BTD5213L3 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Spec. No. : C304L3 Issued Date : 2007.05.04 CYStech Electronics Corp.Revised Date :2011.07.28 Page No. : 1/7 General Purpose NPN Epitaxial Planar Transistor BTD5213L3Description General purpose mainly intended for use in medium power industrial application and for audio amplifier output stage. Features High collector current and low V CE(SAT). Complement to BTB

Spec. No. : C307M3 Issued Date : 2007.01.10 CYStech Electronics Corp.Revised Date : 2014.01.23 Page No. : 1/7 NPN Epitaxial Planar Transistor BTD5213M3 Features High VCEO, VCEO=100V High IC, IC(DC)=1A Low VCE(sat) Good current gain linearity Complementary to BTB1260M3 Pb-free lead plating and halogen-free package Symbol Outline BTD5213M3 SOT

Spec. No. : C304J3 Issued Date : 2010.12.06 CYStech Electronics Corp.Revised Date : 2012.05.16 Page No. : 1/7 General Purpose NPN Epitaxial Planar Transistor BTD5213J3Features Low collector saturation voltage High breakdown voltage, V =80V (min.) CEO High collector current, I =1A (DC) C(max) Pb-free lead plating package Symbol Outline TO-252(DPAK)