BCP53L3 Todos los transistores

Spec. No. C824L3 Issued Date 2007.03.29 CYStech Electronics Corp. Revised Date 2010.09.06 Page No. 1/7 General Purpose PNP Epitaxial Planar Transistor BCP53L3 Description General purpose mainly intended for use in medium power industrial application and for audio amplifier output stage. Features High collector current and low V CE(SAT) Complement to BCP56

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BCP53T1/D PNP Silicon BCP53T1 Motorola Preferred Device Epitaxial Transistor This PNP Silicon Epitaxial transistor is designed for use in audio amplifier MEDIUM POWER applications. The device is housed in the SOT-223 package which is designed for PNP SILICON medium power surface mount applications. HIGH CURRENT High C

BC640; BCP53; BCX53 80 V, 1 A PNP medium power transistors Rev. 08 22 February 2008 Product data sheet 1. Product profile 1.1 General description PNP medium power transistor series. Table 1. Product overview Type number[1] Package NPN complement NXP JEITA JEDEC BC640[2] SOT54 SC-43A TO-92 BC639 BCP53 SOT223 SC-73 - BCP56 BCX53 SOT89 SC-62 TO-243 BCX56 [1] Valid for all available

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D087 BCP51; BCP52; BCP53 PNP medium power transistors 1999 Apr 08 Product specification Supersedes data of 1997 Apr 08 Philips Semiconductors Product specification PNP medium power transistors BCP51; BCP52; BCP53 FEATURES PINNING High current (max. 1 A) PIN DESCRIPTION Low voltage (max. 80 V) 1 base Medium power (m

BCP53-16 LOW POWER PNP TRANSISTOR Ordering Code Marking BCP53-16 BCP5316 SILICON EPITAXIAL PLANAR PNP MEDIUM VOLTAGE TRANSISTOR SOT-223 PLASTIC PACKAGE FOR 2 SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING 3 THE NPN COMPLEMENTARY TYPE IS 2 BCP56-16 1 APPLICATIONS SOT-223 MEDIUM VOLTAGE LOAD SWITCH TRANSISTORS OUTPUT STAGE FOR AUDIO AMPLIFIERS CIRCUITS AUTOMOTIVE

BCP52/53 MEDIUM POWER AMPLIFIER ADVANCE DATA SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS GENERAL PURPOSE MAINLY INTENDED 2 FOR USE IN MEDIUM POWER INDUSTRIAL APPLICATION AND FOR AUDIO AMPLIFIER 3 OUTPUT STAGE 2 NPN COMPLEMENTS ARE BCP55 AND 1 BCP56 RESPECTIVELY SOT-223 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE

BCP53 C E C B SOT-223 PNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switching circuits requiring collector currents to 1.0 A. Sourced from Process 78. See BCP52 for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units V Collector-Emitter Voltage 80 V CEO V Collector-Base Vo

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

BCP53H series 80 V, 1 A PNP medium power transistors Rev. 1 21 July 2017 Product data sheet 1. Product profile 1.1 General description PNP medium power transistors in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package NPN complement Nexperia JEITA JEDEC BCP53H SOT223 SC-73 - BCP56H BCP53-10H BCP56-10H BCP53-

BC640; BCP53; BCX53 80 V, 1 A PNP medium power transistors Rev. 08 22 February 2008 Product data sheet 1. Product profile 1.1 General description PNP medium power transistor series. Table 1. Product overview Type number[1] Package NPN complement NXP JEITA JEDEC BC640[2] SOT54 SC-43A TO-92 BC639 BCP53 SOT223 SC-73 - BCP56 BCX53 SOT89 SC-62 TO-243 BCX56 [1] Valid for all available

BCP53; BCX53; BC53PA 80 V, 1 A PNP medium power transistors Rev. 9 19 October 2011 Product data sheet 1. Product profile 1.1 General description PNP medium power transistor series in Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number[1] Package NPN complement Nexperia JEITA JEDEC BCP53 SOT223 SC-73 - BCP56 BCX53 SOT89 SC-62 TO-243 BCX56 BC53PA SO

