BTN2369S3 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BTN2369S3  📄📄 

Código: 1J

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.3 W

Tensión colector-base (Vcb): 40 V

Tensión colector-emisor (Vce): 15 V

Tensión emisor-base (Veb): 4.5 V

Corriente del colector DC máxima (Ic): 0.2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 500 MHz

Capacitancia de salida (Cc): 4 pF

Ganancia de corriente contínua (hFE): 70

Encapsulados: SOT-323

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BTN2369S3 datasheet

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BTN2369S3

Spec. No. C229S3 Issued Date 2011.10.05 CYStech Electronics Corp. Revised Date Page No. 1/6 High Frequency NPN Switching Transistor BTN2369S3 Description High transition frequency, f =500MHz(min) T High current, IC(max)=200mA Low saturation voltage, V =0.3V(max) CE(SAT) Pb-free lead plating package Symbol Outline BTN2369S3 SOT-323 B Base

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BTN2369S3

Spec. No. C229N3 Issued Date 2004.08.09 CYStech Electronics Corp. Revised Date 2013.02.23 Page No. 1/6 High Frequency NPN Switching Transistor BTN2369N3 Description High transition frequency, f =500MHz(min) T High current, IC(max)=500mA Low saturation voltage, V =0.3V(max) CE(SAT) Pb-free lead plating and halogen-free package Symbol Outline BTN

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BTN2369S3

Spec. No. C229A3 Issued Date 2004.08.09 CYStech Electronics Corp. Revised Date Page No. 1/3 High Frequency NPN Switching Transistor BTN2369A3 Description High transition frequency, f =500MHz(min) T High current, IC(max)=200mA Low saturation voltage, V =0.3V(max) CE(SAT) Symbol Outline BTN2369A3 TO-92 B Base C Collector E Emitter C B E

Otros transistores... BTN1053L3, BTN1053M3, BTN1101E3, BTN2222A3, BTN2222AL3, BTN2222AN3, BTN2369A3, BTN2369N3, MJE350, BTN3501E3, BTN3501F3, BTN3501I3, BTN3501J3, BTN3904A3, BTN3904N3, BTN3904S3, BTN5551A3