STD1664 Todos los transistores

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 std1664.pdf

STD1664 NPN Silicon Transistor PIN Connection Description Medium power amplifier application Features PC(Collector power dissipation)=1W (Ceramic substate of 250 0.8t used) Low collector saturation voltage VCE(sat)=0.15V(Typ.) Complementary pair with STB1132 SOT-89 Ordering Information Type NO. Marking Package Code A2 STD1664 SOT-89

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 2std1665.pdf

2STD1665 Low voltage fast-switching NPN power transistor Features Very low collector to emitter saturation voltage TAB High current gain characteristic Fast-switching speed 3 Applications 1 Voltage regulators DPAK High efficiency low voltage switching applications Description Figure 1. Internal schematic diagram The device is a low voltage NPN transistor wit

 8.2. Size:215K  inchange semiconductor
 2std1665.pdf

isc Silicon NPN Power Transistor 2STD1665 DESCRIPTION Low collector saturation voltage High current gain characteristics Fast-switching speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Voltage regulators High efficiency low voltage switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER

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 std16ne06l-.pdf

STD16NE06L N - CHANNEL 60V - 0.07 - 16A - DPAK STripFET " POWER MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STD16NE06L 60 V

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 std16n50m2 stf16n50m2 stp16n50m2.pdf

STD16N50M2, STF16N50M2, STP16N50M2 N-channel 500 V, 0.24 typ.,13 A, MDmesh M2 Power MOSFETs in DPAK, TO-220FP and TO-220 packages Datasheet - preliminary data Features TAB 3 Order codes VDS @ TJmax RDS(on) max. ID 1 DPAK STD16N50M2 STF16N50M2 550 V 0.28 13 A STP16N50M2 TAB Extremely low gate charge Excellent output capacitance (Coss) profile 3 3 2 2 10

 9.3. Size:55K  st
 std16ne06l-1.pdf

STD16NE06L-1 N - CHANNEL 60V - 0.07 - 16A - TO-251 STripFET " POWER MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STD16NE06L-1 60 V

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 std16nf25 stf16nf25 stp16nf25.pdf

STD16NF25 STF16NF25 - STP16NF25 N-channel 250V - 0.195 - 13A - DPAK/TO-220/TO-220FP Low gate charge STripFET II Power MOSFET Features RDS(on) Type VDSS ID Pw Max 3 STD16NF25 250V

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 std16nf06t4.pdf

STD16NF06 N-Channel 60V - 0.060 - 16A - DPAK STripFET II Power MOSFET General features VDSS RDS(on) ID Type STD16NF06 60V

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 std16n60m2.pdf

STD16N60M2 N-channel 600 V, 0.280 typ., 12 A MDmesh M2 Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max. I DS DS(on) D STD16N60M2 600 V 0.320 12 A Extremely low gate charge Excellent output capacitance (COSS) profile 100% avalanche tested Zener-protected Figure 1 Internal schematic diagram Applications D(

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 std16ne10.pdf

STD16NE10 N - CHANNEL 100V - 0.07 - 16A - IPAK/DPAK STripFET MOSFET TYPE VDSS RDS(on) ID STD16NE10 100 V

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 std16n65m2.pdf

STD16N65M2 N-channel 650 V, 0.32 typ., 11 A MDmesh M2 Power MOSFET in a DPAK package Datasheet - production data Features Order code VDS @ TJmax RDS(on) max ID TAB STD16N65M2 710 V 0.36 11 A Extremely low gate charge 3 2 Excellent output capacitance (Coss) profile 1 100% avalanche tested Zener-protected DPAK Applications Switching applications Fig

 9.9. Size:356K  st
 std16nf06l-1.pdf

STD16NF06L STD16NF06L-1 N-channel 60V - 0.060 - 24A - DPAK/IPAK STripFET II Power MOSFET General features Type VDSS RDS(on) ID STD16NF06L-1 60V

 9.10. Size:696K  st
 std16nf06.pdf

STD16NF06 N-Channel 60V - 0.060 - 16A - DPAK STripFET II Power MOSFET General features VDSS RDS(on) ID Type STD16NF06 60V

 9.11. Size:844K  st
 std16n65m5.pdf

STD16N65M5 Datasheet N-channel 650 V, 0.230 typ., 12 A MDmesh M5 Power MOSFET in a DPAK package Features VDS at Tjmax. RDS(on) max. ID Order codes TAB STD16N65M5 710 V 0.279 12 A 3 2 1 Extremely low RDS(on) DPAK Low gate charge and input capacitance Excellent switching performance D(2, TAB) 100% avalanche tested Applications Switching applications

 9.12. Size:350K  st
 std16nf06l-1 std16nf06lt4.pdf

STD16NF06L STD16NF06L-1 N-channel 60V - 0.060 - 24A - DPAK/IPAK STripFET II Power MOSFET General features Type VDSS RDS(on) ID STD16NF06L-1 60V

 9.13. Size:1032K  st
 stb16n65m5 std16n65m5.pdf

STB16N65M5 STD16N65M5 N-channel 650 V, 0.270 , 12 A MDmesh V Power MOSFET in D PAK, DPAK Features VDSS @ RDS(on) Type ID TJmax max. STB16N65M5 710 V

 9.14. Size:835K  cn vbsemi
 std16nf06.pdf

STD16NF06 www.VBsemi.tw N-Channel 6 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Available 175 C Junction Temperature 0.025 at VGS = 10 V 35 RoHS* 60 0.030 at VGS = 4.5 V 30 COMPLIANT TO-252 D G Drain Connected to Tab G D S S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise n