13003DE . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

UNISONIC TECHNOLOGIES CO., LTD 13003DE Preliminary NPN SILICON TRANSISTOR SILICON TRIPLE DIFFUSION NPN BIPOLAR TRANSISTORS DESCRIPTION The UTC 13003DE is a silicon NPN power switching transistor; it uses UTCs advanced technology to provide customers high collector-base breakdown voltage, low reverse leakage current and high reliability, etc. The UTC 13003DE is suitable

ST13003D-KHigh voltage fast-switching NPN power transistorFeatures High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Integrated antiparallel collector-emitter diode123ApplicationsSOT-32 Electronic ballast for fluorescent lightingDescriptionFigure 1. Internal schemati

ST13003DNHigh voltage fast-switching NPN power transistorPreliminary dataFeatures High voltage capability Low spread of dynamic parameters Very high switching speed Integrated free-wheeling diode3Application 21 Compact fluorescent lamps (CFLs)SOT-32DescriptionThe device is manufactured using high voltage multi epitaxial planar technology for high swi

DXT13003DK450V NPN HIGH VOLTAGE POWER TRANSISTOR IN TO252 Features Mechanical Data BVCEO > 450V Case: TO252 (DPAK) BVCES > 700V Case Material: Molded Plastic, "Green" Molding Compound BVEBO > 9V UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 IC = 1.5A high Continuous Collector Current Integrated Anti-Parall

DXT13003DG450V NPN HIGH VOLTAGE POWER TRANSISTOR IN SOT223 Features Mechanical Data BVCEO > 450V Case: SOT223 BVCES > 700V Case Material: Molded Plastic. Green Molding Compound BVEBO > 9V UL Flammability Rating 94V-0 IC = 1.5A high Continuous Collector Current Moisture Sensitivity: Level 1 per J-STD-020 Integrated Collector-Emitter Diode to act

UNISONIC TECHNOLOGIES CO., LTD 13003DW Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION DESCRIPTION The UTC 13003DW is a silicon NPN power switching transistor; it uses UTCs advanced technology to provide customers high collector-base breakdown voltage and high reliability, etc. The UTC 13003DW is suitable for electronic

UNISONIC TECHNOLOGIES CO., LTD MJE13003D NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13003D is a NPN Power Transistor. It is intended to be used in applications requiring medium voltage capability and high switching speeds. FEATURES * Fast-Switching And High Voltage Capability * Dynamic Parameters With Low Spread

UNISONIC TECHNOLOGIES CO., LTD 13003DH Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION DESCRIPTION The UTC 13003DH is a silicon NPN power switching transistor; it uses UTCs advanced technology to provide customers high collector-base breakdown voltage, low reverse leakage current and high reliability, etc. The UTC 130

UNISONIC TECHNOLOGIES CO., LTD 13003DF Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION DESCRIPTION The UTC 13003DF is a silicon NPN power switching transistor; it uses UTCs advanced technology to provide customers high collector-base breakdown voltage, low reverse leakage current and high reliability, etc. The UTC 130

UNISONIC TECHNOLOGIES CO., LTD MJE13003D-P Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13003D-P is a NPN Power Transistor. It is intended to be used in applications requiring medium voltage capability and high switching speeds. FEATURES * Fast-Switching And High Voltage Capability * Dynamic Parameters W

STD13003DNPN Silicon Power TransistorApplications PIN Connection Power amplifier application High current switching application Features High speed switching VCEO(sus)=400V Suitable for Switching Regulator and Motor Control TO-252 Ordering Information Type NO. Marking Package Code STD13003D STD13003 TO-252Absolute Maximum Ratings (Ta=25)

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON POWER TRANSISTOR CD13003DTO126 Plastic PackageWith Built - in Integrated Diode between Emitter & CollectorABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL VALUE UNITCollector Base Voltage VCBO 600 VCollector Emitter (sus) Voltage VCEO 400 VEmitter Base Voltage VEBO 9.0 VCollector

Spec. No. : HD200207 HI-SINCERITY Issued Date : 1993.04.12 Revised Date : 2007.09.04 MICROELECTRONICS CORP. Page No. : 1/5 HMJE13003D NPN EPITAXIAL PLANAR TRANSISTOR Description High Voltage, High Speed Power Switch TO-126ML Switch Regulators PWM Inverters and Motor Controls Solenoid and Relay Drivers Deflection Circuits Absolute Maximum Ratings

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationNPN D / D SERIES TRANSISTORS MJE13003DNPN D / D SERIES TRANSISTORS MJE13003DNPN D

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationNPN D / D SERIES TRANSISTORS MJE13003DNPN D / D SERIES TRANSISTORS MJE13003DNPN D

Spec. No. : C827D3 Issued Date : 2012.04.09 CYStech Electronics Corp.Revised Date : Page No. : 1/7 General Purpose NPN Epitaxial Planar Transistor BTN13003D3Features High breakdown voltage, V =450V (min.) CEO High collector current, I =1.5A (DC) C(max) Pb-free package Symbol Outline BTN13003D3 TO-126ML BBase CCollector EEmitter E C B Abs

