BCP53L3 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Spec. No. : C824L3 Issued Date : 2007.03.29 CYStech Electronics Corp.Revised Date : 2010.09.06 Page No. : 1/7 General Purpose PNP Epitaxial Planar Transistor BCP53L3Description General purpose mainly intended for use in medium power industrial application and for audio amplifier output stage. Features High collector current and low V CE(SAT) Complement to BCP56

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BCP53T1/DPNP Silicon BCP53T1Motorola Preferred DeviceEpitaxial TransistorThis PNP Silicon Epitaxial transistor is designed for use in audio amplifierMEDIUM POWERapplications. The device is housed in the SOT-223 package which is designed forPNP SILICONmedium power surface mount applications.HIGH CURRENT High C

BC640; BCP53; BCX5380 V, 1 A PNP medium power transistorsRev. 08 22 February 2008 Product data sheet1. Product profile1.1 General descriptionPNP medium power transistor series.Table 1. Product overviewType number[1] Package NPN complementNXP JEITA JEDECBC640[2] SOT54 SC-43A TO-92 BC639BCP53 SOT223 SC-73 - BCP56BCX53 SOT89 SC-62 TO-243 BCX56[1] Valid for all available

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D087BCP51; BCP52; BCP53PNP medium power transistors1999 Apr 08Product specificationSupersedes data of 1997 Apr 08Philips Semiconductors Product specificationPNP medium power transistors BCP51; BCP52; BCP53FEATURES PINNING High current (max. 1 A)PIN DESCRIPTION Low voltage (max. 80 V)1 base Medium power (m

BCP53-16LOW POWER PNP TRANSISTOROrdering Code MarkingBCP53-16 BCP5316 SILICON EPITAXIAL PLANAR PNP MEDIUMVOLTAGE TRANSISTOR SOT-223 PLASTIC PACKAGE FOR2SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING3 THE NPN COMPLEMENTARY TYPE IS2BCP56-161APPLICATIONS SOT-223 MEDIUM VOLTAGE LOAD SWITCHTRANSISTORS OUTPUT STAGE FOR AUDIO AMPLIFIERSCIRCUITS AUTOMOTIVE

BCP52/53MEDIUM POWER AMPLIFIERADVANCE DATA SILICON EPITAXIAL PLANAR PNPTRANSISTORS MINIATURE PLASTIC PACKAGE FORAPPLICATION IN SURFACE MOUNTINGCIRCUITS GENERAL PURPOSE MAINLY INTENDED2FOR USE IN MEDIUM POWER INDUSTRIALAPPLICATION AND FOR AUDIO AMPLIFIER3OUTPUT STAGE2 NPN COMPLEMENTS ARE BCP55 AND1BCP56 RESPECTIVELYSOT-223INTERNAL SCHEMATIC DIAGRAMABSOLUTE

BCP53CECBSOT-223PNP General Purpose AmplifierThis device is designed for general purpose medium poweramplifiers and switching circuits requiring collector currentsto 1.0 A. Sourced from Process 78. See BCP52 for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsV Collector-Emitter Voltage 80 VCEOV Collector-Base Vo

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

BCP53H series80 V, 1 A PNP medium power transistorsRev. 1 21 July 2017 Product data sheet1. Product profile1.1 General descriptionPNP medium power transistors in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.Table 1. Product overviewType number Package NPN complementNexperia JEITA JEDECBCP53H SOT223 SC-73 - BCP56HBCP53-10H BCP56-10HBCP53-

BC640; BCP53; BCX5380 V, 1 A PNP medium power transistorsRev. 08 22 February 2008 Product data sheet1. Product profile1.1 General descriptionPNP medium power transistor series.Table 1. Product overviewType number[1] Package NPN complementNXP JEITA JEDECBC640[2] SOT54 SC-43A TO-92 BC639BCP53 SOT223 SC-73 - BCP56BCX53 SOT89 SC-62 TO-243 BCX56[1] Valid for all available

BCP53; BCX53; BC53PA80 V, 1 A PNP medium power transistorsRev. 9 19 October 2011 Product data sheet1. Product profile1.1 General descriptionPNP medium power transistor series in Surface-Mounted Device (SMD) plastic packages.Table 1. Product overviewType number[1] Package NPN complementNexperia JEITA JEDECBCP53 SOT223 SC-73 - BCP56BCX53 SOT89 SC-62 TO-243 BCX56BC53PA SO

BCP53T series80 V, 1 A PNP medium power transistorsRev. 2 29 April 2019 Product data sheet1. Product profile1.1. General descriptionPNP medium power transistors in a medium power SOT223 (SC73) Surface-Mounted Device(SMD) plastic package.Table 1. Product overviewType number Package NPN comlementNexperia JEDECBCP53T SOT223 SC-73 BCP56TBCP53-10T BCP56-10TBCP53-16T BCP56

