2N6422 Todos los transistores

 ..1. Size:224K  bocasemi
 2n3583 2n3584 2n3585 2n4240 2n6420 2n6421 2n6422 2n6423.pdf

A Boca Semiconductor Corp. http //www.bocasemi.com A http //www.bocasemi.com A http //www.bocasemi.com A http //www.bocasemi.com

 ..2. Size:221K  inchange semiconductor
 2n6422.pdf

isc Silicon PNP Power Transistor 2N6422 DESCRIPTION Collector-Emitter Breakdown Voltage- V =-300V(Min) CEO Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) UNI SYMBOL PARAMETER VALUE T V Collector-Base Voltage -500 V CBO V Collector-Emitter Voltage

 9.1. Size:298K  rca
 2n583 2n584 2n640 2n641 2n642 2n643 2n644 2n645 2n656 2n696.pdf

 9.2. Size:212K  motorola
 2n6426 2n6427.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N6426/D Darlington Transistors 2N6426* NPN Silicon 2N6427 *Motorola Preferred Device COLLECTOR 3 BASE 2 EMITTER 1 1 2 MAXIMUM RATINGS 3 Rating Symbol Value Unit CASE 29 04, STYLE 1 Collector Emitter Voltage VCEO 40 Vdc TO 92 (TO 226AA) Collector Base Voltage VCBO 40 Vdc Emitter Base Voltage VEBO 12 Vd

 9.3. Size:49K  philips
 2n6427 1.pdf

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N6427 NPN Darlington transistor 1997 Jul 04 Product specification File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN Darlington transistor 2N6427 FEATURES PINNING High current (max. 500 mA) PIN DESCRIPTION Low voltage (max. 30 V) 1 collector High DC current gain (min. 10

 9.4. Size:295K  fairchild semi
 2n6426.pdf

Discrete POWER & Signal Technologies 2N6426 C TO-92 B E NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V V Collector-Base Vo

 9.5. Size:706K  fairchild semi
 2n6427 mmbt6427.pdf

2N6427 MMBT6427 C E C TO-92 B B SOT-23 E Mark 1V NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V VCBO Collect

 9.6. Size:35K  samsung
 2n6428a.pdf

 9.7. Size:34K  samsung
 2n6428.pdf

 9.8. Size:11K  semelab
 2n6425.pdf

2N6425 Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO66 6.35 (0.250) Metal Package. 8.64 (0.340) 3.68 (0.145) rad. 3.61 (0.142) max. 4.08(0.161) rad. Bipolar PNP Device. 1 2 VCEO = 300V IC = 0.25A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS sp

 9.9. Size:148K  jmnic
 2n6420.pdf

JMnic Product Specification Silicon PNP Power Transistors 2N6420 DESCRIPTION With TO-66 package Continuous collector current-IC=-1A Power dissipation -PD=35W @TC=25 Complement to type 2N3583 APPLICATIONS High speed switching and linear amplifier High-voltage operational amplifiers Switching regulators ,converters Deflection stages and high fidelity ampli

 9.10. Size:1285K  sprague
 2n5419 2n5420 2n5550 2n5551 2n5830 2n5831 2n5832 2n5998 2n5999 2n6008 2n6009 2n6076 2n6426 2n6427.pdf

 9.11. Size:221K  inchange semiconductor
 2n6423.pdf

isc Silicon PNP Power Transistor 2N6423 DESCRIPTION Collector-Emitter Breakdown Voltage- V =-300V(Min) CEO Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) UNI SYMBOL PARAMETER VALUE T V Collector-Base Voltage -500 V CBO V Collector-Emitter Voltage

 9.12. Size:220K  inchange semiconductor
 2n6425.pdf

isc Silicon PNP Power Transistor 2N6425 DESCRIPTION Collector-Emitter Breakdown Voltage- V =-300V(Min) CEO Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) UNI SYMBOL PARAMETER VALUE T V Collector-Base Voltage -325 V CBO V Collector-Emitter Voltage

 9.13. Size:188K  inchange semiconductor
 2n6420.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2N6420 DESCRIPTION Contunuous Collector Current-IC= -1A Power Dissipation-PC= 35W @TC= 25 Collector-Emitter Saturation Voltage- VCE(sat)= -5.0 V(Max)@ IC = -1A APPLICATIONS Designed for high-speed switching and linear amplifier appli- cation for high-voltage operational amplifiers, s