BTD882J3 Todos los transistores

 

BTD882J3 Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BTD882J3
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 10 W
   Tensión colector-base (Vcb): 40 V
   Tensión colector-emisor (Vce): 30 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 3 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 90 MHz
   Capacitancia de salida (Cc): 13 pF
   Ganancia de corriente contínua (hfe): 180
   Paquete / Cubierta: TO252
 

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BTD882J3 datasheet

 ..1. Size:302K  cystek
 btd882j3.pdf pdf_icon

BTD882J3

Spec. No. C848J3-H Issued Date 2003.04.02 CYStech Electronics Corp. Revised Date 2013.03.12 Page No. 1/7 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 50V IC 3A BTD882J3 RCESAT (Typ) 125m Features Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A Excellent current gain characteristics Complementary to BTB772J3 Pb-free package Symbol Outli

 8.1. Size:320K  cystek
 btd882t3.pdf pdf_icon

BTD882J3

Spec. No. C848T3-H Issued Date 2002.08.18 CYStech Electronics Corp. Revised Date 2014.03.17 Page No. 1/6 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 30V IC 3A BTD882T3 RCESAT (Typ) 125m Features Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A Excellent current gain characteristics Complementary to BTB772T3 Pb-free package Symbol Out

 8.2. Size:246K  cystek
 btd882am3.pdf pdf_icon

BTD882J3

Spec. No. C848M3-H Issued Date 2003.06.17 CYStech Electronics Corp. Revised Date 2013.08.12 Page No. 1/7 Low V NPN Epitaxial Planar Transistor CE(sat) BVCEO 50V IC 3A BTD882AM3 RCESAT (Typ) 125m Features Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A Excellent current gain characteristics Complementary to BTB772AM3 Pb-free lead plating p

 8.3. Size:249K  cystek
 btd882st3.pdf pdf_icon

BTD882J3

Spec. No. C858T3 Issued Date 2011.06.28 CYStech Electronics Corp. Revised Date Page No. 1/7 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 30V IC 3A BTD882ST3 RCESAT(typ) 150m Features Low VCE(sat), 0.3V typ. at IC / IB = 2A / 0.2A Excellent current gain characteristics Complementary to BTB772ST3 Pb-free lead plating package Symbol Outline

MOSTRAR MÁS

Otros transistores... BTC5706I3 , BTC5706J3 , BTC9013A3 , BTC9014A3 , BTD142F3 , BTD882AM3 , BTD882D3 , BTD882I3 , BD136 , BTD882SA3 , BTD882ST3 , BTD882T3 , BTD965A3 , BTD965LA3 , BTD965N3 , BTD1304A3 , BTD1304N3 .

 

 

 


 
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