BTA1774C3 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BTA1774C3
Código: FR
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 0.15 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 140 MHz
Capacitancia de salida (Cc): 4 pF
Ganancia de corriente contínua (hfe): 180
Paquete / Cubierta: SOT523
Búsqueda de reemplazo de transistor bipolar BTA1774C3
BTA1774C3 Datasheet (PDF)
bta1774c3.pdf
Spec. No. : C306C3 Issued Date : 2004.03.03 CYStech Electronics Corp.Revised Date : 2014.03.11 Page No. : 1/8 General Purpose PNP Epitaxial Planar Transistor BTA1774C3Description The BTA1774C3 is designed for use in driver stage of AF amplifier and general purpose amplification. High HFE and excellent linearity Complementary to BTC4617C3. Pb-free lead pla
bta1759n3.pdf
Spec. No. : C309N3 Issued Date : 2003.05.09 CYStech Electronics Corp.Revised Date : 2010.10.19 Page No. : 1/6 High Voltage PNP Epitaxial Planar Transistor BVCEO -400VBTA1759N3IC -0.3AVCESAT(TYP) -0.08VDescription High breakdown voltage. (BV =-400V) CEO Low saturation voltage, typical V =-0.2V at Ic/I =-20mA/-2mA. CE(sat) B Wide SOA (safe operation area).
bta1797m3.pdf
Spec. No. : C623M3 Issued Date : 2013.03.19 CYStech Electronics Corp.Revised Date : 2013.08.12 Page No. : 1/8 Silicon PNP Epitaxial Planar Transistor BVCEO -50VIC -2ABTA1797M3VCESAT(Max) -0.2VDescription Low saturation voltage, V = -0.2V(max.) at I /I =-1A/-50mA. CE(SAT) C B High current capability. Excellent DC current gain characteristics. Pb-free
bta1759a3.pdf
Spec. No. : C309A3-R Issued Date : 2003.10.15 CYStech Electronics Corp.Revised Date : 2012.06.14 Page No. : 1/6 High Voltage PNP Epitaxial Planar Transistor BTA1759A3Description High breakdown voltage. (BV =-400V) CEO Low saturation voltage, typical V = -0.2V at Ic / I = -20mA /-2mA. CE(sat) B Wide SOA (safe operation area). Complementary to BTC4505A3.
bta1721n3.pdf
Spec. No. : C308N3 Issued Date : 2002.06.11 CYStech Electronics Corp.Revised Date : 2013.10.31 Page No. : 1/7 General Purpose PNP Epitaxial Planar Transistor BTA1721N3Description High breakdown voltage. Low collector output capacitance. Ideal for chroma circuit. Pb-free lead plating and halogen-free package Symbol Outline BTA1721N3 SOT-23 BBase
bta1727l3.pdf
Spec. No. : C236L3 Issued Date : 2005.08.16 CYStech Electronics Corp.Revised Date : 2005.08.18 Page No. : 1/4 High Voltage PNP Epitaxial Planar Transistor BTA1727L3 Features High breakdown voltage, BV =-400V CEO Low saturation voltage High switching speed. Complementary to BTD2568L3 Pb-free package Symbol Outline BTA1727L3SOT-223 CE C B
Otros transistores... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
Liste
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