MMBT9015 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MMBT9015

Código: 15

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.225 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 45 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 100 MHz

Capacitancia de salida (Cc): 4.5 pF

Ganancia de corriente contínua (hFE): 60

Encapsulados: SOT-23

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MMBT9015 datasheet

 ..1. Size:110K  utc
 mmbt9015.pdf pdf_icon

MMBT9015

UNISONIC TECHNOLOGIES CO., LTD MMBT9015 PNP SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE 3 FEATURES *High total power dissipation. (450mW) 1 *Excellent hFE linearity. 2 *Complementary to UTC MMBT9014 SOT-23 (JEDEC TO-236) ORDERING INFORMATION Pin Assignment Ordering Number Package Packing 1 2 3 MMBT9015G-x-AE3-R SOT-23 E B C Tape Reel Note Pin As

 0.1. Size:243K  semtech
 mmbt9015b mmbt9015c mmbt9015d.pdf pdf_icon

MMBT9015

MMBT9015B / MMBT9015C / MMBT9015D PNP Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. As complementary types the NPN transistor MMBT9014B, MMBT9014C and MMBT9014D are recommended. SOT-23 Plastic Package O Absolute Maximum Ratings (T = 25 C) a Parameter Symbol Value Unit Collector Base Voltage -VCBO 50 V Collector Emitter Voltage -VCEO 45 V

 0.2. Size:135K  wej
 mmbt9015lt1.pdf pdf_icon

MMBT9015

RoHS MMBT9015LT1 PNP EPITAXIAL SILICON TRANSISTOR SOT-23 3 LOW FREQRENCY,LOW NOISE AMPLIFIER 1 Complemen to MMPT9014LT1 Collector-current Ic=-100mA 2 Collector-Emiller Voltage VCE=-45V 1. 1.BASE 2.EMITTER 2.4 3.COLLECTOR 1.3 Unit mm o ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Symbol Rating Unit Characteristic Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage V V

 0.3. Size:507K  pjsemi
 mmbt9015-b mmbt9015-c mmbt9015-d.pdf pdf_icon

MMBT9015

MMBT9015 PNP Transistor Features SOT-23 (TO-236) For Switching and Amplifier Applications. As Complementary Type of the PNP Transistor MMBT9014 is Recommended. 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage -V 50 V CBO Collector Emitter Voltage

MOSTRAR MÁS

Otros transistores... MN2510, 2SA928A, 2SB772S, 8550S, B772SS, HE8551, MMBT1015, MMBT9012, TIP42C, MP2510, MPSA92M, DTA113T, DTA114E, DTA114T, DTA114W, DTA114Y, DTA115E