PNP Silicon AF Transistors BCP 51 ... BCP 53 For AF driver and output stages High collector current Low collector-emitter saturation voltage Complementary types: BCP 54 BCP 56 (NPN)Type Marking Ordering Code Pin Configuration Package1)(tape and reel) 1 2 3 4BCP 51 BCP 51 Q62702-C2107 B C E C SOT-223BCP 51-10 BCP 51-10 Q62702-C2109BCP 51-16 BCP 51-16 Q62702-C2110BCP 52

BCP 51M ... BCP 53MPNP Silicon AF Transistor4 For AF driver and output stages5 High collector current Low collector-emitter saturation voltage3 Complementary types: BCP 54M...BCP 56M(NPN)21VPW05980Type Marking Ordering Code Pin Configuration PackageBCP 51M AAs Q62702-C2592 1 = B 2 = C 3 = E 4 n.c. 5 = C SCT-595BCP 52M AEs Q62702-C2593 BCP 53M AHs Q62702

BCP5316Q 80V PNP MEDIUM POWER TRANSISTOR IN SOT223 Description Applications This Bipolar Junction Transistor (BJT) has been designed to meet the Medium Power Switching or Amplification Applications stringent requirements of automotive applications. AF Driver and Output Stages Features Mechanical Data BVCEO > -80V Case: SOT223 IC = -1A High Continuous Collector

SOT223 PNP SILICON PLANARBCP53MEDIUM POWER TRANSISTORISSUE 3 AUGUST 1995 T i I i C i II V T T EC T I D T I BABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V 8 V i V I V V I I i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T I T IT DITI II V V I V I II i V 8 V I V I

BCP 51/ 52/ 53 PNP MEDIUM POWER TRANSISTORS IN SOT223 Features Mechanical Data BVCEO > -45V, -60V & -80V Case: SOT223 IC = -1A High Continuous Collector Current Case Material: Molded Plastic. Green Molding Compound; ICM = -2A Peak Pulse Current UL Flammability Rating 94V-0 2W Power Dissipation Moisture Sensitivity: Level 1 per J-STD-020 Low Sa

BCP53-10,BCP53-16Features Complementary Types: BCP56 (NPN) Halogen Free Available Upon Request By Adding Suffix "-HF"PNP Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability RatingPlastic-Encapsulate Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Information)TransistorsMaximum Ratings @ 25C Unless Otherwise

BCP53 SeriesPNP SiliconEpitaxial TransistorsThis PNP Silicon Epitaxial transistor is designed for use in audioamplifier applications. The device is housed in the SOT-223 packagewhich is designed for medium power surface mount applications.http://onsemi.com High Current NPN Complement is BCP56MEDIUM POWER HIGH The SOT-223 Package can be soldered using wave or reflow

BCP53 SeriesPNP SiliconEpitaxial TransistorsThis PNP Silicon Epitaxial transistor is designed for use in audioamplifier applications. The device is housed in the SOT-223 packagewhich is designed for medium power surface mount applications.http://onsemi.com High Current NPN Complement is BCP56MEDIUM POWER HIGH The SOT-223 Package can be soldered using wave or reflow

BCP53 SeriesPNP SiliconEpitaxial TransistorsThis PNP Silicon Epitaxial transistor is designed for use in audioamplifier applications. The device is housed in the SOT-223 packagewhich is designed for medium power surface mount applications.http://onsemi.com High Current: 1.5 A NPN Complement is BCP56 MEDIUM POWER HIGH The SOT-223 Package can be soldered using wave or

BCP53 Series,SBCP53 SeriesPNP SiliconEpitaxial TransistorsThis PNP Silicon Epitaxial transistor is designed for use in audioamplifier applications. The device is housed in the SOT-223 packagehttp://onsemi.comwhich is designed for medium power surface mount applications.MEDIUM POWER HIGH High Current: 1.5 ACURRENT SURFACE MOUNT NPN Complement is BCP56PNP TRANSISTOR

BCP53 SeriesPNP SiliconEpitaxial TransistorsThis PNP Silicon Epitaxial transistor is designed for use in audioamplifier applications. The device is housed in the SOT-223 packagewhich is designed for medium power surface mount applications.www.onsemi.com High Current NPN Complement is BCP56MEDIUM POWER HIGH The SOT-223 Package can be soldered using wave or reflow.