BCP53T series 80 V, 1 A PNP medium power transistors Rev. 2 29 April 2019 Product data sheet 1. Product profile 1.1. General description PNP medium power transistors in a medium power SOT223 (SC73) Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package NPN comlement Nexperia JEDEC BCP53T SOT223 SC-73 BCP56T BCP53-10T BCP56-10T BCP53-16T BCP56

PNP Silicon AF Transistors BCP 51 ... BCP 53 For AF driver and output stages High collector current Low collector-emitter saturation voltage Complementary types BCP 54 BCP 56 (NPN) Type Marking Ordering Code Pin Configuration Package1) (tape and reel) 1 2 3 4 BCP 51 BCP 51 Q62702-C2107 B C E C SOT-223 BCP 51-10 BCP 51-10 Q62702-C2109 BCP 51-16 BCP 51-16 Q62702-C2110 BCP 52

BCP 51M ... BCP 53M PNP Silicon AF Transistor 4 For AF driver and output stages 5 High collector current Low collector-emitter saturation voltage 3 Complementary types BCP 54M...BCP 56M(NPN) 2 1 VPW05980 Type Marking Ordering Code Pin Configuration Package BCP 51M AAs Q62702-C2592 1 = B 2 = C 3 = E 4 n.c. 5 = C SCT-595 BCP 52M AEs Q62702-C2593 BCP 53M AHs Q62702

BCP5316Q 80V PNP MEDIUM POWER TRANSISTOR IN SOT223 Description Applications This Bipolar Junction Transistor (BJT) has been designed to meet the Medium Power Switching or Amplification Applications stringent requirements of automotive applications. AF Driver and Output Stages Features Mechanical Data BVCEO > -80V Case SOT223 IC = -1A High Continuous Collector

SOT223 PNP SILICON PLANAR BCP53 MEDIUM POWER TRANSISTOR ISSUE 3 AUGUST 1995 T i I i C i II V T T E C T I D T I B ABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V 8 V i V I V V I I i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25 C unless otherwise stated). T I T IT DITI II V V I V I II i V 8 V I V I

BCP 51/ 52/ 53 PNP MEDIUM POWER TRANSISTORS IN SOT223 Features Mechanical Data BVCEO > -45V, -60V & -80V Case SOT223 IC = -1A High Continuous Collector Current Case Material Molded Plastic. Green Molding Compound; ICM = -2A Peak Pulse Current UL Flammability Rating 94V-0 2W Power Dissipation Moisture Sensitivity Level 1 per J-STD-020 Low Sa

BCP53-10,BCP53-16 Features Complementary Types BCP56 (NPN) Halogen Free Available Upon Request By Adding Suffix "-HF" PNP Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating Plastic-Encapsulate Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Transistors Maximum Ratings @ 25 C Unless Otherwise

BCP53 Series PNP Silicon Epitaxial Transistors This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. http //onsemi.com High Current NPN Complement is BCP56 MEDIUM POWER HIGH The SOT-223 Package can be soldered using wave or reflow

BCP53 Series PNP Silicon Epitaxial Transistors This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. http //onsemi.com High Current NPN Complement is BCP56 MEDIUM POWER HIGH The SOT-223 Package can be soldered using wave or reflow

BCP53 Series PNP Silicon Epitaxial Transistors This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. http //onsemi.com High Current 1.5 A NPN Complement is BCP56 MEDIUM POWER HIGH The SOT-223 Package can be soldered using wave or

BCP53 Series, SBCP53 Series PNP Silicon Epitaxial Transistors This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT-223 package http //onsemi.com which is designed for medium power surface mount applications. MEDIUM POWER HIGH High Current 1.5 A CURRENT SURFACE MOUNT NPN Complement is BCP56 PNP TRANSISTOR

BCP53 Series PNP Silicon Epitaxial Transistors This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. www.onsemi.com High Current NPN Complement is BCP56 MEDIUM POWER HIGH The SOT-223 Package can be soldered using wave or reflow.

BCP53 Series, SBCP53 Series PNP Silicon Epitaxial Transistors This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT-223 package http //onsemi.com which is designed for medium power surface mount applications. MEDIUM POWER HIGH High Current 1.5 A CURRENT SURFACE MOUNT NPN Complement is BCP56 PNP TRANSISTOR

BCP53 Series PNP Silicon Epitaxial Transistors This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. www.onsemi.com High Current NPN Complement is BCP56 MEDIUM POWER HIGH The SOT-223 Package can be soldered using wave or reflow.

