DTC114Y Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DTC114Y 📄📄
Código: CB4Y
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 10 kOhm
Resistencia Base-Emisor R2 = 47 kOhm
Ratio típica de resistencia R1/R2 = 0.21
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.625 W
Tensión colector-emisor (Vce): 50 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 250 MHz
Ganancia de corriente contínua (hFE): 68
Encapsulados: TO-92
TO-92SP
SOT-23
SOT-323
SOT-523
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DTC114Y datasheet
..1. Size:190K utc
dtc114y.pdf 
UNISONIC TECHNOLOGIES CO., LTD DTC114Y NPN SILICON TRANSISTOR NPN DIGITAL TRANSISTOR (BUILT- IN BIAS RESISTORS) FEATURES * Built-in bias resistors that implies easy ON/OFF applications. * The bias resistors are thin-film resistors with complete isolation to allow negative input. EQUIVALENT CIRCUIT ORDERING INFORMATION Ordering Number Pin Assignment Package Pack
..2. Size:223K secos
dtc114y dtc114yca.pdf
DTC114YE / DTC114YUA DTC114YCA / DTC114YSA NPN Digital Transistors (Built-in Resistors) Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES DTC114YE (SOT-523) DTC114YUA (SOT-323) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent cir
..3. Size:130K lge
dtc114y.pdf
DTC114YE/DTC114YUA/DTC114YCA DTC114YKA/DTC114YSA Digital Transistor(NPN) Features 1. Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors(see equivalent circuit). 2. The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost compl
..4. Size:120K first silicon
dtc114y.pdf
SEMICONDUCTOR DTC114Y TECHNICAL DATA Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network B This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor K Transistor) contains a single transistor with a monolithic bias network resistor. The BRT eliminates the
0.1. Size:144K motorola
dtc114yerev1.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by DTC114YE/D DTC114YE Preliminary Data Sheet Bias Resistor Transistor NPN Silicon Surface Mount Transistor with 3 Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a 2 1 monolithic bias network consisting of two resistors; a series base resistor and a base emitter resis
0.2. Size:94K motorola
dtc114ye 69 sot416.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by DTC114YE/D DTC114YE Preliminary Data Sheet Bias Resistor Transistor NPN Silicon Surface Mount Transistor with 3 Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a 2 1 monolithic bias network consisting of two resistors; a series base resistor and a base emitter resis
0.3. Size:56K motorola
pdtc114yt 3.pdf
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTC114YT NPN resistor-equipped transistor 1999 May 21 Product specification Supersedes data of 1998 May 19 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114YT FEATURES Built-in bias resistors R1 and R2 (typ. 10 and 47 k respectively) Simplification of circuit design 3 Re
0.4. Size:59K motorola
pdtc114yu 1.pdf
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 PDTC114YU NPN resistor-equipped transistor 1999 Apr 20 Product specification Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114YU FEATURES Built-in bias resistors R1 and R2 (typ. 10 k and 47 k respectively) 3 handbook, 4 columns 3 Simplification of circuit design R1 R
0.5. Size:56K motorola
pdtc114ye 3.pdf
DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC114YE NPN resistor-equipped transistor 1999 May 18 Product specification Supersedes data of 1998 May 19 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114YE FEATURES PINNING Built-in bias resistors R1 and R2 (typ. 10 k and 47 k PIN DESCRIPTION respectively) 1 base/input Simplification
0.7. Size:56K philips
pdtc114yt 3.pdf
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTC114YT NPN resistor-equipped transistor 1999 May 21 Product specification Supersedes data of 1998 May 19 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114YT FEATURES Built-in bias resistors R1 and R2 (typ. 10 and 47 k respectively) Simplification of circuit design 3 Re
0.8. Size:59K philips
pdtc114yu 1.pdf
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 PDTC114YU NPN resistor-equipped transistor 1999 Apr 20 Product specification Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114YU FEATURES Built-in bias resistors R1 and R2 (typ. 10 k and 47 k respectively) 3 handbook, 4 columns 3 Simplification of circuit design R1 R
0.9. Size:56K philips
pdtc114ye 3.pdf
DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC114YE NPN resistor-equipped transistor 1999 May 18 Product specification Supersedes data of 1998 May 19 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114YE FEATURES PINNING Built-in bias resistors R1 and R2 (typ. 10 k and 47 k PIN DESCRIPTION respectively) 1 base/input Simplification
0.10. Size:1523K rohm
dtc114yefra dtc114ykafra dtc114ymfha dtc114yuafra.pdf
DTC114Y series Datasheet NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors) lOutline l Parameter Value VMT3 EMT3F VCC 50V IC(MAX.) 100mA R1 10k DTC114YM DTC114YEB R2 (SC-105AA) (SC-89) 47k EMT3 UMT3F lFeatures l 1) Built-In Biasing Resistors 2) Built-in bias resistors enable the configuration of DTC114YE DTC114Y
0.11. Size:140K rohm
dtc114y-series dtc114ye.pdf
100mA / 50V Digital transistors (with built-in resistors) DTC114YM / DTC114YE / DTC114YUA / DTC114YKA Applications Inverter, Interface, Driver Features 1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2)The bias resistors consist of thin-film resistors with complete isolation
0.12. Size:152K rohm
dtc114yeb.pdf
100mA / 50V Digital transistors (with built-in resistors) DTC114YEB Applications Dimensions (Unit mm) Inverter, Interface, Driver EMT3F 1.6 0.7 0.26 Features (3) 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors (1) (2) 0
0.13. Size:69K rohm
dtc114ye-yua-yka 64 sot416 323 346.pdf
Transistors Digital transistors (built-in resistors) DTC114YE / DTC114YUA / DTC114YKA DTC114YSA FFeatures FExternal dimensions (Units mm) 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin- film resistors with complete isola- tion to allow negative bias
0.14. Size:137K rohm
dtc114yka.pdf
100mA / 50V Digital transistors (with built-in resistors) DTC114YM / DTC114YE / DTC114YUA / DTC114YKA Applications Inverter, Interface, Driver Features 1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2)The bias resistors consist of thin-film resistors with complete isolation
0.15. Size:82K rohm
dtc114yub.pdf
Transistors DTC114YUB 100mA / 50V Digital transistors (with built-in resistors) DTC114YUB Applications Dimensions (Unit mm) Inverter, Interface, Driver UMT3F 2.0 Features 0.9 0.32 1) Built-in bias resistors enable the configuration of (3) an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-fi
0.16. Size:204K diodes
ddtc114yka.pdf
DDTC (R1 R2 SERIES) KA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction Complementary PNP Types Available (DDTA) A Built-In Biasing Resistors, R1 R2 SC-59 Lead Free/RoHS Compliant (Note 1) Dim Min Max "Green" Device, Note 2 and 3 B C A 0.35 0.50 B 1.50 1.70 Mechanical Data C 2.70 3.00 G Case
0.17. Size:197K diodes
ddtc114ylp.pdf
DDTCxxxxLP (R1 R2 Series) PRE-BIASED SMALL SIGNAL SURFACE MOUNT 100mA NPN TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data Epitaxial Planar Die Construction Case DFN1006-3 Ultra-Small Leadless Surface Mount Package Case Material Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0
0.18. Size:237K diodes
ddtc114ye.pdf
DDTC (R1 R2 SERIES) E NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SOT-523 Complementary PNP Types Available (DDTA) Built-In Biasing Resistors, R1 R2 Dim Min Max Typ Lead Free/RoHS Compliant (Note 2) B C A 0.15 0.30 0.22 TOP VIEW "Green" Device (Note 3 and 4) B 0.75 0.85 0.80 C 1.45 1.75 1.60
0.19. Size:203K diodes
ddtc114yua.pdf
DDTC (R1 R2 SERIES) UA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction SOT-323 A Complementary PNP Types Available (DDTA) Dim Min Max Built-In Biasing Resistors, R1 R2 A 0.25 0.40 Lead Free/RoHS Compliant (Note 1) B 1.15 1.35 B C "Green" Device (Note 2 & 3) C 2.00 2.20 Mechanical Data D 0.65 No
0.20. Size:93K diodes
ddtc114yca.pdf
DDTC (R1 R2 SERIES) CA NPN PRE-BIASED SMALL SIGNAL SOT23 SURFACE MOUNT TRANSISTOR Product Summary Features and Benefits Epitaxial Planar Die Construction Part Number R1 (NOM) R2 (NOM) Complementary PNP Types Available (DDTA) DDTC113ZCA 1K 10K Built-In Biasing Resistors, R1 R2 DDTC123YCA 2.2K 10K Lead Free , RoHS Compliant (Note 1) DDTC123JCA
0.21. Size:197K mcc
dtc114ye.pdf
MCC TM Micro Commercial Components 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone (818) 701-4933 DTC114YE Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Built-in bias resistors enable the
0.22. Size:197K mcc
dtc114yua sot-323.pdf
MCC TM Micro Commercial Components 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone (818) 701-4933 DTC114YUA Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Built-in bias resistors enable th
0.23. Size:144K onsemi
dtc114eet1g dtc114tet1g dtc114yet1g dtc115eet1g dtc123eet1g.pdf
DTC114EET1 Series, SDTC114EET1 Series Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single http //onsemi.com device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two r
