13003DE Todos los transistores

UNISONIC TECHNOLOGIES CO., LTD 13003DE Preliminary NPN SILICON TRANSISTOR SILICON TRIPLE DIFFUSION NPN BIPOLAR TRANSISTORS DESCRIPTION The UTC 13003DE is a silicon NPN power switching transistor; it uses UTC s advanced technology to provide customers high collector-base breakdown voltage, low reverse leakage current and high reliability, etc. The UTC 13003DE is suitable

ST13003D-K High voltage fast-switching NPN power transistor Features High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Integrated antiparallel collector-emitter diode 1 2 3 Applications SOT-32 Electronic ballast for fluorescent lighting Description Figure 1. Internal schemati

ST13003DN High voltage fast-switching NPN power transistor Preliminary data Features High voltage capability Low spread of dynamic parameters Very high switching speed Integrated free-wheeling diode 3 Application 2 1 Compact fluorescent lamps (CFLs) SOT-32 Description The device is manufactured using high voltage multi epitaxial planar technology for high swi

DXT13003DK 450V NPN HIGH VOLTAGE POWER TRANSISTOR IN TO252 Features Mechanical Data BVCEO > 450V Case TO252 (DPAK) BVCES > 700V Case Material Molded Plastic, "Green" Molding Compound BVEBO > 9V UL Flammability Classification Rating 94V-0 Moisture Sensitivity Level 1 per J-STD-020 IC = 1.5A high Continuous Collector Current Integrated Anti-Parall

DXT13003DG 450V NPN HIGH VOLTAGE POWER TRANSISTOR IN SOT223 Features Mechanical Data BVCEO > 450V Case SOT223 BVCES > 700V Case Material Molded Plastic. Green Molding Compound BVEBO > 9V UL Flammability Rating 94V-0 IC = 1.5A high Continuous Collector Current Moisture Sensitivity Level 1 per J-STD-020 Integrated Collector-Emitter Diode to act

UNISONIC TECHNOLOGIES CO., LTD 13003DW Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION DESCRIPTION The UTC 13003DW is a silicon NPN power switching transistor; it uses UTC s advanced technology to provide customers high collector-base breakdown voltage and high reliability, etc. The UTC 13003DW is suitable for electronic

UNISONIC TECHNOLOGIES CO., LTD MJE13003D NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13003D is a NPN Power Transistor. It is intended to be used in applications requiring medium voltage capability and high switching speeds. FEATURES * Fast-Switching And High Voltage Capability * Dynamic Parameters With Low Spread

UNISONIC TECHNOLOGIES CO., LTD 13003DH Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION DESCRIPTION The UTC 13003DH is a silicon NPN power switching transistor; it uses UTC s advanced technology to provide customers high collector-base breakdown voltage, low reverse leakage current and high reliability, etc. The UTC 130

UNISONIC TECHNOLOGIES CO., LTD 13003DF Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION DESCRIPTION The UTC 13003DF is a silicon NPN power switching transistor; it uses UTC s advanced technology to provide customers high collector-base breakdown voltage, low reverse leakage current and high reliability, etc. The UTC 130

UNISONIC TECHNOLOGIES CO., LTD MJE13003D-P Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13003D-P is a NPN Power Transistor. It is intended to be used in applications requiring medium voltage capability and high switching speeds. FEATURES * Fast-Switching And High Voltage Capability * Dynamic Parameters W

STD13003D NPN Silicon Power Transistor Applications PIN Connection Power amplifier application High current switching application Features High speed switching VCEO(sus)=400V Suitable for Switching Regulator and Motor Control TO-252 Ordering Information Type NO. Marking Package Code STD13003D STD13003 TO-252 Absolute Maximum Ratings (Ta=25 )

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON POWER TRANSISTOR CD13003D TO126 Plastic Package With Built - in Integrated Diode between Emitter & Collector ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector Base Voltage VCBO 600 V Collector Emitter (sus) Voltage VCEO 400 V Emitter Base Voltage VEBO 9.0 V Collector

Spec. No. HD200207 HI-SINCERITY Issued Date 1993.04.12 Revised Date 2007.09.04 MICROELECTRONICS CORP. Page No. 1/5 HMJE13003D NPN EPITAXIAL PLANAR TRANSISTOR Description High Voltage, High Speed Power Switch TO-126ML Switch Regulators PWM Inverters and Motor Controls Solenoid and Relay Drivers Deflection Circuits Absolute Maximum Ratings

Spec. No. C827D3 Issued Date 2012.04.09 CYStech Electronics Corp. Revised Date Page No. 1/7 General Purpose NPN Epitaxial Planar Transistor BTN13003D3 Features High breakdown voltage, V =450V (min.) CEO High collector current, I =1.5A (DC) C(max) Pb-free package Symbol Outline BTN13003D3 TO-126ML B Base C Collector E Emitter E C B Abs

