DTA124E . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DTA124E
Código: AC4E
Material: Si
Polaridad de transistor: Pre-Biased-PNP
Resistencia de Entrada Base R1 = 22 kOhm
Resistencia Base-Emisor R2 = 22 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.625 W
Tensión colector-emisor (Vce): 50 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 250 MHz
Ganancia de corriente contínua (hfe): 56
Paquete / Cubierta: TO-92 SOT-23 SOT-323 SOT-523
Búsqueda de reemplazo de transistor bipolar DTA124E
DTA124E Datasheet (PDF)
dta124e.pdf
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SEMICONDUCTORDTA124ETECHNICAL DATABias Resistor TransistorNPN Silicon Surface Mount Transistorwith Monolithic Bias Resistor NetworkBThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias ResistorKTransistor) contains a single transistor with a monolithic bias networkresistor. The BRT eliminates the
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DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186PDTA124ESPNP resistor-equipped transistor1998 May 20Product specificationSupersedes data of 1997 Jul 04File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA124ESFEATURES Built-in bias resistors R1 and R2(typ. 22 k each) Simplification o
pdta124ee 2.pdf
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DISCRETE SEMICONDUCTORSDATA SHEETok, halfpageM3D088PDTA124ETPNP resistor-equipped transistor1999 Apr 13Product specificationSupersedes data of 1998 May 18Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA124ETFEATURES Built-in bias resistors R1 and R2(typ. 22 k each)3handbook, 4 columns Simplification of circuit design3
pdta124eu 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D102PDTA124EUPNP resistor-equipped transistor1999 Apr 13Product specificationSupersedes data of 1998 May 20Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA124EUFEATURES Built-in bias resistors R1 and R2(typ. 22 k each)3 Simplification of circuit designhandbook, 4 columns
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DISCRETE SEMICONDUCTORS DATA SHEETPDTA124E seriesPNP resistor-equipped transistors; R1 = 22 k, R2 = 22 kProduct data sheet 2004 Aug 02Supersedes data of 2003 Apr 14NXP Semiconductors Product data sheetPNP resistor-equipped transistors; PDTA124E seriesR1 = 22 k, R2 = 22 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNIT
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DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186PDTA124ESPNP resistor-equipped transistor1998 May 20Product specificationSupersedes data of 1997 Jul 04File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA124ESFEATURES Built-in bias resistors R1 and R2(typ. 22 k each) Simplification o
pdta124ee 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTA124EEPNP resistor-equipped transistorProduct specification 1998 Jul 23Supersedes data of 1997 Jul 04File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA124EEFEATURES Built-in bias resistors R1 and R2(typ. 22 k each) Simplification of circuit design
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DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D114PDTA124EKPNP resistor-equipped transistor1998 May 18Product specificationSupersedes data of 1997 Sep 09File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA124EKFEATURES Built-in bias resistors R1 and R2(typ. 22 k each)3 Simplificatio
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