BCP53 Series,SBCP53 SeriesPNP SiliconEpitaxial TransistorsThis PNP Silicon Epitaxial transistor is designed for use in audioamplifier applications. The device is housed in the SOT-223 packagehttp://onsemi.comwhich is designed for medium power surface mount applications.MEDIUM POWER HIGH High Current: 1.5 ACURRENT SURFACE MOUNT NPN Complement is BCP56PNP TRANSISTOR

BCP53 SeriesPNP SiliconEpitaxial TransistorsThis PNP Silicon Epitaxial transistor is designed for use in audioamplifier applications. The device is housed in the SOT-223 packagewhich is designed for medium power surface mount applications.www.onsemi.com High Current NPN Complement is BCP56MEDIUM POWER HIGH The SOT-223 Package can be soldered using wave or reflow.

BCP53 SeriesPNP SiliconEpitaxial TransistorsThis PNP Silicon Epitaxial transistor is designed for use in audioamplifier applications. The device is housed in the SOT-223 packagewhich is designed for medium power surface mount applications.www.onsemi.com High Current NPN Complement is BCP56MEDIUM POWER HIGH The SOT-223 Package can be soldered using wave or reflow.

BCP53 -1A , -100V PNP Silicon Medium Power Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES SOT-223 Collector-Emitter Voltage:VCEO= -80V Complementary types: BCP56 (NPN) AMCLASSIFICATION OF hFE (2) 4Product-Rank BCP53-10 BCP53-16 Top ViewC B12Range 63~160 100~2503K LEPACK

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP SILICON PLANAR EPITAXIAL TRANSISTORS BCP51 BCP52 BCP53SOT-223Formed SMD PackageGeneral Purpose Medium Power DC ApplicationsComplementary BCP54 BCP55 and BCP56ABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL BCP51 BCP52 BCP53 UNITSCollector Base Voltage V

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate Transistors BCP51,52,53 TRANSISTOR (PNP) SOT-223 FEATURES For AF driver and output stages 1. BASE High collector current 2. COLLECTOR Low collector-emitter saturation voltage 3. EMITTER Complementary types: BCP54...BCP56 (NPN) MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol

BCP51,52,53SOT-223 Transistor(PNP)SOT-2231. BASE 2. COLLECTOR 1 3. EMITTER Features For AF driver and output stages High collector current Low collector-emitter saturation voltage Complementary types: BCP54...BCP56 (NPN) MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Parameter BCP51 BCP52 BCP53 Units VCBO

BCP53PNP Silicon Planar Epitaxial Transistor41. BASECOLLECTOR 2.COLLECTOR 2, 4P b Lead(Pb)-Free3.EMITTER4.COLLECTOR 1231BASESOT-2233EMITTERABSOLUTE MAXIMUM RATINGS (TA=25C)SymbolRating Value UnitVCollector-Emitter Voltage CEO V-80VCBOCollector-Base Voltage -100 VVEBOEmitter-Base Voltage -5 VIC(DC)Collector Current (DC) 1 APDTotal Dev

SEMICONDUCTORBCP53TECHNICAL DATABCP51,52,53 TRANSISTOR (PNP) SOT-223 FEATURES For AF driver and output stages 1. BASE High collector current 2. COLLECTOR Low collector-emitter saturation voltage 3. EMITTER Complementary types: BCP54...BCP56 (NPN) MAXIMUM RA TINGS (Ta=25 unless other wise noted) Symbol Para meter BCP51 BCP52 BCP53 UnitVCBO Collector-Base Vol

SMD Type TransistorsPNP TransistorsBCP51,BCP52,BCP53(KCP51,KCP52,KCP53)Unit:mmSOT-2236.500.2 Features3.000.1 For AF driver and output stages4 High collector current Low collector-emitter saturation voltage Complementary to BCP54,BCP55,BCP561 2 30.2502.30 (typ)Gauge Plane1.Base 2.Collector0.700.13.Emitter4.60 (typ) 4.Collecto

BCP51-BCP53 TRANSISTOR (PNP) SOT-223 FEATURES For AF driver and output stages 1 High collector current Low collector-emitter saturation voltage 1. BASE Complementary types: BCP54...BCP56 (NPN)2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter BCP51 BCP52 BCP53 Units VCBO Collector-Base Voltage -45 -60 -100 V VCEO Collect

www.msksemi.comBCP51 BCP52 BCP53Semiconductor CompianceSemiconductor Compiance BCP51,52,53 TRANSISTOR (PNP) SOT-223 FEATURES 1 For AF driver and output stages 1. BASE High collector current 22. COLLECTOR Low collector-emitter saturation voltage 33. EMITTER Complementary types: BCP54...BCP56 (NPN) MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol