BTD2150L3 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BTD2150L3
Código: CF
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 5 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 3 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 100 MHz
Capacitancia de salida (Cc): 15 pF
Ganancia de corriente contínua (hfe): 270
Paquete / Cubierta: SOT-223
Búsqueda de reemplazo de transistor bipolar BTD2150L3
BTD2150L3 Datasheet (PDF)
btd2150l3.pdf
Spec. No. : C848L3 Issued Date : 2004.10.07 CYStech Electronics Corp.Revised Date :2010.11.05 Page No. : 1/7 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 50VIC 3ABTD2150L3 RCESAT (Max) 145m Features Low V , V = 0.25V (typical), at I /I =2A/0.2A CE(sat) CE(sat) C B Excellent current gain characteristics Complementary to BTB1424L3 Pb-free package
btd2150am3.pdf
Spec. No. : C848M3-A Issued Date : 2002.08.18 CYStech Electronics Corp.Revised Date : 2013.12.30 Page No. : 1/7 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 50VIC 3ABTD2150AM3 RCE(SAT) typ. 125m Features Low VCE(sat), VCE(sat)=0.1 V (typical), at IC / IB = 1A / 50mA Excellent current gain characteristics Complementary to BTB1424AM3 Pb-free lead
btd2150n3.pdf
Spec. No. : C848N3-A Issued Date : 2004.03.26 CYStech Electronics Corp.Revised Date : 2012.11.28 Page No. : 1/8 Low V NPN Epitaxial Planar Transistor CE(sat)BVCEO 50VIC 4ABTD2150N3 RCE(SAT) typ. 90m Features Low VCE(sat), typically 0.18V at IC / IB = 2A / 0.1A Excellent current gain characteristics Complementary to BTB1424N3 Pb-free lead plating a
btd2150fp.pdf
Spec. No. : C848FP Issued Date : 2011.09.14 CYStech Electronics Corp.Revised Date : 2011.11.22 Page No. : 1/6 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 50V IC 3ABTD2150FP RCESAT 125m typ.Features Low VCE(sat), VCE(sat)=0.25 V (typical), at IC / IB = 2A / 0.2A Excellent current gain characteristics Complementary to BTB1424FP Pb-free lead plati
btd2150a3.pdf
Spec. No. : C848A3 Issued Date : 2005.02.04 CYStech Electronics Corp.Revised Date :2010.11.05 Page No. : 1/7 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 50VIC 3ABTD2150A3 RCESAT (Typ) 125m Features Low VCE(sat), typically 0.25V at IC / IB = 2A / 100mA 0.1V at IC / IB = 1A / 50mA Excellent current gain characteristics Complementary to BTB1424A3
btd2150ad3.pdf
Spec. No. : C848D3 Issued Date : 2004.07.06 CYStech Electronics Corp.Revised Date : 2005.11.16 Page No. : 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTD2150AD3 Features Low VCE(sat), VCE(sat)=0.25 V (typical), at IC / IB = 2A / 200mA Excellent current gain characteristics Complementary to BTB1424AD3 Pb-free package Symbol Outline TO-126ML BTD2150A
Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 13009 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
