BTC2881FP . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BTC2881FP
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 15 W
Tensión colector-base (Vcb): 300 V
Tensión colector-emisor (Vce): 200 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 120 MHz
Capacitancia de salida (Cc): 30 pF
Ganancia de corriente contínua (hfe): 160
Paquete / Cubierta: TO220FP
Búsqueda de reemplazo de transistor bipolar BTC2881FP
BTC2881FP Datasheet (PDF)
btc2881fp.pdf
Spec. No. : C316FP Issued Date : 2010.09.23 CYStech Electronics Corp.Revised Date : 2010.09.28 Page No. : 1/5 Silicon NPN Epitaxial Planar Transistor BVCEO 200VBTC2881FPIC 1ARCESAT(MAX) 0.86 Description High breakdown voltage, BV 200V CEO Large continuous collector current capability Low collector saturation voltage RoHS compliant package Sy
btc2881m3.pdf
Spec. No. : C316M3 Issued Date : 2007.03.28 CYStech Electronics Corp.Revised Date : 2013.08.07 Page No. : 1/6 General Purpose NPN Epitaxial Planar Transistor BVCEO 200VBTC2881M3IC 1ARCESAT(MAX) 0.86 Features High breakdown voltage, BV 200V CEO Large continuous collector current capability Low collector saturation voltage Complementary to BTA120
btc2881l3.pdf
Spec. No. : C316L3 Issued Date : 2010.12.29 CYStech Electronics Corp.Revised Date : 2011.01.03 Page No. : 1/7 General Purpose NPN Epitaxial Planar Transistor BVCEO 200VBTC2881L3IC 1ARCESAT(MAX) 0.86 Features High breakdown voltage, BV 200V CEO Large continuous collector current capability Low collector saturation voltage Pb-free lead plating an
btc2881e3.pdf
Spec. No. : C316E3 Issued Date : 2010.01.22 CYStech Electronics Corp.Revised Date : 2010.09.28 Page No. : 1/5 Silicon NPN Epitaxial Planar Transistor BVCEO 200VBTC2881E3IC 1ARCESAT(MAX) 0.86 Description High breakdown voltage, BV 200V CEO Large continuous collector current capability Low collector saturation voltage RoHS compliant package Sy
btc2881j3.pdf
Spec. No. : C316J3 Issued Date : 2009.11.17 CYStech Electronics Corp.Revised Date : 2010.12.08 Page No. : 1/7 General Purpose NPN Epitaxial Planar Transistor BVCEO 200VBTC2881J3IC 1ARCESAT(MAX) 0.86 Features High breakdown voltage, BV 200V CEO Large continuous collector current capability Low collector saturation voltage Pb-free lead plating a
Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
Liste
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