BTC2883J3 Todos los transistores

 ..1. Size:283K  cystek
 btc2883j3.pdf

Spec. No. C239J3 Issued Date 2010.06.23 CYStech Electronics Corp. Revised Date 2011.03.08 Page No. 1/6 General Purpose NPN Epitaxial Planar Transistor BVCEO 240V BTC2883J3 IC 1.2A RCESAT(MAX) 0.6 Features High breakdown voltage, BV 240V CEO Large continuous collector current capability Low collector saturation voltage Pb-free lead plating

 8.1. Size:187K  cystek
 btc2880a3.pdf

Spec. No. C319A3 Issued Date 2007.05.04 CYStech Electronics Corp. Revised Date Page No. 1/7 General Purpose NPN Epitaxial Planar Transistor BTC2880A3 Description The BTC2880A3 is designed for general purpose medium power amplifier and switching applications. Features Low collector saturation voltage High breakdown voltage, V =100V (min.) CEO High coll

 8.2. Size:236K  cystek
 btc2881m3.pdf

Spec. No. C316M3 Issued Date 2007.03.28 CYStech Electronics Corp. Revised Date 2013.08.07 Page No. 1/6 General Purpose NPN Epitaxial Planar Transistor BVCEO 200V BTC2881M3 IC 1A RCESAT(MAX) 0.86 Features High breakdown voltage, BV 200V CEO Large continuous collector current capability Low collector saturation voltage Complementary to BTA120

 8.3. Size:283K  cystek
 btc2882j3.pdf

Spec. No. C238J3 Issued Date 2010.06.23 CYStech Electronics Corp. Revised Date 2011.03.08 Page No. 1/6 General Purpose NPN Epitaxial Planar Transistor BVCEO 200V BTC2882J3 IC 1A RCESAT(MAX) 0.6 Features High breakdown voltage, BV 200V CEO Large continuous collector current capability Low collector saturation voltage Pb-free lead plating an

 8.4. Size:273K  cystek
 btc2881l3.pdf

Spec. No. C316L3 Issued Date 2010.12.29 CYStech Electronics Corp. Revised Date 2011.01.03 Page No. 1/7 General Purpose NPN Epitaxial Planar Transistor BVCEO 200V BTC2881L3 IC 1A RCESAT(MAX) 0.86 Features High breakdown voltage, BV 200V CEO Large continuous collector current capability Low collector saturation voltage Pb-free lead plating an

 8.5. Size:225K  cystek
 btc2881e3.pdf

Spec. No. C316E3 Issued Date 2010.01.22 CYStech Electronics Corp. Revised Date 2010.09.28 Page No. 1/5 Silicon NPN Epitaxial Planar Transistor BVCEO 200V BTC2881E3 IC 1A RCESAT(MAX) 0.86 Description High breakdown voltage, BV 200V CEO Large continuous collector current capability Low collector saturation voltage RoHS compliant package Sy

 8.6. Size:226K  cystek
 btc2881fp.pdf

Spec. No. C316FP Issued Date 2010.09.23 CYStech Electronics Corp. Revised Date 2010.09.28 Page No. 1/5 Silicon NPN Epitaxial Planar Transistor BVCEO 200V BTC2881FP IC 1A RCESAT(MAX) 0.86 Description High breakdown voltage, BV 200V CEO Large continuous collector current capability Low collector saturation voltage RoHS compliant package Sy

 8.7. Size:160K  cystek
 btc2880m3g.pdf

Spec. No. C319M3G Issued Date 2007.05.31 CYStech Electronics Corp. Revised Date 2008.12.22 Page No. 1/5 General Purpose NPN Epitaxial Planar Transistor BTC2880M3G Features High breakdown voltage, BV 120V CEO Large continuous collector current capability Low collector saturation voltage RoHS compliant and Halogen-free package Symbol Outline B

 8.8. Size:285K  cystek
 btc2881j3.pdf

Spec. No. C316J3 Issued Date 2009.11.17 CYStech Electronics Corp. Revised Date 2010.12.08 Page No. 1/7 General Purpose NPN Epitaxial Planar Transistor BVCEO 200V BTC2881J3 IC 1A RCESAT(MAX) 0.86 Features High breakdown voltage, BV 200V CEO Large continuous collector current capability Low collector saturation voltage Pb-free lead plating a

 8.9. Size:241K  cystek
 btc2880m3.pdf

Spec. No. C319M3 Issued Date 2007.05.31 CYStech Electronics Corp. Revised Date 2013.09.23 Page No. 1/6 General Purpose NPN Epitaxial Planar Transistor BTC2880M3 Features High breakdown voltage, BV 120V CEO Large continuous collector current capability Low collector saturation voltage Pb-free package Symbol Outline BTC2880M3 SOT-89 B Base