MMBT9014 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MMBT9014

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.225 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 45 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 150 MHz

Capacitancia de salida (Cc): 2.2 pF

Ganancia de corriente contínua (hFE): 60

Encapsulados: SOT-23

 Búsqueda de reemplazo de MMBT9014

- Selecciónⓘ de transistores por parámetros

 

MMBT9014 datasheet

 ..1. Size:172K  utc
 mmbt9014.pdf pdf_icon

MMBT9014

UNISONIC TECHNOLOGIES CO., LTD MMBT9014 NPN SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE 3 FEATURES * High Total Power Dissipation. (450mW) 1 * Excellent hFE Linearity. 2 * Complementary to UTC MMBT9015 SOT-23 (JEDEC TO-236) ORDERING INFORMATION Pin Assignment Ordering Number Package Packing 1 2 3 MMBT9014G-x-AE3-R SOT-23 E B C Tape Reel Note Pin

 0.1. Size:66K  semtech
 mmbt9014b mmbt9014c mmbt9014d.pdf pdf_icon

MMBT9014

MMBT9014 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications As complementary types the PNP transistor MMBT9015 is recommended. TO-236 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO 50 V Collector Emitter Voltage VCEO 45 V Emitter Base Voltage VEBO 5 V Collector Current IC 100 mA

 0.2. Size:78K  semtech
 mmbt9014c1.pdf pdf_icon

MMBT9014

MMBT9014C1 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications As complementary types the PNP transistor MMBT9015 is recommended. 1.Base 2.Emitter 3.Collector TO-236 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO 50 V Collector Emitter Voltage VCEO 45 V Emitter Base Voltage VEBO

 0.3. Size:136K  wej
 mmbt9014lt1.pdf pdf_icon

MMBT9014

RoHS MMBT9014LT1 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 3 PRF-AMPLIFIER,LOW LEVEL&LOW NOISE 1 Complemen to MMPT9015LT1 Collector-current Ic=100mA 2 Collector-Emiller Voltage VCE=45V 1. 1.BASE High Totalpower Dissipation Pc=225mW 2.EMITTER High life And Good Linearity 2.4 3.COLLECTOR 1.3 Unit mm o ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Symbol Rating Unit Characterist

MOSTRAR MÁS

Otros transistores... X1049A, 2SC2328A, 2SD882S, 8050S, D882SS, HE8051, MMBT1815, MMBT9013, BC337, MMBT945, MN2510, 2SA928A, 2SB772S, 8550S, B772SS, HE8551, MMBT1015