BTD2150AM3 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BTD2150AM3  📄📄 

Código: CF

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 2 W

Tensión colector-base (Vcb): 80 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 90 MHz

Capacitancia de salida (Cc): 45 pF

Ganancia de corriente contínua (hFE): 120

Encapsulados: SOT-89

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BTD2150AM3 datasheet

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BTD2150AM3

Spec. No. C848M3-A Issued Date 2002.08.18 CYStech Electronics Corp. Revised Date 2013.12.30 Page No. 1/7 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 50V IC 3A BTD2150AM3 RCE(SAT) typ. 125m Features Low VCE(sat), VCE(sat)=0.1 V (typical), at IC / IB = 1A / 50mA Excellent current gain characteristics Complementary to BTB1424AM3 Pb-free lead

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BTD2150AM3

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BTD2150AM3

Spec. No. C848D3 Issued Date 2004.07.06 CYStech Electronics Corp. Revised Date 2005.11.16 Page No. 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTD2150AD3 Features Low VCE(sat), VCE(sat)=0.25 V (typical), at IC / IB = 2A / 200mA Excellent current gain characteristics Complementary to BTB1424AD3 Pb-free package Symbol Outline TO-126ML BTD2150A

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BTD2150AM3

Spec. No. C848N3-A Issued Date 2004.03.26 CYStech Electronics Corp. Revised Date 2012.11.28 Page No. 1/8 Low V NPN Epitaxial Planar Transistor CE(sat) BVCEO 50V IC 4A BTD2150N3 RCE(SAT) typ. 90m Features Low VCE(sat), typically 0.18V at IC / IB = 2A / 0.1A Excellent current gain characteristics Complementary to BTB1424N3 Pb-free lead plating a

MOSTRAR MÁS

Otros transistores... BTD2098AM3, BTD2098LN3, BTD2098M3, BTD2114N3, BTD2118LJ3, BTD2118T3, BTD2150A3, BTD2150AD3, 8050, BTD2150FP, BTD2150L3, BTD2150N3, BTD2195J3, BTD2195L3, BTD2195M3, BTD2195T3, BTD2444L3