BTD1857AJ3G Todos los transistores

 

BTD1857AJ3G Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BTD1857AJ3G

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 10 W

Tensión colector-base (Vcb): 180 V

Tensión colector-emisor (Vce): 160 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 1.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 140 MHz

Capacitancia de salida (Cc): 27 pF

Ganancia de corriente contínua (hFE): 160

Encapsulados: TO252AB TO252AA

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BTD1857AJ3G datasheet

 ..1. Size:228K  cystek
btd1857aj3g.pdf pdf_icon

BTD1857AJ3G

Spec. No. C855J3G Issued Date 2004.10.04 CYStech Electronics Corp. Revised Date 2010.12.08 Page No. 1/7 Silicon NPN Epitaxial Planar Transistor BVCEO 160V IC 1.5A BTD1857AJ3G RCESAT 310m Description High BV CEO High current capability Complementary to BTB1236AJ3G RoHS compliant and Halogen-free package Symbol Outline BTD1857AJ3G TO-252AB TO

 4.1. Size:202K  cystek
btd1857aj3.pdf pdf_icon

BTD1857AJ3G

Spec. No. C855J3 Issued Date 2004.10.04 CYStech Electronics Corp. Revised Date 2013.10.31 Page No. 1/6 Silicon NPN Epitaxial Planar Transistor BVCEO 160V IC 1.5A BTD1857AJ3 RCESAT 310m Description High BV CEO High current capability Complementary to BTB1236AJ3 Pb-free lead plating and halogen-free package Symbol Outline BTD1857AJ3 TO-252(DP

 6.1. Size:246K  cystek
btd1857am3.pdf pdf_icon

BTD1857AJ3G

Spec. No. C855M3-R Issued Date 2004.08.06 CYStech Electronics Corp. Revised Date 2013.10.31 Page No. 1/6 Silicon NPN Epitaxial Planar Transistor BVCEO 160V IC 1.5A BTD1857AM3 RCESAT(MAX) 0.3 Description High BV CEO High current capability Complementary to BTB1236AM3 Pb-free lead plating and halogen-free package Symbol Outline BTD1857AM3

 6.2. Size:159K  cystek
btd1857at3.pdf pdf_icon

BTD1857AJ3G

Spec. No. C855T3 Issued Date 2004.12.15 CYStech Electronics Corp. Revised Date 2006.06.12 Page No. 1/4 Silicon NPN Epitaxial Planar Transistor BTD1857AT3 Description High BV CEO High current capability Complementary to BTB1236AT3 Pb-free package Symbol Outline BTD1857AT3 TO-126 B Base C Collector E C B E Emitter Absolute Maximum

Otros transistores... BTD1816I3 , BTD1816J3 , BTD1857A3 , BTD1857AD3 , BTD1857AE3 , BTD1857AFP , BTD1857AI3 , BTD1857AJ3 , TIP31C , BTD1857AL3 , BTD1857AM3 , BTD1857AT3 , BTD1858A3 , BTD1858I3 , BTD1858T3 , BTD1864I3 , BTD1980J3 .

 

 

 


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