BTD1857AI3 Todos los transistores

 

BTD1857AI3 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BTD1857AI3

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 10 W

Tensión colector-base (Vcb): 180 V

Tensión colector-emisor (Vce): 160 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 1.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 200 MHz

Capacitancia de salida (Cc): 13 pF

Ganancia de corriente contínua (hFE): 160

Encapsulados: TO251

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BTD1857AI3 datasheet

 ..1. Size:178K  cystek
btd1857ai3.pdf pdf_icon

BTD1857AI3

Spec. No. C855I3 Issued Date 2004.09.16 CYStech Electronics Corp. Revised Date 2012.01.16 Page No. 1/5 Silicon NPN Epitaxial Planar Transistor BTD1857AI3 Description High BV CEO High current capability Complementary to BTB1236AI3 RoHS compliant package Symbol Outline BTD1857AI3 TO-251 B Base C Collector E Emitter B C E Absolute Ma

 6.1. Size:246K  cystek
btd1857am3.pdf pdf_icon

BTD1857AI3

Spec. No. C855M3-R Issued Date 2004.08.06 CYStech Electronics Corp. Revised Date 2013.10.31 Page No. 1/6 Silicon NPN Epitaxial Planar Transistor BVCEO 160V IC 1.5A BTD1857AM3 RCESAT(MAX) 0.3 Description High BV CEO High current capability Complementary to BTB1236AM3 Pb-free lead plating and halogen-free package Symbol Outline BTD1857AM3

 6.2. Size:159K  cystek
btd1857at3.pdf pdf_icon

BTD1857AI3

Spec. No. C855T3 Issued Date 2004.12.15 CYStech Electronics Corp. Revised Date 2006.06.12 Page No. 1/4 Silicon NPN Epitaxial Planar Transistor BTD1857AT3 Description High BV CEO High current capability Complementary to BTB1236AT3 Pb-free package Symbol Outline BTD1857AT3 TO-126 B Base C Collector E C B E Emitter Absolute Maximum

 6.3. Size:182K  cystek
btd1857ae3.pdf pdf_icon

BTD1857AI3

Spec. No. C855E3 Issued Date 2004.08.06 CYStech Electronics Corp. Revised Date 2013.11.13 Page No. 1/5 Silicon NPN Epitaxial Planar Transistor BTD1857AE3 Description High BV CEO High current capability Complementary to BTB1236AE3 Pb-free lead plating package Symbol Outline BTD1857AE3 TO-220AB B Base C Collector E Emitter B C E

Otros transistores... BTD1805I3 , BTD1805J3 , BTD1816I3 , BTD1816J3 , BTD1857A3 , BTD1857AD3 , BTD1857AE3 , BTD1857AFP , 2N3906 , BTD1857AJ3 , BTD1857AJ3G , BTD1857AL3 , BTD1857AM3 , BTD1857AT3 , BTD1858A3 , BTD1858I3 , BTD1858T3 .

 

 

 


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