DN100 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DN100

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.625 W

Tensión colector-base (Vcb): 15 V

Tensión colector-emisor (Vce): 12 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 260 MHz

Capacitancia de salida (Cc): 5 pF

Ganancia de corriente contínua (hFE): 200

Encapsulados: TO-92

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DN100 datasheet

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 dn100.pdf pdf_icon

DN100

DN100 NPN Silicon Transistor Features PIN Connection Extremely low collector-to-emitter C saturation voltage ( VCE(SAT)= 0.15V Typ. @IC/IB=400mA/20mA) Suitable for low voltage large current drivers B Complementary pair with DP100 Switching Application E TO-92 Ordering Information Type NO. Marking Package Code DN100 DN100 TO-92 Absolute maxim

 0.1. Size:435K  rohm
 rdn100n20.pdf pdf_icon

DN100

RDN100N20 Transistors Switching (200V, 10A) RDN100N20 External dimensions (Unit mm) Features 1) Low on-resistance. TO-220FN +0.3 +0.3 4.5 -0.1 2) Low input capacitance. 10.0 -0.1 +0.2 2.8 3.2 0.2 -0.1 3) Exellent resistance to damage from static electricity. Application 1.2 Switching 1.3 0.8 (1) Gate 0.75+0.1 2.6 0.5 2.54 0.5 2.54 0.5 -0.05 Structure

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 dn100s.pdf pdf_icon

DN100

DN100S NPN Silicon Transistor Features PIN Connection Extremely low collector-to-emitter saturation voltage ( VCE(SAT)= 0.15V Typ. @IC/IB=400mA/20mA) 3 Suitable for low voltage large current drivers Complementary pair with DP100S 1 Switching Application 2 SOT-23F Ordering Information Type NO. Marking Package Code N03 DN100S SOT-23F

Otros transistores... BC858U, BC858UF, DN030, DN030E, DN030S, DN030U, DN050, DN050S, BD136, DN100S, DN200, DN200F, DN500, DN500F, DN500P, DP030, DP030E