BTB1590N3 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Spec. No. : C313N3 Issued Date : 2002.06.18 CYStech Electronics Corp.Revised Date : 2014.01.13 Page No. : 1/8 Low V PNP Epitaxial Planar Transistor CESATBTB1590N3Features Low VCE(SAT), VCE(SAT)=-0.21V(typically) at IC=-500mA/IB=-50mA. Complementary to BTD2444N3. Pb-free lead plating and halogen-free package Symbol Outline BTB1590N3 SOT-23 BBase CC

Spec. No. : C655J3 Issued Date : 2008.07.25 CYStech Electronics Corp.Revised Date :2010.12.08 Page No. : 1/6 PNP Epitaxial Planar Transistor BVCEO -120VBTB1580J3 IC -4ARCESAT 600m Description The BTB1580J3 is a PNP Darlington transistor, designed for use in general purpose amplifier and low speed switching application. Pb-free package process is adopted. Equivalent

Spec. No. : C655M3 Issued Date : 2004.03.18 CYStech Electronics Corp.Revised Date :2013.08.12 Page No. : 1/6 PNP Epitaxial Planar Transistor BTB1580M3 Description The BTB1580M3 is a PNP Darlington transistor, designed for use in general purpose amplifier and low speed switching application. Pb-free package process is adopted. Equivalent Circuit Outline BTB1580M3 SOT-89 C

Spec. No. : C655L3 Issued Date : 2011.07.14 CYStech Electronics Corp.Revised Date : Page No. : 1/6 PNP Epitaxial Planar Transistor BTB1580L3 Description The BTB1580L3 is a PNP Darlington transistor, designed for use in general purpose amplifier and low speed switching application. Pb-free package process is adopted. Equivalent Circuit Outline BTB1580L3 SOT-223 CE C