BTD5213J3 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BTD5213J3
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 10 W
Tensión colector-base (Vcb): 100 V
Tensión colector-emisor (Vce): 80 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 100 MHz
Capacitancia de salida (Cc): 20 pF
Ganancia de corriente contínua (hFE): 160
Encapsulados: TO-252
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BTD5213J3 datasheet
btd5213j3.pdf
Spec. No. C304J3 Issued Date 2010.12.06 CYStech Electronics Corp. Revised Date 2012.05.16 Page No. 1/7 General Purpose NPN Epitaxial Planar Transistor BTD5213J3 Features Low collector saturation voltage High breakdown voltage, V =80V (min.) CEO High collector current, I =1A (DC) C(max) Pb-free lead plating package Symbol Outline TO-252(DPAK)
btd5213m3.pdf
Spec. No. C307M3 Issued Date 2007.01.10 CYStech Electronics Corp. Revised Date 2014.01.23 Page No. 1/7 NPN Epitaxial Planar Transistor BTD5213M3 Features High VCEO, VCEO=100V High IC, IC(DC)=1A Low VCE(sat) Good current gain linearity Complementary to BTB1260M3 Pb-free lead plating and halogen-free package Symbol Outline BTD5213M3 SOT
btd5213l3.pdf
Spec. No. C304L3 Issued Date 2007.05.04 CYStech Electronics Corp. Revised Date 2011.07.28 Page No. 1/7 General Purpose NPN Epitaxial Planar Transistor BTD5213L3 Description General purpose mainly intended for use in medium power industrial application and for audio amplifier output stage. Features High collector current and low V CE(SAT). Complement to BTB
Otros transistores... BTD2195T3 , BTD2444L3 , BTD2444N3 , BTD2444S3 , BTD2498N3 , BTD2510F3 , BTD2568L3 , BTD4512F3 , S9013 , BTD5213L3 , BTD5213M3 , BTD5510F3 , BTD5765B3 , BTD5974B3 , BTD6055J3 , BTD6055M3 , BTD7520J3 .
History: 2SA2126 | 2SA2169 | 2SC2613K | 2SC5245A
History: 2SA2126 | 2SA2169 | 2SC2613K | 2SC5245A
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