BTB1580M3 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BTB1580M3

Código: BN

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 2 W

Tensión colector-base (Vcb): 100 V

Tensión colector-emisor (Vce): 100 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 4 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Capacitancia de salida (Cc): 200 pF

Ganancia de corriente contínua (hFE): 1000

Encapsulados: SOT89

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BTB1580M3 datasheet

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btb1580m3.pdf pdf_icon

BTB1580M3

Spec. No. C655M3 Issued Date 2004.03.18 CYStech Electronics Corp. Revised Date 2013.08.12 Page No. 1/6 PNP Epitaxial Planar Transistor BTB1580M3 Description The BTB1580M3 is a PNP Darlington transistor, designed for use in general purpose amplifier and low speed switching application. Pb-free package process is adopted. Equivalent Circuit Outline BTB1580M3 SOT-89 C

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btb1580j3.pdf pdf_icon

BTB1580M3

Spec. No. C655J3 Issued Date 2008.07.25 CYStech Electronics Corp. Revised Date 2010.12.08 Page No. 1/6 PNP Epitaxial Planar Transistor BVCEO -120V BTB1580J3 IC -4A RCESAT 600m Description The BTB1580J3 is a PNP Darlington transistor, designed for use in general purpose amplifier and low speed switching application. Pb-free package process is adopted. Equivalent

 7.2. Size:234K  cystek
btb1580l3.pdf pdf_icon

BTB1580M3

Spec. No. C655L3 Issued Date 2011.07.14 CYStech Electronics Corp. Revised Date Page No. 1/6 PNP Epitaxial Planar Transistor BTB1580L3 Description The BTB1580L3 is a PNP Darlington transistor, designed for use in general purpose amplifier and low speed switching application. Pb-free package process is adopted. Equivalent Circuit Outline BTB1580L3 SOT-223 C E C

 9.1. Size:295K  cystek
btb1590n3.pdf pdf_icon

BTB1580M3

Spec. No. C313N3 Issued Date 2002.06.18 CYStech Electronics Corp. Revised Date 2014.01.13 Page No. 1/8 Low V PNP Epitaxial Planar Transistor CESAT BTB1590N3 Features Low VCE(SAT), VCE(SAT)=-0.21V(typically) at IC=-500mA/IB=-50mA. Complementary to BTD2444N3. Pb-free lead plating and halogen-free package Symbol Outline BTB1590N3 SOT-23 B Base C C

Otros transistores... BTB1424AT3, BTB1424FP, BTB1424L3, BTB1424N3, BTB1427M3, BTB1498N3, BTB1580J3, BTB1580L3, BC337, BTB1590N3, BTB4110D3, BTB4511J3, BTB5140N3, BTB5213L3, BTB5240N3, BTB5839M3, BTB9050N3