BTB1198A3 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BTB1198A3

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.75 W

Tensión colector-base (Vcb): 80 V

Tensión colector-emisor (Vce): 80 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 180 MHz

Capacitancia de salida (Cc): 11 pF

Ganancia de corriente contínua (hFE): 120

Encapsulados: TO92

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BTB1198A3 datasheet

 ..1. Size:258K  cystek
btb1198a3.pdf pdf_icon

BTB1198A3

Spec. No. C824A3 Issued Date 2007.02.28 CYStech Electronics Corp. Revised Date 2012.12.27 Page No. 1/7 PNP Epitaxial Planar Transistor BTB1198A3 Features Low V , V = -0.16V (Typ.) @ I /I =-500mA/-50mA CE(SAT) CE(SAT) C B High breakdown voltage, BV =-80V CEO Complementary to BTD1768A3 Pb-free lead plating and halogen-free package Symbol Outline

 7.1. Size:274K  cystek
btb1198n3.pdf pdf_icon

BTB1198A3

Spec. No. C824N3 Issued Date 2006.06.06 CYStech Electronics Corp. Revised Date 2013.12.13 Page No. 1/7 PNP Epitaxial Planar Transistor BVCEO -80V IC -1A BTB1198N3 RCE(SAT) 320m (typ.) Features Low V , V = -0.16V (Typ.) @ I /I =-500mA/-50mA CE(SAT) CE(SAT) C B High breakdown voltage, BV =-80V CEO Complementary to BTD1782N3 Pb-free and Halogen-f

 7.2. Size:291K  cystek
btb1198k3.pdf pdf_icon

BTB1198A3

Spec. No. C824K3 Issued Date 2008.10.31 CYStech Electronics Corp. Revised Date 2013.10.09 Page No. 1/7 PNP Epitaxial Planar Transistor BTB1198K3 Features Low V , V = -0.16V (Typ.) @ I /I =-500mA/-50mA CE(SAT) CE(SAT) C B High breakdown voltage, BV =-100V CEO Complementary to BTD1768K3 Pb-free lead plating and halogen-free package Symbol Outline

 7.3. Size:290K  cystek
btb1198m3.pdf pdf_icon

BTB1198A3

Spec. No. C824M3 Issued Date 2007.05.04 CYStech Electronics Corp. Revised Date 2014.02.24 Page No. 1/6 General Purpose PNP Epitaxial Planar Transistor BTB1198M3 Features High breakdown voltage, BV -100V CEO Large continuous collector current capability Low collector saturation voltage Complementary to BTD5213M3 Pb-free lead plating and ha

Otros transistores... BTB826M3, BTB857AD3, BTB857D3, BTB1184J3, BTB1188AM3, BTB1188M3, BTB1188M3R, BTB1197N3, BC547B, BTB1198K3, BTB1198M3, BTB1198N3, BTB1199M3, BTB1205I3, BTB1216J3, BTB1236A3, BTB1236AE3