2SC5353B Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SC5353B

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 25 W

Tensión colector-base (Vcb): 900 V

Tensión colector-emisor (Vce): 750 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 10

Encapsulados: TO-220 TO-126 TO-251 TO-252

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2SC5353B datasheet

 ..1. Size:275K  utc
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2SC5353B

UNISONIC TECHNOLOGIES CO., LTD 2SC5353B NPN SILICON TRANSISTOR HIGH VOLTAGE NPN 1 1 TRANSISTOR TO-126 TO-126C DESCRIPTION 1 1 TO-220 TO-220F Switching Regulator and High Voltage Switching Applications High-Speed DC-DC Converter Applications. FEATURES 1 1 * Excellent switching times tR = 0.7 s(MAX), tF = 0.5 s (MAX) TO-220F1 TO-251 * High collectors breakdown

 7.1. Size:207K  toshiba
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2SC5353B

 7.2. Size:273K  utc
2sc5353.pdf pdf_icon

2SC5353B

UNISONIC TECHNOLOGIES CO., LTD 2SC5353 NPN SILICON TRANSISTOR HIGH VOLTAGE NPN TRANSISTOR 1 1 TO-126 TO-126C DESCRIPTION Switching Regulator and High Voltage Switching Applications High-Speed DC-DC Converter Applications 1 1 TO-220 TO-220F FEATURES * Excellent switching times tR = 0.7 s(MAX), tF = 0.5 s (MAX) * High collectors breakdown voltage VCEO = 700V 1

 7.3. Size:208K  inchange semiconductor
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2SC5353B

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5353 DESCRIPTION Collector Emitter Sustaining Voltage V = 800V(Min.) CEO(SUS) Low Collector Saturation Voltage V =1V(Max) @ I = 1.2A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in lighting applications and low cost switch-mode power

Otros transistores... 13003DE, 13003DF, 13003DH, 13003DW, 13003EDA, 13005EC, 2SA1627A, 2SC5027E, TIP31, 2SC5889, 2SD2470, 4124D, 4126D, 4128D, 5302D, C6084, D4120P