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BTP8550A3 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BTP8550A3
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.625 W
   Tensión colector-base (Vcb): 40 V
   Tensión colector-emisor (Vce): 25 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 1.5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 100 MHz
   Capacitancia de salida (Cc): 20 pF
   Ganancia de corriente contínua (hfe): 120
   Paquete / Cubierta: TO-92
 

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BTP8550A3 Datasheet (PDF)

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BTP8550A3

Spec. No. : C313A3 Issued Date : 2003.07.30 CYStech Electronics Corp.Revised Date : 2007.04.19Page No. : 1/5 General Purpose PNP Epitaxial Planar Transistor BTP8550A3Description The BTP8550A3 is designed for use in output amplifier of portable radios in class B push pull operation. Features Large collector current , IC= -1.5A Low VCE(sat) Complementary to BT

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BTP8550A3

Spec. No. : C313A3-B Issued Date : 2004.03.04 CYStech Electronics Corp.Revised Date : 2009.02.02 Page No. : 1/6 General Purpose PNP Epitaxial Planar Transistor BTP8550BA3Description The BTP8550BA3 is designed for use in 2W output amplifier of portable radios in class B push pull operation. Features Large collector current , IC= -1.5A Low VCE(sat) Complemen

 7.2. Size:259K  cystek
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BTP8550A3

Spec. No. : C313N3-H Issued Date : 2003.09.26 CYStech Electronics Corp.Revised Date :2009.02.02 Page No. : 1/6 Low V PNP Epitaxial Planar Transistor CESATBTP8550N3Features Low VCE(SAT), -0.22V(typically) at IC=-500mA/IB=-50mA. Complementary to BTN8050N3. Pb-free package Symbol Outline BTP8550N3 SOT-23 BBase CCollector EEmitter Absolute Maxi

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History: IDI8005 | 2SD2646 | DTA114TUA | KT3151A9

 

 
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