MMBT945 Todos los transistores

 ..1. Size:179K  utc
 mmbt945.pdf

UNISONIC TECHNOLOGIES CO., LTD MMBT945 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR DESCRIPTION The UTC MMBT945 is an audio frequency amplifier high frequency OSC NPN transistor. FEATURES * Collector-Emitter Voltage BVCBO=50V * Collector Current up to 150mA * High hFE Linearity * Complimentary to UTC MMBT733 ORDERING INFORMA

 0.1. Size:263K  mcc
 mmbt945-h-l.pdf

MCC MMBT945-L Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 MMBT945-H Phone (818) 701-4933 Fax (818) 701-4939 Features Capable of 0.2Watts of Power Dissipation. NPN Silicon Collector-current 0.15A Collector-base Voltage 60V Plastic-Encapsulate Operating and storage junction temperature range -55OC to +150O

 9.1. Size:97K  motorola
 mmbt918l.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBT918LT1/D VHF/UHF Transistor MMBT918LT1 NPN Silicon COLLECTOR 3 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector Emitter Voltage VCEO 15 Vdc CASE 318 08, STYLE 6 SOT 23 (TO 236AB) Collector Base Voltage VCBO 30 Vdc Emitter Base Voltage VEBO 3.0 Vdc Collector Current Co

 9.2. Size:748K  fairchild semi
 pn918 mmbt918.pdf

PN918 MMBT918 C E C TO-92 B B E SOT-23 Mark 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 15 V VCBO Collector-Base Voltage 30 V

 9.3. Size:113K  onsemi
 mmbt918lt1-d.pdf

MMBT918LT1G VHF/UHF Transistor NPN Silicon Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit BASE Collector-Emitter Voltage VCEO 15 Vdc Collector-Base Voltage VCBO 30 Vdc 2 EMITTER Emitter-Base Voltage VEBO 3.0 Vdc Collector Current - Continuous IC 50 mAdc THERMAL CHARA

 9.4. Size:75K  onsemi
 mmbt918lt1g.pdf

MMBT918LT1G VHF/UHF Transistor NPN Silicon Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS www.onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit BASE Collector-Emitter Voltage VCEO 15 Vdc Collector-Base Voltage VCBO 30 Vdc 2 EMITTER Emitter-Base Voltage VEBO 3.0 Vdc Collector Current - Continuous IC 50 mAdc 3 THERMAL CHARAC

 9.5. Size:624K  onsemi
 pn918 mmbt918.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.6. Size:98K  utc
 mmbt9012.pdf

UTC MMBT9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES 2 *High total power dissipation. (625mW) 1 *High collector current. (-500mA) *Excellent hFE linearity *Complementary to UTC MMBT9013 3 MARKING 12 SOT-23 1 EMITTER 2 BASE 3 COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C, unless otherwise specifie

 9.7. Size:110K  utc
 mmbt9015.pdf

UNISONIC TECHNOLOGIES CO., LTD MMBT9015 PNP SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE 3 FEATURES *High total power dissipation. (450mW) 1 *Excellent hFE linearity. 2 *Complementary to UTC MMBT9014 SOT-23 (JEDEC TO-236) ORDERING INFORMATION Pin Assignment Ordering Number Package Packing 1 2 3 MMBT9015G-x-AE3-R SOT-23 E B C Tape Reel Note Pin As

 9.8. Size:172K  utc
 mmbt9014.pdf

UNISONIC TECHNOLOGIES CO., LTD MMBT9014 NPN SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE 3 FEATURES * High Total Power Dissipation. (450mW) 1 * Excellent hFE Linearity. 2 * Complementary to UTC MMBT9015 SOT-23 (JEDEC TO-236) ORDERING INFORMATION Pin Assignment Ordering Number Package Packing 1 2 3 MMBT9014G-x-AE3-R SOT-23 E B C Tape Reel Note Pin

 9.9. Size:175K  utc
 mmbt9012g-d mmbt9012g-e mmbt9012g-f mmbt9012g-g mmbt9012g-h mmbt9012g-i.pdf

UNISONIC TECHNOLOGIES CO., LTD MMBT9012 PNP SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION 3 FEATURES 1 2 *High total power dissipation. (625mW) SOT-23 *High collector current. (-500mA) (JEDEC TO-236) *Excellent hFE linearity *Complementary to UTC MMBT9013 ORDERING INFORMATION Pin Assignment Ordering Number Package P