MJE13003DI1G Rev.B May.-2020 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features High Voltage Capability High Speed Switching. HF Product. / Applications

R H13003D www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 1 1 1 APPLICATION 1 Fluorescent Lamp Electronic Ballast and Switch-mode power supplies 2 2 2

R P13003D www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 1 1 1 APPLICATION 1 Fluorescent Lamp Electronic Ballast and Switch-mode power supplies 2 2 2

R H13003D www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 1 1 1 APPLICATION 1 Fluorescent Lamp Electronic Ballast and Switch-mode power supplies 2 2 2

R H13003D www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 1 1 1 APPLICATION 1 Fluorescent Lamp Electronic Ballast and Switch-mode power supplies 2 2 2

SEMICONDUCTOR MJE13003D TECHNICAL DATA SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE AND HIGH SPEED SWITCHING APPLICATION. A I C J FEATURES Excellent Switching Times ton=1.1 S(Max.), tf=0.5 S(Max.), at IC=1.0A DIM MILLIMETERS A 6 50 0 2 High Collector Voltage VCBO=700V. B 5 60 0 2 C 5 20 0 2 D 1 50 0 2 MAXIMUM RATING (Ta=25 C) E 2 70 0 2 F 2 30 0 1

WBD13003D WBD13003D WBD13003D WBD13003D HighVoltageFast-SwitchingNPNPowerTransistor Features symbol symbol symbol symbol Very High Switching Speed 2.Collector High Voltage Capability Wide Reverse Bias SOA 1.Base Built-in free wheeling diode 3.Emitter General Description This Device is designed for high Voltage ,High speed switching Characteristics required such

WBR13003D WBR13003D WBR13003D WBR13003D High Voltage Fast-Switching NPN Power Transistor Features Features Features Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA Built-in freewheeling diode General Description General Description General Description General Description This Device is designed for high voltage, High speed switc

WBP13003D WBP13003D WBP13003D WBP13003D HighVoltageFast-SwitchingNPNPowerTransistor Features symbol symbol symbol symbol Very High Switching Speed 2.Collector High Voltage Capability Wide Reverse Bias SOA 1.Base Built-in free wheeling diode 3.Emitter General Description This Device is designed for high Voltage ,High speed switching Characteristics required such

WBR13003D1 WBR13003D1 WBR13003D1 WBR13003D1 High Voltage Fast-Switching NPN Power Transistor Features Features Features Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA Built-in freewheeling diode General Description General Description General Description General Description This Device is designed for high voltage, High speed s

SBP13003D SBP13003D SBP13003D SBP13003D High Voltage Fast -Switching NPN Power Transistor Features symbol symbol symbol symbol Very High Switching Speed 2.Collector High Voltage Capability Wide Reverse Bias SOA 1.Base Built-in free wheeling diode 3.Emitter General Description This Device is designed for high Voltage ,High speed switching Characteristics requir

SBR13003D SBR13003D SBR13003D SBR13003D High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor Features Features Features Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA Built-in freewheeling

Data Sheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR APT13003D General Description Features The APT13003D is a high voltage, high speed, high High Switching Speed efficiency switching transistor, and it is specially High Collector-Emitter Voltage 700V designed for off-line switch mode power supplies with Low Cost low output power. High Efficiency The APT13003D

MJE13003DN5(3DD13003DN5) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 700 V

MJE13003DK1(3DD13003DK1) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V

MJE13003DI5(3DD13003DI5) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 800 V

MJE13003DI1(3DD13003DI1) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V

MJE13003DK3(3DD13003DK3) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 700 V

MJE13003DG1(3DD13003DG1) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V

MJE13003DK5(3DD13003DK5) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V

MJE13003DG5(3DD13003DG5) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 700

MJE13003DI3(3DD13003DI3) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 800 V

MJE13003DK7(3DD13003DK7) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V

MOT MOT13003C/MOT13003D NPN SILICON TRANSISTOR Symbol PRODUCT CHARACTERISTICS BVCBO 700V BVCEO 400V 10-40 HFE@5V1A IC 1.5A FEATURES * Inductive switching matrix 0.5 1.5 Amp, 25 and 100 C Typical tc = 290ns @ 1A, 100 C. * 700V blocking capability APPLICATIONS * Switching regulator s, inverters * Motor controls * Solenoid/Relay drivers * Deflection circuit

INCHANGE Semiconductor Product Specification Silicon NPN Power Transistor MJE13003D DESCRIPTION High Voltage Capability High Speed Switching Wide Area of Safe Operation APPLICATIONS Fluorescent lamp Electronic ballast Electronic transformer Switch mode power supply ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 7