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BTB1198K3 Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BTB1198K3
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.9 W
   Tensión colector-base (Vcb): 120 V
   Tensión colector-emisor (Vce): 100 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 200 MHz
   Capacitancia de salida (Cc): 11 pF
   Ganancia de corriente contínua (hfe): 120
   Paquete / Cubierta: TO92L
 

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BTB1198K3 datasheet

 ..1. Size:291K  cystek
 btb1198k3.pdf pdf_icon

BTB1198K3

Spec. No. C824K3 Issued Date 2008.10.31 CYStech Electronics Corp. Revised Date 2013.10.09 Page No. 1/7 PNP Epitaxial Planar Transistor BTB1198K3 Features Low V , V = -0.16V (Typ.) @ I /I =-500mA/-50mA CE(SAT) CE(SAT) C B High breakdown voltage, BV =-100V CEO Complementary to BTD1768K3 Pb-free lead plating and halogen-free package Symbol Outline

 7.1. Size:258K  cystek
 btb1198a3.pdf pdf_icon

BTB1198K3

Spec. No. C824A3 Issued Date 2007.02.28 CYStech Electronics Corp. Revised Date 2012.12.27 Page No. 1/7 PNP Epitaxial Planar Transistor BTB1198A3 Features Low V , V = -0.16V (Typ.) @ I /I =-500mA/-50mA CE(SAT) CE(SAT) C B High breakdown voltage, BV =-80V CEO Complementary to BTD1768A3 Pb-free lead plating and halogen-free package Symbol Outline

 7.2. Size:274K  cystek
 btb1198n3.pdf pdf_icon

BTB1198K3

Spec. No. C824N3 Issued Date 2006.06.06 CYStech Electronics Corp. Revised Date 2013.12.13 Page No. 1/7 PNP Epitaxial Planar Transistor BVCEO -80V IC -1A BTB1198N3 RCE(SAT) 320m (typ.) Features Low V , V = -0.16V (Typ.) @ I /I =-500mA/-50mA CE(SAT) CE(SAT) C B High breakdown voltage, BV =-80V CEO Complementary to BTD1782N3 Pb-free and Halogen-f

 7.3. Size:290K  cystek
 btb1198m3.pdf pdf_icon

BTB1198K3

Spec. No. C824M3 Issued Date 2007.05.04 CYStech Electronics Corp. Revised Date 2014.02.24 Page No. 1/6 General Purpose PNP Epitaxial Planar Transistor BTB1198M3 Features High breakdown voltage, BV -100V CEO Large continuous collector current capability Low collector saturation voltage Complementary to BTD5213M3 Pb-free lead plating and ha

MOSTRAR MÁS

Otros transistores... BTB857AD3 , BTB857D3 , BTB1184J3 , BTB1188AM3 , BTB1188M3 , BTB1188M3R , BTB1197N3 , BTB1198A3 , TIP142 , BTB1198M3 , BTB1198N3 , BTB1199M3 , BTB1205I3 , BTB1216J3 , BTB1236A3 , BTB1236AE3 , BTB1236AFP .

 

 

 


 
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