BTB1188M3 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Spec. No. : C812M3 Issued Date : 2003.05.25 CYStech Electronics Corp.Revised Date :2013.08.12 Page No. : 1/7 Low Vcesat PNP Epitaxial Planar Transistor BVCEO -30VIC -2ABTB1188M3 RCESAT(typ) 0.22 Features Low VCE(sat), VCE(sat)=-0.65 V (typical), at IC / IB = -3A / -0.1A Excellent current gain characteristics Complementary to BTD1766M3 Pb-free lead

Spec. No. : C623M3 Issued Date : 2003.05.25 CYStech Electronics Corp.Revised Date : 2013.08.12 Page No. : 1/7 Low Vcesat PNP Epitaxial Planar Transistor BVCEO -30VIC -2ABTB1188M3R RCESAT(typ) 0.22 Features Low VCE(sat), VCE(sat)=-0.65 V (typical), at IC / IB = -3A / -0.1A Excellent current gain characteristics Complementary to BTD1766M3 Pb-free lead

Spec. No. : C812M3-A Issued Date : 2011.02.17 CYStech Electronics Corp.Revised Date : Page No. : 1/7 Low Vcesat PNP Epitaxial Planar Transistor BVCEO -40VIC -2ABTB1188AM3 RCESAT(typ) 0.22 Features Low VCE(sat), VCE(sat)=-0.65 V (typical), at IC / IB = -3A / -0.1A Excellent current gain characteristics Complementary to BTD1766AM3 Pb-free lead platin

Spec. No. : C817J3 Issued Date : 2015.02.25 CYStech Electronics Corp.Revised Date : Page No. : 1/7 Low Vcesat PNP Epitaxial Planar Transistor BVCEO -50VIC -3ABTB1184J3S RCESAT 130m Features Low VCE(sat) Excellent current gain characteristics RoHS compliant and halogen-free package Symbol Outline BTB1184J3S TO-252(DPAK) BBase CCollector B C

Spec. No. : C817J3 Issued Date : 2003.04.18 CYStech Electronics Corp.Revised Date : 2010.12.08 Page No. : 1/6 Low Vcesat PNP Epitaxial Planar Transistor BVCEO -50VIC -3ABTB1184J3 RCESAT 130m Features Low VCE(sat) Excellent current gain characteristics Complementary to BTD1760J3 RoHS compliant package Symbol Outline BTB1184J3 TO-252(DPAK) B