 9.10. Size:106K  utc
 mmbt9018.pdf

UNISONIC TECHNOLOGIES CO., LTD MMBT9018 NPN SILICON TRANSISTOR AM/FM AMPLIFIER, LOCAL 3 OSCILLATOR OF FM/VHF TUNER 1 2 SOT-23 FEATURES * High Current Gain Bandwidth Product 3 f T = 1.1GHz (Typ) 1 2 SOT-523 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Plating Halogen Free 1 2 3 MMBT9018L-x-AE3-R MMBT9018G-x-AE3-R SOT-23 E B

 9.11. Size:144K  utc
 mmbt9013.pdf

UNISONIC TECHNOLOGIES CO., LTD MMBT9013 NPN SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES *High total Power Dissipation. (625mW) *High Collector Current. (500mA) *Excellent hFE linearity. *Complementary to UTC MMBT9012 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Normal Lead Free Halogen Fre

 9.12. Size:676K  semtech
 mmbt9013g mmbt9013h.pdf

MMBT9013 NPN Silicon Epitaxial Planar Transistors for switching and amplifier applications. As complementary types the PNP transistor MMBT9012 is recommended. TO-236 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 30 V Emitter Base Voltage VEBO 5 V Collector Current IC 500 mA Po

 9.13. Size:173K  semtech
 mmbt9012g mmbt9012h.pdf

MMBT9012 PNP Silicon Epitaxial Planar Transistors for switching and amplifier applications. TO-236 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 30 V Emitter Base Voltage -VEBO 5 V Collector Current -IC 500 mA Power Dissipation Ptot 200 mW O Junction Temperature Tj 150 C O

 9.14. Size:66K  semtech
 mmbt9014b mmbt9014c mmbt9014d.pdf

MMBT9014 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications As complementary types the PNP transistor MMBT9015 is recommended. TO-236 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO 50 V Collector Emitter Voltage VCEO 45 V Emitter Base Voltage VEBO 5 V Collector Current IC 100 mA

 9.15. Size:179K  semtech
 mmbt9013h-h23.pdf

 9.16. Size:59K  semtech
 mmbt9018g mmbt9018h.pdf

MMBT9018G / MMBT9018H NPN Silicon Epitaxial Planar Transistor for AM/FM amplifier and local oscillator of FM/VHF tuner applications. SOT-23 Plastic Package O Absolute Maximum Ratings (T = 25 C) a Parameter Symbol Value Unit Collector Base Voltage VCBO 30 V Collector Emitter Voltage VCEO 15 V Emitter Base Voltage VEBO 5 V Collector Current IC 50 mA Power Dissipation Ptot 20

 9.17. Size:243K  semtech
 mmbt9015b mmbt9015c mmbt9015d.pdf

MMBT9015B / MMBT9015C / MMBT9015D PNP Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. As complementary types the NPN transistor MMBT9014B, MMBT9014C and MMBT9014D are recommended. SOT-23 Plastic Package O Absolute Maximum Ratings (T = 25 C) a Parameter Symbol Value Unit Collector Base Voltage -VCBO 50 V Collector Emitter Voltage -VCEO 45 V

 9.18. Size:120K  semtech
 mmbt9012h-h35.pdf

MMBT9012H-H35 PNP Silicon Epitaxial Planar Transistors for switching and amplifier applications. TO-236 Plastic Package Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 30 V Emitter Base Voltage -VEBO 5 V Collector Current -IC 500 mA Power Dissipation Ptot 200 mW Junction Temperature Tj 150

 9.19. Size:78K  semtech
 mmbt9014c1.pdf

MMBT9014C1 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications As complementary types the PNP transistor MMBT9015 is recommended. 1.Base 2.Emitter 3.Collector TO-236 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO 50 V Collector Emitter Voltage VCEO 45 V Emitter Base Voltage VEBO

