BTA1900M3 Todos los transistores

 

BTA1900M3 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BTA1900M3
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 2 W
   Tensión colector-base (Vcb): 80 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 100 MHz
   Capacitancia de salida (Cc): 25 pF
   Ganancia de corriente contínua (hfe): 120
   Paquete / Cubierta: SOT89
 

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BTA1900M3 Datasheet (PDF)

 ..1. Size:237K  cystek
bta1900m3.pdf pdf_icon

BTA1900M3

Spec. No. : C314M3 Issued Date : 2007.04.23 CYStech Electronics Corp.Revised Date : 2013.08.07 Page No. : 1/6 General Purpose PNP Epitaxial Planar Transistor BTA1900M3Features Large continuous collector current capability Low collector saturation voltage Pb-free lead plating package Symbol Outline BTA1900M3 SOT-89 BBase CCollector B C E EEm

 9.1. Size:271K  cystek
bta1952j3.pdf pdf_icon

BTA1900M3

Spec. No. : C601J3 Issued Date : 2004.05.17 CYStech Electronics Corp.Revised Date :2013.03.12 Page No. : 1/6 Low Vcesat PNP Epitaxial Planar Transistor BVCEO -80VIC -5ABTA1952J3 RCESAT 150m Features Low VCE(sat), VCE(sat)=-0.3 V (typical), at IC / IB = -2A / -0.2A Excellent DC current gain characteristics Wide SOA Complementary to BTC5103J3 R

 9.2. Size:210K  cystek
bta1952i3.pdf pdf_icon

BTA1900M3

Spec. No. : C601I3 Issued Date : 2005.10.14 CYStech Electronics Corp.Revised Date : 2009.02.04 Page No. : 1/ 5 Low Vcesat PNP Epitaxial Planar Transistor BVCEO -60VIC -5ABTA1952I3 RCESAT 150m Features Low VCE(sat), VCE(sat)=-0.45 V (typical), at IC / IB = -3A / -0.15A Excellent DC current gain characteristics Wide SOA Complementary to BTC5103I3

 9.3. Size:148K  cystek
bta1952e3.pdf pdf_icon

BTA1900M3

Spec. No. : C601E3-A Issued Date : 2004.09.16 CYStech Electronics Corp. Revised Date : Page No. : 1/4 Low Vcesat PNP Epitaxial Planar Transistor BTA1952E3 Features Low VCE(sat), VCE(sat)=-0.5 V (typical), at IC / IB = -3A / -0.15A Excellent DC current gain characteristics Wide SOA Symbol Outline BTA1952E3 TO-220AB BBase CCollector B C E EEmi

Otros transistores... BTA1664L3 , BTA1664M3 , BTA1721N3 , BTA1727L3 , BTA1759A3 , BTA1759N3 , BTA1774C3 , BTA1797M3 , 2SC2625 , BTA1952E3 , BTA1952I3 , BTA1952J3 , BTA1972K3 , BTA2029Y3 , BTA3513I3 , BTA3513J3 , BTA4403A3 .

History: DDTA114YKA | SML4014 | TI417 | BDY23B | GES4400 | BLX30

 

 
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