BTD882SA3 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BTD882SA3

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.75 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 90 MHz

Capacitancia de salida (Cc): 13 pF

Ganancia de corriente contínua (hFE): 180

Encapsulados: TO92

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BTD882SA3 datasheet

 ..1. Size:302K  cystek
 btd882sa3.pdf pdf_icon

BTD882SA3

Spec. No. C848A3-H Issued Date 2003.05.31 CYStech Electronics Corp. Revised Date 2013.03.21 Page No. 1/7 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 50V IC 3A BTD882SA3 RCESAT (Typ) 125m Features Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A Excellent current gain characteristics Complementary to BTB772SA3 Pb-free lead plating and h

 7.1. Size:249K  cystek
 btd882st3.pdf pdf_icon

BTD882SA3

Spec. No. C858T3 Issued Date 2011.06.28 CYStech Electronics Corp. Revised Date Page No. 1/7 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 30V IC 3A BTD882ST3 RCESAT(typ) 150m Features Low VCE(sat), 0.3V typ. at IC / IB = 2A / 0.2A Excellent current gain characteristics Complementary to BTB772ST3 Pb-free lead plating package Symbol Outline

 8.1. Size:302K  cystek
 btd882j3.pdf pdf_icon

BTD882SA3

Spec. No. C848J3-H Issued Date 2003.04.02 CYStech Electronics Corp. Revised Date 2013.03.12 Page No. 1/7 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 50V IC 3A BTD882J3 RCESAT (Typ) 125m Features Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A Excellent current gain characteristics Complementary to BTB772J3 Pb-free package Symbol Outli

 8.2. Size:320K  cystek
 btd882t3.pdf pdf_icon

BTD882SA3

Spec. No. C848T3-H Issued Date 2002.08.18 CYStech Electronics Corp. Revised Date 2014.03.17 Page No. 1/6 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 30V IC 3A BTD882T3 RCESAT (Typ) 125m Features Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A Excellent current gain characteristics Complementary to BTB772T3 Pb-free package Symbol Out

MOSTRAR MÁS

Otros transistores... BTC5706J3, BTC9013A3, BTC9014A3, BTD142F3, BTD882AM3, BTD882D3, BTD882I3, BTD882J3, TIP120, BTD882ST3, BTD882T3, BTD965A3, BTD965LA3, BTD965N3, BTD1304A3, BTD1304N3, BTD1383L3