0.24. Size:144K onsemi
sdtc114yet1g.pdf
DTC114EET1 Series, SDTC114EET1 Series Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single http //onsemi.com device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two r
0.25. Size:156K onsemi
dtc114ym3.pdf
MUN2214, MMUN2214L, MUN5214, DTC114YE, DTC114YM3, NSBC114YF3 Digital Transistors (BRT) R1 = 10 kW, R2 = 47 kW http //onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (
0.26. Size:135K onsemi
mun2214 mmun2214l mun5214 dtc114ye dtc114ym3 nsbc114yf3.pdf
MUN2214, MMUN2214L, MUN5214, DTC114YE, DTC114YM3, NSBC114YF3 Digital Transistors (BRT) R1 = 10 kW, R2 = 47 kW www.onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (BRT
0.27. Size:156K onsemi
nsvdtc114ym3t5g.pdf
MUN2214, MMUN2214L, MUN5214, DTC114YE, DTC114YM3, NSBC114YF3 Digital Transistors (BRT) R1 = 10 kW, R2 = 47 kW http //onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (
0.28. Size:82K onsemi
dtc114em3t5g dtc114tm3t5g dtc114ym3t5g dtc123em3t5g.pdf
DTC114EM3T5G Series Digital Transistors (BRT) NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The digital transistor http //onsemi.com contains a single transistor with a monolithic bias network consisting of two resistors; a series base resis
0.29. Size:326K htsemi
dtc114yca dtc114ye dtc114yka dtc114ysa dtc114yua.pdf
DTC114YE/DTC114YUA /DTC114YKA/DTC114YSA/DTC114YCA DIGITAL TRANSISTOR (NPN) FEATURES 1. Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors(see equivalent circuit). 2. The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost c
0.30. Size:286K willas
dtc114yua.pdf
FM120-M WILLAS DTC114YUATHRU NPN Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produc Package outline Fea Batch process design, excellent power dissipation offers Featurestures better reverse leakage current and thermal resistance. SOD-123H SOT-323 Low profile surface mounted application in order
0.31. Size:293K willas
dtc114ye.pdf
FM120-M WILLAS THRU DTC114YE NPN Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produc Package outline Fe Batch process design, excellent power dissipation offers Featuresatures better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to SOT-5
0.32. Size:302K willas
dtc114yca.pdf
FM120-M WILLAS THRU DTC114YCA NPN Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produc Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to SOT-23 optimize
0.33. Size:322K cystek
dtc114yc3.pdf
Spec. No. C355C3 Issued Date 2010.07.23 CYStech Electronics Corp. Revised Date 2011.11.03 Page No. 1/6 NPN Digital Transistors (Built-in Resistors) DTC114YC3 Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). The bias resistors consist of thin-film resistors wi
0.34. Size:146K cystek
dtc114yn3.pdf
Spec. No. C355N3 Issued Date 2002.06.01 CYStech Electronics Corp. Revised Date 2002.11.04 Page No. 1/4 General Purpose NPN Digital Transistors (Built-in Resistors) DTC114YN3 Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). The bias resistors consist of thin-f
0.35. Size:348K cystek
dtc114ys3.pdf
Spec. No. C355S3 Issued Date 2002.06.01 CYStech Electronics Corp. Revised Date 2015.03.04 Page No. 1/6 NPN Digital Transistors (Built-in Resistors) DTC114YS3 Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). The bias resistors consist of thin-film resistors w
0.37. Size:545K lrc
ldtc114em3t5g ldtc124em3t5g ldtc144em3t5g ldtc114ym3t5g ldtc114tm3t5g ldtc143tm3t5g ldtc123em3t5g.pdf
LESHAN RADIO COMPANY, LTD. Bias Resistor Transistors NPN Silicon Surface Mount Transistors Series LDTC114EM3T5G LDTC114EM3T5G S-LDTC114EM3T5G Series With Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic
0.38. Size:70K chenmko
chdtc114ykgp.pdf
CHENMKO ENTERPRISE CO.,LTD CHDTC114YKGP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 70 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SOT-23) SOT-23 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capabili
0.39. Size:108K chenmko
chdtc114yugp.pdf
CHENMKO ENTERPRISE CO.,LTD CHDTC114YUGP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 70 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SC-70/SOT-323) SC-70/SOT-323 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation cu
0.40. Size:96K chenmko
chdtc114yegp.pdf
CHENMKO ENTERPRISE CO.,LTD CHDTC114YEGP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 70 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SC-75/SOT-416) SC-75/SOT-416 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation cu
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