BTP8550A3 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BTP8550A3
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.625 W
Tensión colector-base (Vcb): 40 V
Tensión colector-emisor (Vce): 25 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 1.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 100 MHz
Capacitancia de salida (Cc): 20 pF
Ganancia de corriente contínua (hFE): 120
Encapsulados: TO-92
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BTP8550A3 datasheet
btp8550a3.pdf
Spec. No. C313A3 Issued Date 2003.07.30 CYStech Electronics Corp. Revised Date 2007.04.19 Page No. 1/5 General Purpose PNP Epitaxial Planar Transistor BTP8550A3 Description The BTP8550A3 is designed for use in output amplifier of portable radios in class B push pull operation. Features Large collector current , IC= -1.5A Low VCE(sat) Complementary to BT
btp8550ba3.pdf
Spec. No. C313A3-B Issued Date 2004.03.04 CYStech Electronics Corp. Revised Date 2009.02.02 Page No. 1/6 General Purpose PNP Epitaxial Planar Transistor BTP8550BA3 Description The BTP8550BA3 is designed for use in 2W output amplifier of portable radios in class B push pull operation. Features Large collector current , IC= -1.5A Low VCE(sat) Complemen
btp8550n3.pdf
Spec. No. C313N3-H Issued Date 2003.09.26 CYStech Electronics Corp. Revised Date 2009.02.02 Page No. 1/6 Low V PNP Epitaxial Planar Transistor CESAT BTP8550N3 Features Low VCE(SAT), -0.22V(typically) at IC=-500mA/IB=-50mA. Complementary to BTN8050N3. Pb-free package Symbol Outline BTP8550N3 SOT-23 B Base C Collector E Emitter Absolute Maxi
Otros transistores... BTP2014L3 , BTP2907A3 , BTP2907AL3 , BTP2907AN3 , BTP2907SL3 , BTP3906A3 , BTP3906N3 , BTP5401A3 , 2SD1047 , BTP8550BA3 , BTP8550N3 , BTP9050N3 , BTPA56N3 , BTPA92A3 , BTPA94A3 , BTPA94N3 , BU941ZE3 .
History: BTPA92A3
History: BTPA92A3
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