BTN1053I3 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Spec. No. : C818I3 Issued Date : 2010.01.26 CYStech Electronics Corp.Revised Date : 2014.02.26 Page No. : 1/7 NPN Epitaxial Planar TransistorBVCEO 80VIC 2.5ABTN1053I3RCESAT(MAX) 150m Features Excellent H Characteristics up to 1A FE Low Saturation Voltage, V =0.11V(typ)@I =1A, I =50mA CE(sat) C B 5A peak pulse current Pb-free lead plating and hal

Spec. No. : C818L3 Issued Date : 2003.08.13 CYStech Electronics Corp. Revised Date : Page No. : 1/5 NPN Epitaxial Planar TransistorBTN1053L3 Features 5W power dissipation Excellent H Characteristics up to 1A FE Low Saturation Voltage VCE(sat)=0.15V(typ)(IC=1A,IB=50mA). 5A peak pulse current Absolute Maximum Ratings (Ta=25C) Parameter Symbol Limits

Spec. No. : C818K3 Issued Date : 2013.10.01 CYStech Electronics Corp.Revised Date : 2013.12.25 Page No. : 1/8 NPN Epitaxial Planar TransistorBVCEO 75VIC 2.5ABTN1053K3RCESAT(MAX) 250m Features Excellent H Characteristics up to 1A FE Low Saturation Voltage, V =0.15V(typ)@I =1A, I =50mA CE(sat) C B 5A peak pulse current Pb-free lead plating and hal

Spec. No. : C818A3 Issued Date : 2013.05.22 CYStech Electronics Corp.Revised Date : 2013.06.25 Page No. : 1/7 Low Vcesat NPN Epitaxial Planar Transistor BTN1053A3 Features Excellent H Characteristics up to 1A FE Low Saturation Voltage, V =0.1V(typ)@I =1A, I =50mA CE(sat) C B 5A peak pulse current Pb-free lead plating and halogen-free package Symbol Outl

Spec. No. : C818M3 Issued Date : 2003.04.04 CYStech Electronics Corp.Revised Date :2013.08.12 Page No. : 1/8 NPN Epitaxial Planar TransistorBVCEO 75VIC 2.5ABTN1053M3RCESAT(MAX) 250m Features 2W power dissipation Excellent H Characteristics up to 1A FE Low Saturation Voltage, V =0.15V(typ)@I =1A, I =50mA CE(sat) C B 5A peak pulse current Pb