MJE13003DI1G Rev.B May.-2020 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features High Voltage Capability High Speed Switching. HF Product. / Applications

RS13003DL www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Mainly used for 110V power Fluorescent Lamp Electronic Ballastetc 222

RH13003DL www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Mainly used for 110V power Fluorescent Lamp Electronic Ballastetc 222

RH13003D www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast and Switch-mode power supplies 222

RP13003D www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast and Switch-mode power supplies 222

RBU13003D www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast and Switch-mode power supplies 222

RS13003DL www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Mainly used for 110V power Fluorescent Lamp Electronic Ballastetc 222

RH13003D www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast and Switch-mode power supplies 222

RH13003D www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast and Switch-mode power supplies 222

SEMICONDUCTORMJE13003DTECHNICAL DATASWITCHING REGULATOR APPLICATION.HIGH VOLTAGE AND HIGH SPEED SWITCHING APPLICATION.AICJFEATURESExcellent Switching Times: ton=1.1S(Max.), tf=0.5S(Max.), at IC=1.0ADIM MILLIMETERSA 6 50 0 2High Collector Voltage : VCBO=700V.B 5 60 0 2C 5 20 0 2D 1 50 0 2MAXIMUM RATING (Ta=25C)E 2 70 0 2F 2 30 0 1

WBD13003DWBD13003DWBD13003DWBD13003DHighVoltageFast-SwitchingNPNPowerTransistorFeaturessymbolsymbolsymbolsymbol Very High Switching Speed2.Collector High Voltage Capability Wide Reverse Bias SOA 1.Base Built-in free wheeling diode3.EmitterGeneral DescriptionThis Device is designed for high Voltage ,High speedswitching Characteristics required such

WBR13003DWBR13003DWBR13003DWBR13003DHigh Voltage Fast-Switching NPN Power TransistorFeaturesFeaturesFeaturesFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA Built-in freewheeling diodeGeneral DescriptionGeneral DescriptionGeneral DescriptionGeneral DescriptionThis Device is designed for high voltage, High speedswitc

WBP13003DWBP13003DWBP13003DWBP13003DHighVoltageFast-SwitchingNPNPowerTransistorFeaturessymbolsymbolsymbolsymbol Very High Switching Speed2.Collector High Voltage Capability Wide Reverse Bias SOA 1.Base Built-in free wheeling diode3.EmitterGeneral DescriptionThis Device is designed for high Voltage ,High speedswitching Characteristics required such

WBR13003D1WBR13003D1WBR13003D1WBR13003D1High Voltage Fast-Switching NPN Power TransistorFeaturesFeaturesFeaturesFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA Built-in freewheeling diodeGeneral DescriptionGeneral DescriptionGeneral DescriptionGeneral DescriptionThis Device is designed for high voltage, High speeds

SBP13003DSBP13003DSBP13003DSBP13003DHigh Voltage Fast -Switching NPN Power TransistorFeaturessymbolsymbolsymbolsymbol Very High Switching Speed2.Collector High Voltage Capability Wide Reverse Bias SOA1.Base Built-in free wheeling diode3.EmitterGeneral DescriptionThis Device is designed for high Voltage ,High speedswitching Characteristics requir

SBR13003DSBR13003DSBR13003DSBR13003DHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorFeaturesFeaturesFeaturesFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA Built-in freewheeling

Data Sheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR APT13003DGeneral Description FeaturesThe APT13003D is a high voltage, high speed, high High Switching Speedefficiency switching transistor, and it is specially High Collector-Emitter Voltage: 700Vdesigned for off-line switch mode power supplies with Low Costlow output power. High EfficiencyThe APT13003D

TRANSISTOR E13003DA MAIN CHARACTERISTICS FEATURES IC 1.5A High breakdown voltage VCBO 700V High switching speed VCEO 400V High current capability PC 1.5W High reliability RoHS RoHS product APPLICATIONS Energy-saving light Electronic ballasts

MJE13003DN5(3DD13003DN5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V

MJE13003DK1(3DD13003DK1) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

MJE13003DI5(3DD13003DI5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 800 V

MJE13003DI1(3DD13003DI1) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

MJE13003DK3(3DD13003DK3) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V

MJE13003DG1(3DD13003DG1) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

MJE13003DK5(3DD13003DK5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

MJE13003DG5(3DD13003DG5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700

MJE13003DI3(3DD13003DI3) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 800 V

MJE13003DK7(3DD13003DK7) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

MOTMOT13003C/MOT13003DNPN SILICON TRANSISTORSymbol PRODUCT CHARACTERISTICSBVCBO700VBVCEO400V10-40HFE@5V1AIC 1.5A FEATURES* Inductive switching matrix 0.5 ~ 1.5 Amp, 25 and 100C Typical tc = 290ns @ 1A, 100C. * 700V blocking capability APPLICATIONS* Switching regulators, inverters * Motor controls * Solenoid/Relay drivers * Deflection circuit

INCHANGE Semiconductor Product Specification Silicon NPN Power Transistor MJE13003D DESCRIPTION High Voltage Capability High Speed Switching Wide Area of Safe Operation APPLICATIONS Fluorescent lamp Electronic ballast Electronic transformer Switch mode power supply ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage 7