2N6387 Todos los transistores

 ..1. Size:164K  motorola
 2n6387 2n6388.pdf

Order this document MOTOROLA by 2N6387/D SEMICONDUCTOR TECHNICAL DATA 2N6387 Plastic Medium-Power 2N6388* Silicon Transistors *Motorola Preferred Device . . . designed for general purpose amplifier and low speed switching applications. DARLINGTON High DC Current Gain 8 AND 10 AMPERE hFE = 2500 (Typ) @ IC = 4.0 Adc NPN SILICON Collector Emitter Sustaining Voltage

 ..2. Size:87K  cdil
 2n6387 8.pdf

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company 2N6387 NPN PLASTIC MEDIUM DARLINGTON POWER TRANSISTORS 2N6388 TO-220 Plastic Package Designed for General Purpose Amplifier and Low Speed Switching Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL 2N6387 2N6388 UNIT VCEO Collector Emitter Voltage 60 80 V VCBO Collector Base Voltage

 ..3. Size:158K  jmnic
 2n6386 2n6387 2n6388.pdf

JMnic Product Specification Silicon NPN Power Transistors 2N6386 2N6387 2N6388 DESCRIPTION With TO-220C package Complement to type 2N6666/6667/6668 DARLINGTON High DC current gain Low collector saturation voltage APPLICATIONS Designed for general-purpose amplifier and low speed switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to

 ..4. Size:121K  inchange semiconductor
 2n6386 2n6387 2n6388.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6386 2N6387 2N6388 DESCRIPTION With TO-220C package Complement to type 2N6666/6667/6668 DARLINGTON High DC current gain Low collector saturation voltage APPLICATIONS Designed for general-purpose amplifier and low speed switching applications PINNING PIN DESCRIPTION 1 Base Collecto

 9.1. Size:109K  st
 2n6388.pdf

2N6388 SILICON NPN POWER DARLINGTON TRANSISTOR STMicroelectronics PREFERRED SALESTYPE NPN DARLINGTON HIGH CURRENT CAPABILITY INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE DESCRIPTION The device is a silicon Epitaxial-Base NPN power 3 2 transistor in monolithic Darlington configuration 1 mounted in Jedec TO-220 plastic package. It is inteded for use in low and mediu

 9.2. Size:205K  central
 2n6383 2n6384 2n6385.pdf

TM 2N6383 Central 2N6384 Semiconductor Corp. 2N6385 NPN SILICON POWER DESCRIPTION DARLINGTON TRANSISTOR The CENTRAL SEMICONDUCTOR 2N3683 SERIES types are NPN Silicon Power Darlington Transistors designed for power amplifier applications. MARKING FULL PART NUMBER TO-3 CASE MAXIMUM RATINGS (TC=25 C) SYMBOL 2N6383 2N6384 2N6385 UNITS Collector-Base Voltage VCBO 40 60 80 V Coll

 9.3. Size:160K  mospec
 2n6386-88.pdf

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 9.4. Size:146K  mospec
 2n6383-85 2n6648-49 2n6650.pdf

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 9.5. Size:19K  semelab
 2n6385smd05.pdf

2N6385SMD05 MECHANICAL DATA Dimensions in mm (inches) SILICON POWER NPN DARLINGTON TRANSISTOR 7.54 (0.296) 0.76 (0.030) min. FEATURES 3.175 (0.125) 2.41 (0.095) 2.41 (0.095) Max. 0.127 (0.005) High Gain Darlington Performance 1 3 2 APPLICATIONS Audio Amplifiers Hammer Drivers 0.127 (0.005) Shunt and Series Regulators 16 PLCS 0.127 (0.005) 0.50(0.020)

 9.6. Size:153K  jmnic
 2n6383 2n6384 2n6385.pdf

JMnic Product Specification Silicon NPN Power Transistors 2N6383 2N6384 2N6385 DESCRIPTION With TO-3 package Complement to type 2N6648/6649/6650 DARLINGTON High DC current gain APPLICATIONS Designed for low and medium frequency power application such as power switching audio amplifer ,hammer drivers and shunt and series regulators PINNING PIN DESCRIPTION 1 B

 9.7. Size:41K  hsmc
 h2n6388.pdf

Spec. No. HE6714 HI-SINCERITY Issued Date 1992.12.15 Revised Date 2004.11.03 MICROELECTRONICS CORP. Page No. 1/4 H2N6388 NPN EPITAXIAL PLANAR TRANSISTOR Description The H2N6388 is designed for general-purpose amplifier and switching applications. TO-220 Absolute Maximum Ratings (TA=25 C) Maximum Temperatures Storage Temperature ........................................

 9.8. Size:118K  inchange semiconductor
 2n6383 2n6384 2n6385.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6383 2N6384 2N6385 DESCRIPTION With TO-3 package Complement to type 2N6648/6649/6650 DARLINGTON High DC current gain APPLICATIONS Designed for low and medium frequency power application such as power switching audio amplifer ,hammer drivers and shunt and series regulators PINNING PIN

 9.9. Size:120K  inchange semiconductor
 2n6388.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6388 DESCRIPTION With TO-220 package High current capability DARLINGTON APPLICATIONS Intended for use in low and medium frequency power applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMET