BTC4672M3 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Spec. No. : C819M3 Issued Date : 2005.08.16 CYStech Electronics Corp.Revised Date :2013.08.12 Page No. : 1/6 Silicon NPN Epitaxial Planar Transistor BTC4672M3Features Low saturation voltage, typically V =0.1V at I /I =1A/50mA CE(sat) C B Excellent DC current gain characteristics Complementary to BTA1797M3 Pb-free lead plating and halogen-free package Sy

Spec. No. : C210K3 Issued Date : 2006.12.08 CYStech Electronics Corp.Revised Date : Page No. : 1/4 High Voltage NPN Epitaxial Planar Transistor BTC4621K3 Features High breakdown voltage. (BV =350V) CEO Low saturation voltage, typically V (sat) =0.1V at I /I 10mA/1mA. CE C B= Pb-free package SymbolBTC4621K3BBase CCollector EEmitter Absolute

Spec. No. : C210D3 Issued Date : 2004.09.01 CYStech Electronics Corp.Revised Date : 2006.04.21 Page No. : 1/4 High Voltage NPN Epitaxial Planar Transistor BTC4620D3 Features High breakdown voltage. (BV =350V) CEO Low saturation voltage, typically V (sat) =0.1V at I /I 10mA/1mA. CE C B= Complementary to BTA1776D3 Pb-free package Symbol Outline BTC4620

Spec. No. : C204C3 Issued Date : 2004.03.02 CYStech Electronics Corp.Revised Date : 2011.10.27 Page No. : 1/8 General Purpose NPN Epitaxial Planar Transistor BTC4617C3Description The BTC4617C3 is designed for use in driver stage of AF amplifier and low speed switching. Symbol Outline BTC4617C3 SOT-523 C BBase CCollector EEmitter B E Absolute Maximum Ra