 9.20. Size:120K  semtech
 mmbt9012h-h23.pdf

MMBT9012H-H23 PNP Silicon Epitaxial Planar Transistors for switching and amplifier applications. TO-236 Plastic Package Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 30 V Emitter Base Voltage -VEBO 5 V Collector Current -IC 500 mA Power Dissipation Ptot 200 mW O Junction Temperature Tj 150 C

 9.21. Size:135K  wej
 mmbt9012lt1.pdf

RoHS MMBT9012LT1 PNP EPITAXIAL SILICON TRANSISTOR SOT-23 3 1W OUTPUT AMPLIFIER OF PORTABLE 1 RADIOS IN CLASS B PUSH-PULL OPERATION 2 1. 1.BASE Complement to 9013G 2.EMITTER Collector Current Ic=-500mA 2.4 3.COLLECTOR 1.3 High Total Power Dissipation Pc=225mW Unit mm o ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Symbol Rating Unit Characteristic Collector-Base Voltage VCBO

 9.22. Size:136K  wej
 mmbt9014lt1.pdf

RoHS MMBT9014LT1 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 3 PRF-AMPLIFIER,LOW LEVEL&LOW NOISE 1 Complemen to MMPT9015LT1 Collector-current Ic=100mA 2 Collector-Emiller Voltage VCE=45V 1. 1.BASE High Totalpower Dissipation Pc=225mW 2.EMITTER High life And Good Linearity 2.4 3.COLLECTOR 1.3 Unit mm o ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Symbol Rating Unit Characterist

 9.23. Size:135K  wej
 mmbt9015lt1.pdf

RoHS MMBT9015LT1 PNP EPITAXIAL SILICON TRANSISTOR SOT-23 3 LOW FREQRENCY,LOW NOISE AMPLIFIER 1 Complemen to MMPT9014LT1 Collector-current Ic=-100mA 2 Collector-Emiller Voltage VCE=-45V 1. 1.BASE 2.EMITTER 2.4 3.COLLECTOR 1.3 Unit mm o ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Symbol Rating Unit Characteristic Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage V V

 9.24. Size:129K  wej
 mmbt9018lt1.pdf

RoHS MMBT9018LT1 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 3 AM/FM IF AMPLIFIER,LOCAL OSCILATOR 1 OF FM/VHF TUNER High Current Gain Bandwidth 2 Product fT=1100MHz 1. 1.BASE 2.EMITTER 2.4 3.COLLECTOR 1.3 Unit mm o ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Symbol Rating Unit Characteristic Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage V VCEO 15 V Emitter-Base Vol

 9.25. Size:138K  wej
 mmbt9013lt1.pdf

RoHS MMBT9013LT1 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 3 1W OUTPUT AMPLIFIER OF PORTABLE 1 RADIOS IN CLASS B PUSH-PULL OPERATION 2 1. 1.BASE Complement to 9012 2.EMITTER Collector Current Ic=500mA 2.4 3.COLLECTOR 1.3 High Total Power Dissipation Pc=225mW Unit mm o ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Symbol Rating Unit Characteristic Collector-Base Voltage VCBO 40

 9.26. Size:1743K  pjsemi
 mmbt9012g mmbt9012h.pdf

MMBT9012 PNP Transistor Features SOT-23 For Switching and AF Amplifer Applications. Equivalent Circuit 1.Base 2.Emitter 3.Collector 3.Collector Marking Code MMBT9012G K2 1.Base MMBT9012H K3 2. Emitter . Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage -V 40 V CBO Collec

 9.27. Size:507K  pjsemi
 mmbt9015-b mmbt9015-c mmbt9015-d.pdf

MMBT9015 PNP Transistor Features SOT-23 (TO-236) For Switching and Amplifier Applications. As Complementary Type of the PNP Transistor MMBT9014 is Recommended. 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage -V 50 V CBO Collector Emitter Voltage

 9.28. Size:492K  pjsemi
 mmbt9013-g mmbt9013-h.pdf

MMBT9013 NPN Transistor Features SOT-23 (TO-236) For Switching and Amplifier Applications. As Complementary Type of the PNP Transistor MMBT9012 is Recommended. 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage V 40 V CBO Collector Emitter Voltage V