BTN1053A3
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BTN1053A3
Código: N1053
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.75
W
Tensión colector-base (Vcb): 150
V
Tensión colector-emisor (Vce): 80
V
Tensión emisor-base (Veb): 6
V
Corriente del colector DC máxima (Ic): 2
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 140
MHz
Capacitancia de salida (Cc): 23
pF
Ganancia de corriente contínua (hfe): 300
Paquete / Cubierta:
TO-92
Búsqueda de reemplazo de transistor bipolar BTN1053A3
BTN1053A3
Datasheet (PDF)
..1. Size:268K cystek
btn1053a3.pdf 
Spec. No. : C818A3 Issued Date : 2013.05.22 CYStech Electronics Corp.Revised Date : 2013.06.25 Page No. : 1/7 Low Vcesat NPN Epitaxial Planar Transistor BTN1053A3 Features Excellent H Characteristics up to 1A FE Low Saturation Voltage, V =0.1V(typ)@I =1A, I =50mA CE(sat) C B 5A peak pulse current Pb-free lead plating and halogen-free package Symbol Outl
7.1. Size:152K cystek
btn1053l3.pdf
Spec. No. : C818L3 Issued Date : 2003.08.13 CYStech Electronics Corp. Revised Date : Page No. : 1/5 NPN Epitaxial Planar TransistorBTN1053L3 Features 5W power dissipation Excellent H Characteristics up to 1A FE Low Saturation Voltage VCE(sat)=0.15V(typ)(IC=1A,IB=50mA). 5A peak pulse current Absolute Maximum Ratings (Ta=25C) Parameter Symbol Limits
7.2. Size:297K cystek
btn1053k3.pdf
Spec. No. : C818K3 Issued Date : 2013.10.01 CYStech Electronics Corp.Revised Date : 2013.12.25 Page No. : 1/8 NPN Epitaxial Planar TransistorBVCEO 75VIC 2.5ABTN1053K3RCESAT(MAX) 250m Features Excellent H Characteristics up to 1A FE Low Saturation Voltage, V =0.15V(typ)@I =1A, I =50mA CE(sat) C B 5A peak pulse current Pb-free lead plating and hal
7.3. Size:302K cystek
btn1053i3.pdf
Spec. No. : C818I3 Issued Date : 2010.01.26 CYStech Electronics Corp.Revised Date : 2014.02.26 Page No. : 1/7 NPN Epitaxial Planar TransistorBVCEO 80VIC 2.5ABTN1053I3RCESAT(MAX) 150m Features Excellent H Characteristics up to 1A FE Low Saturation Voltage, V =0.11V(typ)@I =1A, I =50mA CE(sat) C B 5A peak pulse current Pb-free lead plating and hal
7.4. Size:262K cystek
btn1053m3.pdf
Spec. No. : C818M3 Issued Date : 2003.04.04 CYStech Electronics Corp.Revised Date :2013.08.12 Page No. : 1/8 NPN Epitaxial Planar TransistorBVCEO 75VIC 2.5ABTN1053M3RCESAT(MAX) 250m Features 2W power dissipation Excellent H Characteristics up to 1A FE Low Saturation Voltage, V =0.15V(typ)@I =1A, I =50mA CE(sat) C B 5A peak pulse current Pb
Otros transistores... 2SA1771
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, 2SA18
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, 2SA1800
, 2SA1800O
, 2SA1800R
, 2SA1800Y
.