BCP53 Series PNP Silicon Epitaxial Transistors This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. www.onsemi.com High Current NPN Complement is BCP56 MEDIUM POWER HIGH The SOT-223 Package can be soldered using wave or reflow.

BCP53 -1A , -100V PNP Silicon Medium Power Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES SOT-223 Collector-Emitter Voltage VCEO= -80V Complementary types BCP56 (NPN) A M CLASSIFICATION OF hFE (2) 4 Product-Rank BCP53-10 BCP53-16 Top View C B 1 2 Range 63 160 100 250 3 K L E PACK

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS BCP51 BCP52 BCP53 SOT-223 Formed SMD Package General Purpose Medium Power DC Applications Complementary BCP54 BCP55 and BCP56 ABSOLUTE MAXIMUM RATINGS (Ta=25 C unless specified otherwise) DESCRIPTION SYMBOL BCP51 BCP52 BCP53 UNITS Collector Base Voltage V

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate Transistors BCP51,52,53 TRANSISTOR (PNP) SOT-223 FEATURES For AF driver and output stages 1. BASE High collector current 2. COLLECTOR Low collector-emitter saturation voltage 3. EMITTER Complementary types BCP54...BCP56 (NPN) MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol

BCP51,52,53 SOT-223 Transistor(PNP) SOT-223 1. BASE 2. COLLECTOR 1 3. EMITTER Features For AF driver and output stages High collector current Low collector-emitter saturation voltage Complementary types BCP54...BCP56 (NPN) MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter BCP51 BCP52 BCP53 Units VCBO

BCP53 PNP Silicon Planar Epitaxial Transistor 4 1. BASE COLLECTOR 2.COLLECTOR 2, 4 P b Lead(Pb)-Free 3.EMITTER 4.COLLECTOR 1 2 3 1 BASE SOT-223 3 EMITTER ABSOLUTE MAXIMUM RATINGS (TA=25 C) Symbol Rating Value Unit V Collector-Emitter Voltage CEO V -80 VCBO Collector-Base Voltage -100 V VEBO Emitter-Base Voltage -5 V IC(DC) Collector Current (DC) 1 A PD Total Dev

SEMICONDUCTOR BCP53 TECHNICAL DATA BCP51,52,53 TRANSISTOR (PNP) SOT-223 FEATURES For AF driver and output stages 1. BASE High collector current 2. COLLECTOR Low collector-emitter saturation voltage 3. EMITTER Complementary types BCP54...BCP56 (NPN) MAXIMUM RA TINGS (Ta=25 unless other wise noted) Symbol Para meter BCP51 BCP52 BCP53 Unit VCBO Collector-Base Vol

SMD Type Transistors PNP Transistors BCP51,BCP52,BCP53 (KCP51,KCP52,KCP53) Unit mm SOT-223 6.50 0.2 Features 3.00 0.1 For AF driver and output stages 4 High collector current Low collector-emitter saturation voltage Complementary to BCP54,BCP55,BCP56 1 2 3 0.250 2.30 (typ) Gauge Plane 1.Base 2.Collector 0.70 0.1 3.Emitter 4.60 (typ) 4.Collecto

BCP51-BCP53 TRANSISTOR (PNP) SOT-223 FEATURES For AF driver and output stages 1 High collector current Low collector-emitter saturation voltage 1. BASE Complementary types BCP54...BCP56 (NPN) 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter BCP51 BCP52 BCP53 Units VCBO Collector-Base Voltage -45 -60 -100 V VCEO Collect

www.msksemi.com BCP51 BCP52 BCP53 Semiconductor Compiance Semiconductor Compiance BCP51,52,53 TRANSISTOR (PNP) SOT-223 FEATURES 1 For AF driver and output stages 1. BASE High collector current 2 2. COLLECTOR Low collector-emitter saturation voltage 3 3. EMITTER Complementary types BCP54...BCP56 (NPN) MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol