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3DD13009K . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 3DD13009K
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 120 W
   Tensión colector-base (Vcb): 700 V
   Tensión colector-emisor (Vce): 400 V
   Tensión emisor-base (Veb): 9 V
   Corriente del colector DC máxima (Ic): 12 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 4 MHz
   Ganancia de corriente contínua (hfe): 5
   Paquete / Cubierta: TO220C TO3PB

 Búsqueda de reemplazo de transistor bipolar 3DD13009K

 

3DD13009K Datasheet (PDF)

 ..1. Size:596K  jilin sino
3dd13009k.pdf

3DD13009K 3DD13009K

NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R3DD13009K MAIN CHARACTERISTICS Package I 12A CV 400V CEOP (TO-220C) 100W CP (TO-3PB) 120W C APPLICATIONS Energy-saving ligh Electronic ballasts High frequency switching power

 ..2. Size:210K  inchange semiconductor
3dd13009k.pdf

3DD13009K 3DD13009K

isc Silicon NPN Power Transistor 3DD13009KDESCRIPTIONHigh breakdown voltageHigh switching speedHigh current capabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSEnergy-saving lighElectronic ballastsHigh frequency switching power supplyHigh frequency power transformABSOLUTE MAXIMUM RATINGS(T =25)aSYM

 6.1. Size:198K  lge
3dd13009.pdf

3DD13009K 3DD13009K

3DD13009(NPN) TO-220 TransistorTO-2201. BASE 2. COLLECTOR 3. EMITTER 3 21Features power switching applications MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V Dimensions in inches and (millimeters)IC Collector Current -Contin

 6.2. Size:845K  jilin sino
3dd13009e.pdf

3DD13009K 3DD13009K

NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R3DD13009E MAIN CHARACTERISTICS Package I 12A CV 400V CEOP (TO-220C) 100W CP (TO-3PB) 120W CTO-220C-S1 TO-220C APPLICATIONS Energy-saving ligh Electronic ballasts High fre

 6.3. Size:449K  blue-rocket-elect
br3dd13009z8f.pdf

3DD13009K 3DD13009K

MJE13009Z8(BR3DD13009Z8F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic lighting ballast applications.

 6.4. Size:423K  blue-rocket-elect
br3dd13009x8f.pdf

3DD13009K 3DD13009K

MJE13009X8(BR3DD13009X8F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic lighting ballast applications.

 6.5. Size:463K  blue-rocket-elect
br3dd13009x7r.pdf

3DD13009K 3DD13009K

MJE13009X7(BR3DD13009X7R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic lighting ballast applications .

 6.6. Size:445K  blue-rocket-elect
br3dd13009x9p.pdf

3DD13009K 3DD13009K

MJE13009X9(BR3DD13009X9P) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-3P NPN Silicon NPN Transistor in a TO-3P Plastic Package. / Features High Speed Switching / Applications High frequency electronic lighting ballast applications. / Equivalent Circuit

 6.7. Size:153K  crhj
3dd13009a8.pdf

3DD13009K 3DD13009K

NPN R 3DD13009 A8 3DD13009 A8 NPN VCEO 400 V IC 12 A Ptot TC=25 100 W

 6.8. Size:153K  crhj
3dd13009c8.pdf

3DD13009K 3DD13009K

NPN R 3DD13009 C8 3DD13009 C8 NPN VCEO 400 V IC 12 A Ptot TC=25 100 W

 6.9. Size:154K  crhj
3dd13009 x8d.pdf

3DD13009K 3DD13009K

NPN R 3DD13009 X8D 3DD13009 X8D VCEO 200 V NPN IC 12 A Ptot TC=25 100 W

 6.10. Size:155K  crhj
3dd13009 an.pdf

3DD13009K 3DD13009K

NPN R 3DD13009 AN 3DD13009 AN NPN VCEO 400 V IC 12 A Ptot TC=25 120 W

 6.11. Size:154K  crhj
3dd13009 c8.pdf

3DD13009K 3DD13009K

NPN R 3DD13009 C8 3DD13009 C8 NPN VCEO 400 V IC 12 A Ptot TC=25 100 W

 6.12. Size:153K  crhj
3dd13009 a8.pdf

3DD13009K 3DD13009K

NPN R 3DD13009 A8 3DD13009 A8 NPN VCEO 400 V IC 12 A Ptot TC=25 100 W

 6.13. Size:159K  crhj
3dd13009an.pdf

3DD13009K 3DD13009K

NPN R 3DD13009 AN 3DD13009 AN NPN VCEO 400 V IC 12 A Ptot TC=25 120 W

 6.14. Size:155K  crhj
3dd13009x8d.pdf

3DD13009K 3DD13009K

NPN R 3DD13009 X8D 3DD13009 X8D VCEO 200 V NPN IC 12 A Ptot TC=25 100 W

 6.15. Size:164K  wuxi china
3dd13009a8.pdf

3DD13009K 3DD13009K

NPN R 3DD13009 A8 3DD13009 A8 NPN VCEO 400 V IC 12 A Ptot TC=25 100 W

 6.16. Size:155K  wuxi china
3dd13009an.pdf

3DD13009K 3DD13009K

NPN R 3DD13009 AN 3DD13009 AN NPN VCEO 400 V IC 12 A Ptot TC=25 120 W

 6.17. Size:1254K  cn xch
3dd13009an.pdf

3DD13009K 3DD13009K

3DD13009ANNPN Main Characteristics VCEO 400 V IC 12 A Ptot TC=25 120 W Applications Energy-saving light Electronic lamp ballasts Electronic transformer High frequency switching power supplyTO-3P Commonly power am

 6.18. Size:253K  inchange semiconductor
3dd13009n.pdf

3DD13009K 3DD13009K

isc Silicon NPN Power Transistor 3DD13009NDESCRIPTIONHigh breakdown voltageHigh switching speedHigh current capabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSEnergy-saving lighHigh frequency switching power supplyHigh frequency power transformABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI

 6.19. Size:253K  inchange semiconductor
3dd13009nl.pdf

3DD13009K 3DD13009K

isc Silicon NPN Power Transistor 3DD13009NLDESCRIPTIONHigh breakdown voltageHigh switching speedHigh current capabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSEnergy-saving lighHigh frequency switching power supplyHigh frequency power transformABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN

 6.20. Size:216K  inchange semiconductor
3dd13009.pdf

3DD13009K 3DD13009K

INCHANGE Semiconductorisc Silicon NPN Power Transistor 3DD13009DESCRIPTIONCollectorEmitter Sustaining Voltage: V = 400V(Min.)CEO(SUS)Collector Saturation Voltage: V = 1.5 (Max) @ I = 8.0ACE(sat) CSwitching Time: t = 0.7s(Max.)@ I = 8.0Af C100% testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesig

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History: 2SA225 | 2N2950

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