BTB1236AFP . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BTB1236AFP
Código: B1236A
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 20 W
Tensión colector-base (Vcb): 180 V
Tensión colector-emisor (Vce): 160 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 1.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 180 MHz
Capacitancia de salida (Cc): 24 pF
Ganancia de corriente contínua (hfe): 180
Paquete / Cubierta: TO220FP
Búsqueda de reemplazo de transistor bipolar BTB1236AFP
BTB1236AFP Datasheet (PDF)
btb1236afp.pdf
Spec. No. : C854FP Issued Date : 2011.09.13 CYStech Electronics Corp.Revised Date : Page No. : 1/5 Silicon PNP Epitaxial Planar Transistor BTB1236AFPDescription High BV CEO High current capability RoHS compliant package Symbol Outline BTB1236AFP TO-220FP BBase CCollector EEmitter B C E Absolute Maximum Ratings (Ta=25C) Parameter Sym
btb1236aj3.pdf
Spec. No. : C315J3 Issued Date : 2010.12.31 CYStech Electronics Corp.Revised Date : Page No. : 1/6 Silicon PNP Epitaxial Planar Transistor BVCEO -160VIC -1.5ABTB1236AJ3RCESAT(MAX) 600m Description High BV CEO High current capability RoHS compliant package Symbol Outline BTB1236AJ3 TO-252(DPAK) BBase CCollector EEmitter B C E Ab
btb1236a3.pdf
Spec. No. : C854A3 Issued Date : 2004.07.28 CYStech Electronics Corp.Revised Date : 2012.04.27 Page No. : 1/6 Silicon PNP Epitaxial Planar Transistor BTB1236A3Description High BV CEO High current capability Pb-free lead plating package Symbol Outline BTB1236A3 TO-92 BBase CCollector EEmitter E C BAbsolute Maximum Ratings (Ta=25C) Par
btb1236ai3.pdf
Spec. No. : C315I3 Issued Date : 2012.01.16 CYStech Electronics Corp.Revised Date : Page No. : 1/5 Silicon PNP Epitaxial Planar Transistor BTB1236AI3Description High BV CEO High current capability Complementary to BTD1857AI3 RoHS compliant package Symbol Outline BTB1236AI3 TO-251 BBase CCollector EEmitter B C E Absolute Maximum Ra
btb1236am3.pdf
Spec. No. : C854M3 Issued Date : 2004.08.20 CYStech Electronics Corp.Revised Date : 2013.08.12 Page No. : 1/7 Silicon PNP Epitaxial Planar Transistor BTB1236AM3Description High BV CEO High current capability RoHS compliant package Symbol Outline BTB1236AM3 SOT-89 BBase CCollector EEmitter B C E Absolute Maximum Ratings (Ta=25C) Para
btb1236at3.pdf
Spec. No. : C854T3 Issued Date : 2005.08.23 CYStech Electronics Corp.Revised Date :2006.07.11 Page No. : 1/4 Silicon PNP Epitaxial Planar Transistor BTB1236AT3Description High BV CEO High current capability Pb-free package Symbol Outline BTB1236AT3 TO-126 BBase CCollector EEmitter E C BAbsolute Maximum Ratings (Ta=25C) Parameter Sy
btb1236ae3.pdf
Spec. No. : C854E3 Issued Date : 2004.07.28 CYStech Electronics Corp. Revised Date : Page No. : 1/4 Silicon PNP Epitaxial Planar Transistor BTB1236AE3Description High BV CEO High current capability Symbol Outline BTB1236AE3 TO-220AB BBase CCollector EEmitter B C E Absolute Maximum Ratings (Ta=25C) Parameter Symbol Limits UnitCollector-
btb1236ak3.pdf
Spec. No. : C854K3 Issued Date : 2012.10.08 CYStech Electronics Corp.Revised Date : Page No. : 1/6 Silicon PNP Epitaxial Planar Transistor BTB1236AK3Description High BV CEO High current capability Pb-free lead plating package Symbol Outline TO-92L BTB1236AK3 BBase CCollector EEmitter Absolute Maximum Ratings (Ta=25C) Parameter Symbol
btb1236al3.pdf
Spec. No. : C854L3 Issued Date : 2004.07.28 CYStech Electronics Corp. Revised Date : Page No. : 1/4 Silicon PNP Epitaxial Planar Transistor BTB1236AL3Description High BV CEO High current capability SymbolBTB1236AL3 BBase CCollector EEmitter Absolute Maximum Ratings (Ta=25C) Parameter Symbol Limits UnitCollector-Base Voltage VCBO -180 VCol
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