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B772SS . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: B772SS

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.35 W

Tensión colector-base (Vcb): 40 V

Tensión colector-emisor (Vce): 30 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 80 MHz

Capacitancia de salida (Cc): 45 pF

Ganancia de corriente contínua (hfe): 100

Empaquetado / Estuche: SOT-23

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B772SS Datasheet (PDF)

1.1. b772ss.pdf Size:233K _utc

B772SS
B772SS

UNISONIC TECHNOLOGIES CO., LTD B772SS PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC B772SS is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES * High current output up to 3A * Low saturation voltage * Complement to D882SS ORDERING INFORMATION Order Number Pin A

5.1. 2sb772s 3ca772s.pdf Size:256K _update

B772SS
B772SS

2SB772S(3CA772S) 硅 PNP 半导体三极管/SILICON PNP TRANSISTOR 用途:用于 3 瓦音频放大输出,电压调节器,电源转换器和继电器驱/Purpose: Output stage of 3 watts audio amplifier, regulator, DC-DC converter and relay driver. 特点:饱和压降 V 小,线性极好,h 高/Features: Low saturation voltage, excellent h FE CE(sat) FE linearity and high h . FE 极限

5.2. btb772sa3.pdf Size:352K _upd

B772SS
B772SS

Spec. No. : C817A3-H Issued Date : 2003.05.31 CYStech Electronics Corp. Revised Date:2013.03.21 Page:1/6 Low Vcesat PNP Epitaxial Planar Transistor BTB772SA3 Features • Low VCE(sat),typically -0.3 V at IC / IB = -2A / -0.2A • Excellent current gain characteristics • Complementary to BTD882SA3 • Pb-free lead plating and halogen-free package Symbol Outline BTB77

5.3. 2sb772s.pdf Size:251K _utc

B772SS
B772SS

UNISONIC TECHNOLOGIES CO., LTD 2SB772S PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2SB772S is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES * High current output up to 3A * Low saturation voltage * Complement to 2SD882S ORDERING INFORMATION Ordering Number

5.4. b772s.pdf Size:346K _secos

B772SS
B772SS

B772S -3A , -40V PNP Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES Low speed switching. G H 1Emitter 1 1 1 2Collector 2 2 2 J 3Base 3 3 3 CLASSIFICATION OF hFE A D Millimeter Product-Rank B772S-R B772S-O B772S-Y B772S-GR REF. B Min. Max. A 4.40 4.70

5.5. tsb772sct.pdf Size:78K _taiwansemi

B772SS
B772SS

 TSB772S Low Vcesat PNP Transistor TO-92 Pin Definition: PRODUCT SUMMARY 1. Emitter BVCBO -50V 2. Collector 3. Base BVCEO -30V IC -3A VCE(SAT) -0.5V @ IC / IB = -2A / -200mA Features Ordering Information ● Low VCE(SAT) -0.25 @ IC / IB = 2A / 200mA (Typ.) Part No. Package Packing ● Complementary part with TSD882S TSB772SCT B0 TO-92 1Kpcs / Bulk Structure T

5.6. b772s.pdf Size:195K _lge

B772SS
B772SS

B772S Transistor(PNP) TO-92 1. EMITTER 2. COLLECTOR 3 BASE Features Low speed switching MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -6 V Dimensions in inches and (millimeters) IC Collector Current -Continuous -3 A PC Collector Power Dissipat

5.7. hsb772s.pdf Size:59K _hsmc

B772SS
B772SS

Spec. No. : HE6549 HI-SINCERITY Issued Date : 1992.11.25 Revised Date : 2004.08.13 MICROELECTRONICS CORP. Page No. : 1/5 HSB772S PNP EPITAXIAL PLANAR TRANSISTOR Description The HSB772S is designed for using in output stage of 0.75W amplifier, voltage regulator, DC-DC converter and driver. TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature.....................

5.8. btb772st3.pdf Size:221K _cystek

B772SS
B772SS

Spec. No. : C809T3 Issued Date : 2008.08.01 CYStech Electronics Corp. Revised Date: Page:1/5 Low Vcesat PNP Epitaxial Planar Transistor BTB772ST3 Features • Low VCE(sat), typically -0.45 V at IC / IB = -2A / -0.2A • Excellent current gain characteristics • Pb-free package Symbol Outline BTB772ST3 TO-126 B:Base C:Collector E:Emitter E C B Absolute

5.9. hb772s.pdf Size:27K _shantou-huashan

B772SS

 PN P S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. P HB772S █ AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING TO-92 █ ABSOLUTE MAXIMUM RATINGS(Ta=25℃) Tstg——Storage Temperature⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯ -55~150℃ Tj——Junction Temperature⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯150℃ PC——Collector Dissipation⋯⋯

Otros transistores... MMBT1815 , MMBT9013 , MMBT9014 , MMBT945 , MN2510 , 2SA928A , 2SB772S , 8550S , 2SC945 , HE8551 , MMBT1015 , MMBT9012 , MMBT9015 , MP2510 , MPSA92M , DTA113T , DTA114E .

 


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