BTA1952J3 Todos los transistores

Spec. No. C601J3 Issued Date 2004.05.17 CYStech Electronics Corp. Revised Date 2013.03.12 Page No. 1/6 Low Vcesat PNP Epitaxial Planar Transistor BVCEO -80V IC -5A BTA1952J3 RCESAT 150m Features Low VCE(sat), VCE(sat)=-0.3 V (typical), at IC / IB = -2A / -0.2A Excellent DC current gain characteristics Wide SOA Complementary to BTC5103J3 R

Spec. No. C601E3-A Issued Date 2004.09.16 CYStech Electronics Corp. Revised Date Page No. 1/4 Low Vcesat PNP Epitaxial Planar Transistor BTA1952E3 Features Low VCE(sat), VCE(sat)=-0.5 V (typical), at IC / IB = -3A / -0.15A Excellent DC current gain characteristics Wide SOA Symbol Outline BTA1952E3 TO-220AB B Base C Collector B C E E Emi

Spec. No. C236K3 Issued Date 2012.10.23 CYStech Electronics Corp. Revised Date 2013.12.25 Page No. 1/6 Silicon PNP Epitaxial Planar Transistor BTA1972K3 Description High BV CEO High current capability Pb-free lead plating and halogen-free package Symbol Outline TO-92L BTA1972K3 B Base C Collector E Emitter Ordering Information Device

Spec. No. C314M3 Issued Date 2007.04.23 CYStech Electronics Corp. Revised Date 2013.08.07 Page No. 1/6 General Purpose PNP Epitaxial Planar Transistor BTA1900M3 Features Large continuous collector current capability Low collector saturation voltage Pb-free lead plating package Symbol Outline BTA1900M3 SOT-89 B Base C Collector B C E E Em