2N6376 Todos los transistores

Order this document MOTOROLA by 2N6379/D SEMICONDUCTOR TECHNICAL DATA 2N6379* High-Power PNP Silicon *Motorola Preferred Device Transistors 50 AMPERE POWER TRANSISTORS . . . designed for use in industrial military power amplifier and switching circuit PNP SILICON applications. 80, 100, 120 VOLTS High Collector Emitter Sustaining Voltage 250 WATTS VCEO(sus) = 120 Vdc (M

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2N6253 - 2N6254 - 2N6371 HIGH POWER SILICON NPN TRANSISTORS The 2N6253, 2N6254, and 2N6371 are silicon NPN transistors intended for a wide variety of high-power applications. The construction of these devices renders them highly resistant to second breakdown over a wide range of operating conditions. These devices differ in maximum ratings for voltage and power dissipation. All are suppli

JMnic Product Specification Silicon NPN Power Transistors 2N6371 DESCRIPTION With TO-3 package Low collector saturation voltage High dissipation capability Excellent safe operating area APPLICATIONS Series and shunt regulators High-fidelity amplifiers Power-switching circuits PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and s

JMnic Product Specification Silicon NPN Power Transistors 2N6372 2N6373 2N6374 DESCRIPTION With TO-66 package Low collector saturation voltage Excellent safe operating area APPLICATIONS Designed for switching and wide-band amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collector Absolute maximum ra

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6371 DESCRIPTION With TO-3 package Low collector saturation voltage High dissipation capability Excellent safe operating area APPLICATIONS Series and shunt regulators High-fidelity amplifiers Power-switching circuits PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified out

isc Silicon PNP Power Transistor 2N6378 DESCRIPTION Collector-Emitter Breakdown Voltage- V =-100V(Min) CEO Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) UNI SYMBOL PARAMETER VALUE T V Collector-Base Voltage -120 V CBO V Collector-Emitter Voltage

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6372 2N6373 2N6374 DESCRIPTION With TO-66 package Low collector saturation voltage Excellent safe operating area APPLICATIONS Designed for switching and wide-band amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collector Ab

isc Silicon PNP Power Transistor 2N6377 DESCRIPTION Collector-Emitter Breakdown Voltage- V =-80V(Min) CEO Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) UNI SYMBOL PARAMETER VALUE T V Collector-Base Voltage -100 V CBO V Collector-Emitter Voltage -