BTA1664L3 Todos los transistores

Spec. No. C315L3 Issued Date 2008.03.14 CYStech Electronics Corp. Revised Date 2011.09.06 Page No. 1/6 Low Vcesat PNP Epitaxial Planar Transistor BTA1664L3 Features Low VCE(sat), VCE(sat)=-0.24V (typical), at IC / IB =- 500mA /- 20mA Pb-free lead plating and halogen-free package Symbol Outline BTA1664L3 SOT-223 C E B Base C C Collector B E Em

Spec. No. C315M3 Issued Date 2005.01.25 CYStech Electronics Corp. Revised Date 2014.02.14 Page No. 1/7 Low Vcesat PNP Epitaxial Planar Transistor BTA1664M3 Features Low VCE(sat), VCE(sat)=-0.24V (typical), at IC / IB =- 500mA /- 20mA Pb-free lead plating and halogen-free package Symbol Outline BTA1664M3 SOT-89 B Base B C E C Collector E Emitte

BTA/BTB16 and T16 Series SNUBBERLESS , LOGIC LEVEL & STANDARD 16A TRIACS MAIN FEATURES A2 Symbol Value Unit G IT(RMS) 16 A A1 VDRM/VRRM 600, 700 and 800 V A2 IGT (Q1) 10 to 50 mA A1 A2 DESCRIPTION G Available either in through-hole or surface-mount packages, the BTA/BTB16 and T16 triac series is D2PAK (T16-G) suitable for general purpose AC switching. They A2 can

Spec. No. C657F3 Issued Date 2010.09.21 CYStech Electronics Corp. Revised Date Page No. 1/6 PNP Epitaxial Planar Power Transistor BVCEO -30V IC -7A BTA1640F3 VCE(SAT) -0.4V(max) Features Low collector-emitter saturation voltage, VCE(sat) = -0.4V(max) @ IC = -3A, IB=-0.1A Excellent current gain linearity Pb-free lead plating package Symbol Outline

Spec. No. C657T3 Issued Date 2011.02.23 CYStech Electronics Corp. Revised Date 2012.06.14 Page No. 1/5 PNP Epitaxial Planar Power Transistor BVCEO -30V IC -7A BTA1640T3 RCESAT 70m (typ.) Features Low collector-emitter saturation voltage, VCE(sat) = -0.4V(max) @ IC = -3A, IB=-0.1A. Excellent current gain linearity. RoHS compliant package. Symbol Outl

Spec. No. C657FP Issued Date 2004.09.01 CYStech Electronics Corp. Revised Date 2009.09.16 Page No. 1/4 PNP Epitaxial Planar Power Transistor BTA1640FP Features Low collector-emitter saturation voltage, VCE(sat) = -0.4V(max) @ IC = -3A, IB=-0.1A Excellent current gain linearity Pb-free package Symbol Outline TO-220FP BTA1640FP B Base C Collecto

Spec. No. C657J3 Issued Date 2007.04.04 CYStech Electronics Corp. Revised Date 2014.05.23 Page No. 1/6 PNP Epitaxial Planar Power Transistor BVCEO -50V IC -7A BTA1640J3 RCESAT 70m Features Low collector-emitter saturation voltage, VCE(sat) = -0.4V(max) @ IC = -3A, IB=-0.15A Excellent current gain linearity RoHS compliant and halogen-free package Sy

Spec. No. C657I3 Issued Date 2007.04.04 CYStech Electronics Corp. Revised Date 2010.03.23 Page No. 1/5 PNP Epitaxial Planar Power Transistor BVCEO -30V IC -7A BTA1640I3 RCESAT 70m Features Low collector-emitter saturation voltage, VCE(sat) = -0.4V(max) @ IC = -3A, IB=-0.15A Excellent current gain linearity RoHS compliant package Symbol Outline TO

001 VBTA161K www.VBsemi.com N-Channel 60V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (mA) Definition 1.2 at VGS = 10 V 60 330 Low On-Resistance 2 Low Threshold 2 V (typ.) Low Input Capacitance 25 pF SOT-523 Fast Switching Speed 25 ns SC-75 Low Input and Output Leakage TrenchFET Pow