEAD FREE AND HALOGEN-FREE MECHANICAL DATA CASE SOT-23 TERMINALS SOLDERABLE PER MIL-STD-202G, METHOD 208 APPROX. WEIGHT 0.008

9.100. Size:954K cn salltech
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9.101. Size:135K cn shandong jingdao microelectronics
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Jingdao Microelectronics co.LTD BC856 BC857 BC858 BC856 BC857 BC858 SOT-23 PNP TRANSISTOR 3 FEATURES Ideally suited for automatic insertion For Switching and AF Amplifier Applications 1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Parameter Symbol Value Unit 2 BC856 -80 1.BASE Collector Base Voltage V BC8

9.102. Size:639K cn shikues
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9.103. Size:2188K cn yongyutai
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BC856/BC857/BC858 TRANSI STOR (PNP) MARKING Equivalent Circuit SOT-23 1.BASE 2.EMITTER 3.COLLECTOR FEATURES Ideaiiy suited for automatic insertion For switching and AF amplifier applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage -80 BC856 VCBO -50 V BC857 -30 BC858 Collector-Emitter Voltage -6

9.104. Size:550K cn zre
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BC856/BC857/BC858 TRANSISTOR(PNP) SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features Complementary to BC846/BC847/BC848 Power Dissipation of 200mW Ideally suited for automatic insertion For switching and AF amplifier applications Marking Mechanical Data BC856A=3A BC856B=3B Small Outline Plastic Package BC857A=

9.105. Size:3051K cn twgmc
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BC856 THRU BC860 BC856 THRU BC860 BC856 THRU BC860 BC8 56 THRU BC8 60 TRANSISTOR(PNP) FEATURES Switching and Amplifier Applications SOT-23 Suitable for automatic insertion in thick and thin-film circuits 1 BASE Low Noise BC859, BC860 2 EMITTER 3 COLLECTOR Complement to BC846 ... BC850 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Collec

9.106. Size:748K cn twgmc
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BC856-BC860 BC856 BC860 PNP Silicon Epitaxial Transistor for switching and amplifier applications 1.BASE 2.EMITTER 3.COLLECTOR SOT-23 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage BC856 -VCBO 80 V BC857, BC860 -VCBO 50 V BC858, BC859 -VCBO 30 V Collector Emitter Voltage BC856 -VCEO 65 V BC857, BC860 -VCEO 45 V B

9.107. Size:276K cn yangzhou yangjie elec
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RoHS RoHS COMPLIANT COMPLIANT BC856AW THRU BC858CW PNP Transistor Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 High Conductance Surface Mount Package Ideally Suited for Automatic Insertion Mechanical Data Package SOT-323 Molding compound meets UL 94 V-

9.108. Size:253K cn yangzhou yangjie elec
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RoHS RoHS COMPLIANT COMPLIANT BC856AWQ THRU BC858CWQ PNP General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating and halogen free Moisture Sensitivity Level 1 Part no. with suffix Q means AEC-Q101 qualified Applications PNP General purpose switching and amplification Mechanical Data Case SOT-323 Terminals Tin plated

9.109. Size:299K cn yangzhou yangjie elec
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RoHS RoHS COMPLIANT COMPLIANT BC856/BC857/BC858 PNP Transistor Features Epoxy meets UL-94 V-0 flammability rating Moisture Sensitivity Level 1 High Conductance Surface Mount Package Ideally Suited for Automatic Insertion Mechanical Data Package SOT-23 Molding compound meets UL 94 V-0 flammability rating, RoHS-compliant, halogen-free Terminals T

9.110. Size:283K cn yangzhou yangjie elec
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RoHS RoHS COMPLIANT COMPLIANT BC856AW THRU BC858CW PNP Transistor Features Epoxy meets UL-94 V-0 flammability rating Moisture Sensitivity Level 1 High Conductance Surface Mount Package Ideally Suited for Automatic Insertion Mechanical Data Package SOT-323 Molding compound meets UL 94 V-0 flammability rating, RoHS-compliant, halogen-free Termina

9.111. Size:270K cn yangzhou yangjie elec
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RoHS COMPLIANT BC856Q THRU BC858Q PNP General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating and halogen free Moisture Sensitivity Level 1 High Conductance Part no. with suffix Q means AEC-Q101 qualified Applications General purpose switching and amplification Mechanical Data SOT-23 Case Terminals Tin plated

9.112. Size:1082K cn dowo
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BC856-BC858 BC856A, B TRANSISTOR (PNP) BC857A, B,C SOT-23 BC858A, B,C FEATURES 1. BASE 2. EMITTER Ideally suited for automatic insertion 3. COLLECTOR For Switching and AF Amplifier Applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage BC856 -80 V BC857 -50 BC858 -30 VCEO Collector-Emitter Voltage B

9.113. Size:629K cn doeshare
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BC856/BC857/BC858 BC856/BC857/BC858 SOT-23 Plastic-Encapsulate Transistors (PNP) General description SOT-23 Plastic-Encapsulate Transistors (PNP) FEATURES Complementary to BC846/BC847/BC848 Power Dissipation of 200mW Ideally suited for automatic insertion For switching and AF amplifier applications SOT-23 Small Outline Plastic Package DEVICE MARKING COD

9.114. Size:1243K cn cbi
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Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES SOT-323 Ideally suited for automatic insertion For Switching and AF Amplifier Applications 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER 3. COLLECTOR Symbol Parameter Value Unit Collector-Base Voltage BC856W -80 VCBO V BC857W -50 BC858W -30 Collector-Emitter Voltage BC856W -65

9.115. Size:409K cn cbi
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BC856 BC860 PNP Silicon Epitaxial Transistor for switching and amplifier applications 1.BASE 2.EMITTER 3.COLLECTOR SOT-23 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage BC856 -VCBO 80 V BC857, BC860 -VCBO 50 V BC858, BC859 -VCBO 30 V Collector Emitter Voltage BC856 -VCEO 65 V BC857, BC860 -VCEO 45 V BC858, BC859 -

9.116. Size:327K cn fosan
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ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD BC856/BC857/BC858 FEATURES PNP General Purpose Transistor MAXIMUM RATINGS Characteristic Symbol GM856A,B GM857A,B,C GM858A,B,C Unit (BC856A,B) (BC857A,B,C) (BC858A,B,C) Collector-Emitter Voltage V -65 -45 -30 Vdc CEO C

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Plastic-Encapsulate Transistors (PNP) FEATURES BC856A/B (PNP) BC857A/B/C Ideally suited for automatic insertion BC858A/B/C (PNP) For Switching and AF Amplifier Applications Marking BC856A BC856B BC857A BC857B 3A 3B 3E 3F BC857C BC858A BC858B BC858C 1. BASE 3G 3J 3K 3L 2. EMITTER SOT-23 3. COLLECTO MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value Unit BC8

9.118. Size:637K cn hottech
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BC858 BIPOLAR TRANSISTOR (PNP) FEATURES Complementary to BC848 Ideally suited for automatic insertion For switching and AF amplifier applications Surface Mount device SOT-23 MECHANICAL DATA Case SOT-23 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.008 grams (approximate) MAXIMUM RATINGS (T = 25 C unless othe

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