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2SC5353B . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SC5353B
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 25 W
   Tensión colector-base (Vcb): 900 V
   Tensión colector-emisor (Vce): 750 V
   Tensión emisor-base (Veb): 7 V
   Corriente del colector DC máxima (Ic): 3 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 10
   Paquete / Cubierta: TO-220 TO-126 TO-251 TO-252
 

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2SC5353B Datasheet (PDF)

 ..1. Size:275K  utc
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2SC5353B

UNISONIC TECHNOLOGIES CO., LTD 2SC5353B NPN SILICON TRANSISTOR HIGH VOLTAGE NPN 1 1TRANSISTOR TO-126TO-126C DESCRIPTION 11TO-220 TO-220FSwitching Regulator and High Voltage Switching ApplicationsHigh-Speed DC-DC Converter Applications. FEATURES 11* Excellent switching times: tR = 0.7s(MAX), tF = 0.5s (MAX) TO-220F1 TO-251* High collectors breakdown

 7.1. Size:207K  toshiba
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2SC5353B

 7.2. Size:273K  utc
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2SC5353B

UNISONIC TECHNOLOGIES CO., LTD 2SC5353 NPN SILICON TRANSISTOR HIGH VOLTAGE NPN TRANSISTOR 11TO-126 TO-126C DESCRIPTION Switching Regulator and High Voltage Switching Applications High-Speed DC-DC Converter Applications 11TO-220 TO-220F FEATURES * Excellent switching times: tR = 0.7s(MAX), tF = 0.5s (MAX) * High collectors breakdown voltage: VCEO = 700V 1

 7.3. Size:208K  inchange semiconductor
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2SC5353B

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5353DESCRIPTIONCollectorEmitter Sustaining Voltage: V = 800V(Min.)CEO(SUS)Low Collector Saturation Voltage: V =1V(Max) @ I = 1.2ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in lighting applications and low costswitch-mode power

MOSTRAR MÁS

Otros transistores... 13003DE , 13003DF , 13003DH , 13003DW , 13003EDA , 13005EC , 2SA1627A , 2SC5027E , 2SD2499 , 2SC5889 , 2SD2470 , 4124D , 4126D , 4128D , 5302D , C6084 , D4120P .

 

 
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