BTB1243I3 Todos los transistores

Spec. No. C817I3 Issued Date 2003.07.03 CYStech Electronics Corp. Revised Date 2012.02.02 Page No. 1/6 Low Vcesat PNP Epitaxial Planar Transistor BTB1243I3 Features Low VCE(sat), VCE(sat)=-0.24 V (typical), at IC / IB = -2A / -0.2A Excellent current gain characteristics Complementary to BTD1864I3 Pb free package Symbol Outline BTB1243I3 TO-251

BTA/BTB12 and T12 Series SNUBBERLESS , LOGIC LEVEL & STANDARD 12A TRIACS MAIN FEATURES A2 Symbol Value Unit IT(RMS) 12 A G VDRM/VRRM A1 600 and 800 V A2 IGT (Q1) 5 to 50 mA DESCRIPTION A1 A2 Available either in through-hole or surface-mount G packages, the BTA/BTB12 and T12 triac series is suitable for general purpose AC switching. They D2PAK can be used as an ON/OFF

Spec. No. C315J3 Issued Date 2010.12.31 CYStech Electronics Corp. Revised Date Page No. 1/6 Silicon PNP Epitaxial Planar Transistor BVCEO -160V IC -1.5A BTB1236AJ3 RCESAT(MAX) 600m Description High BV CEO High current capability RoHS compliant package Symbol Outline BTB1236AJ3 TO-252(DPAK) B Base C Collector E Emitter B C E Ab

Spec. No. C854A3 Issued Date 2004.07.28 CYStech Electronics Corp. Revised Date 2012.04.27 Page No. 1/6 Silicon PNP Epitaxial Planar Transistor BTB1236A3 Description High BV CEO High current capability Pb-free lead plating package Symbol Outline BTB1236A3 TO-92 B Base C Collector E Emitter E C B Absolute Maximum Ratings (Ta=25 C) Par

Spec. No. C315I3 Issued Date 2012.01.16 CYStech Electronics Corp. Revised Date Page No. 1/5 Silicon PNP Epitaxial Planar Transistor BTB1236AI3 Description High BV CEO High current capability Complementary to BTD1857AI3 RoHS compliant package Symbol Outline BTB1236AI3 TO-251 B Base C Collector E Emitter B C E Absolute Maximum Ra

Spec. No. C854M3 Issued Date 2004.08.20 CYStech Electronics Corp. Revised Date 2013.08.12 Page No. 1/7 Silicon PNP Epitaxial Planar Transistor BTB1236AM3 Description High BV CEO High current capability RoHS compliant package Symbol Outline BTB1236AM3 SOT-89 B Base C Collector E Emitter B C E Absolute Maximum Ratings (Ta=25 C) Para

Spec. No. C854FP Issued Date 2011.09.13 CYStech Electronics Corp. Revised Date Page No. 1/5 Silicon PNP Epitaxial Planar Transistor BTB1236AFP Description High BV CEO High current capability RoHS compliant package Symbol Outline BTB1236AFP TO-220FP B Base C Collector E Emitter B C E Absolute Maximum Ratings (Ta=25 C) Parameter Sym

Spec. No. C854T3 Issued Date 2005.08.23 CYStech Electronics Corp. Revised Date 2006.07.11 Page No. 1/4 Silicon PNP Epitaxial Planar Transistor BTB1236AT3 Description High BV CEO High current capability Pb-free package Symbol Outline BTB1236AT3 TO-126 B Base C Collector E Emitter E C B Absolute Maximum Ratings (Ta=25 C) Parameter Sy

Spec. No. C854E3 Issued Date 2004.07.28 CYStech Electronics Corp. Revised Date Page No. 1/4 Silicon PNP Epitaxial Planar Transistor BTB1236AE3 Description High BV CEO High current capability Symbol Outline BTB1236AE3 TO-220AB B Base C Collector E Emitter B C E Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Limits Unit Collector-

Spec. No. C815I3 Issued Date 2005.03.29 CYStech Electronics Corp. Revised Date 2010.05.02 Page No. 1/ 6 Low Vcesat PNP Epitaxial Planar Transistor BVCEO -20V IC -5A BTB1205I3 RCESAT 127m typ. Features Low VCE(sat), VCE(sat)=-0.38 V (typical), at IC / IB = -3A / -60mA Excellent DC current gain characteristics Fast switching speed Large current

Spec. No. C854K3 Issued Date 2012.10.08 CYStech Electronics Corp. Revised Date Page No. 1/6 Silicon PNP Epitaxial Planar Transistor BTB1236AK3 Description High BV CEO High current capability Pb-free lead plating package Symbol Outline TO-92L BTB1236AK3 B Base C Collector E Emitter Absolute Maximum Ratings (Ta=25 C) Parameter Symbol

Spec. No. C849L3 Issued Date 2012.08.28 CYStech Electronics Corp. Revised Date Page No. 1/7 Silicon PNP Epitaxial Planar Transistor BVCEO -240V IC -1A BTB1238AL3 VCESAT(Max) -0.3V Description High BV CEO High current capability RoHS compliant package Pb-free lead plating and halogen-free package Symbol Outline BTB1238AL3 SOT-223 C B Ba

Spec. No. C854L3 Issued Date 2004.07.28 CYStech Electronics Corp. Revised Date Page No. 1/4 Silicon PNP Epitaxial Planar Transistor BTB1236AL3 Description High BV CEO High current capability Symbol BTB1236AL3 B Base C Collector E Emitter Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Limits Unit Collector-Base Voltage VCBO -180 V Col

Spec. No. C811J3 Issued Date 2008.12.10 CYStech Electronics Corp. Revised Date 2010.12.08 Page No. 1/7 PNP Epitaxial Planar High Current (High Performance) Transistor BVCEO -140V BTB1216J3 IC -5A RCE(SAT) 90m typ. Features 5 Amps continuous current, up to 10 Amps peak current Very low saturation voltage Excellent gain characteristics specified up t