2N6376 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Order this documentMOTOROLAby 2N6379/DSEMICONDUCTOR TECHNICAL DATA2N6379*High-Power PNP Silicon*Motorola Preferred DeviceTransistors50 AMPEREPOWER TRANSISTORS. . . designed for use in industrialmilitary power amplifier and switching circuitPNP SILICONapplications.80, 100, 120 VOLTS High Collector Emitter Sustaining Voltage 250 WATTSVCEO(sus) = 120 Vdc (M

TMCentralSemiconductor Corp.145 Adams AvenueHauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824www.centralsemi.com

2N6253 - 2N6254 - 2N6371HIGH POWER SILICON NPN TRANSISTORSThe 2N6253, 2N6254, and 2N6371 are silicon NPN transistors intended for a widevariety of high-power applications. The construction of these devices renders themhighly resistant to second breakdown over a wide range of operating conditions.These devices differ in maximum ratings for voltage and power dissipation. All aresuppli

JMnic Product Specification Silicon NPN Power Transistors 2N6371 DESCRIPTION With TO-3 package Low collector saturation voltage High dissipation capability Excellent safe operating area APPLICATIONS Series and shunt regulators High-fidelity amplifiers Power-switching circuits PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and s

JMnic Product Specification Silicon NPN Power Transistors 2N6372 2N6373 2N6374 DESCRIPTION With TO-66 package Low collector saturation voltage Excellent safe operating area APPLICATIONS Designed for switching and wide-band amplifier applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-66) and symbol 3 CollectorAbsolute maximum ra

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6371 DESCRIPTION With TO-3 package Low collector saturation voltage High dissipation capability Excellent safe operating area APPLICATIONS Series and shunt regulators High-fidelity amplifiers Power-switching circuits PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified out

isc Silicon PNP Power Transistor 2N6378DESCRIPTIONCollector-Emitter Breakdown Voltage-: V =-100V(Min)CEOMinimum Lot-to-Lot variations for robust devicePerformance and reliable operationAPPLICATIONSPower amplifier and switching applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)UNISYMBOL PARAMETER VALUETV Collector-Base Voltage -120 VCBOV Collector-Emitter Voltage

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6372 2N6373 2N6374 DESCRIPTION With TO-66 package Low collector saturation voltage Excellent safe operating area APPLICATIONS Designed for switching and wide-band amplifier applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-66) and symbol 3 CollectorAb

isc Silicon PNP Power Transistor 2N6377DESCRIPTIONCollector-Emitter Breakdown Voltage-: V =-80V(Min)CEOMinimum Lot-to-Lot variations for robust devicePerformance and reliable operationAPPLICATIONSPower amplifier and switching applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)UNISYMBOL PARAMETER VALUETV Collector-Base Voltage -100 VCBOV Collector-Emitter Voltage -