BTC4505N3 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BTC4505N3

Código: 3D

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.225 W

Tensión colector-base (Vcb): 400 V

Tensión colector-emisor (Vce): 400 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 0.3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 20 MHz

Capacitancia de salida (Cc): 7 pF

Ganancia de corriente contínua (hFE): 100

Encapsulados: SOT23

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BTC4505N3 datasheet

 ..1. Size:245K  cystek
 btc4505n3.pdf pdf_icon

BTC4505N3

Spec. No. C210N3 Issued Date 2003.05.09 CYStech Electronics Corp. Revised Date 2010.10.19 Page No. 1/6 High Voltage NPN Epitaxial Planar Transistor BVCEO 400V IC 0.3A BTC4505N3 VCESAT(TYP) 0.1V Features High breakdown voltage. (BV =400V) CEO Low saturation voltage, typically V (sat) =0.1V at I /I 10mA/1mA. CE C B= Complementary to BTA1759N3 Pb-

 7.1. Size:180K  cystek
 btc4505m3.pdf pdf_icon

BTC4505N3

Spec. No. C210M3 Issued Date 2003.05.15 CYStech Electronics Corp. Revised Date 2013.08.06 Page No. 1/6 High Voltage NPN Epitaxial Planar Transistor BTC4505M3 Features High breakdown voltage, BV =400V. CEO (min) Low saturation voltage, typically V (sat) =0.14V at I /I 50mA/5mA. CE C B= Complementary to BTA1759M3. Pb-free package. Symbol Outline B

 7.2. Size:132K  cystek
 btc4505a3.pdf pdf_icon

BTC4505N3

Spec. No. C210A3-R Issued Date 2003.10.15 CYStech Electronics Corp. Revised Date 2007.11.22 Page No. 1/4 High Voltage NPN Epitaxial Planar Transistor BTC4505A3 Features High breakdown voltage. (BV = 400V) CEO Low saturation voltage, typically V (sat) = 0.1V at I / I 10mA / 1mA. CE C B= Complementary to BTA1759A3 RoHS compliant package Symbol Outl

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