BTC2030N3 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Spec. No. : C316N3 Issued Date : 2008.01.15 CYStech Electronics Corp.Revised Date : 2013.10.31 Page No. : 1/7 General Purpose NPN Epitaxial Planar Transistor BTC2030N3Features High breakdown voltage, BV 200V CEO Large continuous collector current capability Low collector saturation voltage Pb-free lead plating and halogen-free package Symbol Outline

Spec. No. : C316A3 Issued Date : 2005.10.27 CYStech Electronics Corp.Revised Date : 2013.10.09 Page No. : 1/6 General Purpose NPN Epitaxial Planar Transistor BTC2030A3Features High breakdown voltage, BV 200V CEO Large continuous collector current capability Low collector saturation voltage Complementary to BTA1013A3 Pb-free lead plating package

Spec. No. : C201N3 Issued Date : 2002.05.18 CYStech Electronics Corp.Revised Date : 2002.10.31 Page No. : 1/4 Gentral Purpose NPN Epitaxial Planar Transistor BTC2059N3 Description The BTC2059N3 is designed for using in VHF & UHF oscillators and VHF mixer in tuner of a TV receiver. Features High transition frequency. ( fT = 1.0GHz, T . @ V =10V, IC=10mA, f=200MHz ) Y

Spec. No. : C201A3 Issued Date : 2004.06.16 CYStech Electronics Corp.Revised Date :2008.02.29 Page No. : 1/4 VHF/UHF NPN Epitaxial Planar Transistor BTC2059A3 Description The BTC2059A3 is designed for use in VHF & UHF oscillators and VHF mixer in tuner of a TV receiver. Features High transition frequency. Very low capacitance. Small Rbb-Cc and high curren