BTA1640J3 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Spec. No. : C657J3 Issued Date : 2007.04.04 CYStech Electronics Corp.Revised Date :2014.05.23 Page No. : 1/6 PNP Epitaxial Planar Power Transistor BVCEO -50VIC -7ABTA1640J3 RCESAT 70m Features Low collector-emitter saturation voltage, VCE(sat) = -0.4V(max) @ IC = -3A, IB=-0.15A Excellent current gain linearity RoHS compliant and halogen-free package Sy

Spec. No. : C657F3 Issued Date : 2010.09.21 CYStech Electronics Corp.Revised Date : Page No. : 1/6 PNP Epitaxial Planar Power Transistor BVCEO -30VIC -7ABTA1640F3 VCE(SAT) -0.4V(max) Features Low collector-emitter saturation voltage, VCE(sat) = -0.4V(max) @ IC = -3A, IB=-0.1A Excellent current gain linearity Pb-free lead plating package Symbol Outline

Spec. No. : C657T3 Issued Date : 2011.02.23 CYStech Electronics Corp.Revised Date :2012.06.14 Page No. : 1/5 PNP Epitaxial Planar Power Transistor BVCEO -30VIC -7ABTA1640T3 RCESAT 70m(typ.) Features Low collector-emitter saturation voltage, VCE(sat) = -0.4V(max) @ IC = -3A, IB=-0.1A. Excellent current gain linearity. RoHS compliant package. Symbol Outl

Spec. No. : C657FP Issued Date : 2004.09.01 CYStech Electronics Corp.Revised Date :2009.09.16 Page No. : 1/4 PNP Epitaxial Planar Power Transistor BTA1640FP Features Low collector-emitter saturation voltage, VCE(sat) = -0.4V(max) @ IC = -3A, IB=-0.1A Excellent current gain linearity Pb-free package Symbol Outline TO-220FP BTA1640FPBBase CCollecto

Spec. No. : C657I3 Issued Date : 2007.04.04 CYStech Electronics Corp.Revised Date :2010.03.23 Page No. : 1/5 PNP Epitaxial Planar Power Transistor BVCEO -30VIC -7ABTA1640I3 RCESAT 70m Features Low collector-emitter saturation voltage, VCE(sat) = -0.4V(max) @ IC = -3A, IB=-0.15A Excellent current gain linearity RoHS compliant package Symbol Outline TO