2SD2004 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD2004

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1.2 W

Tensión colector-emisor (Vce): 160 V

Corriente del colector DC máxima (Ic): 1.5 A

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 56

Encapsulados: MRT

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2SD2004 datasheet

 ..1. Size:87K  rohm
 2sd2004.pdf pdf_icon

2SD2004

 8.1. Size:55K  panasonic
 2sd2000.pdf pdf_icon

2SD2004

Power Transistors 2SD2000 Silicon NPN triple diffusion planar type For power switching Unit mm 10.0 0.2 4.2 0.2 Features 5.5 0.2 2.7 0.2 High-speed switching Satisfactory linearity of foward current transfer ratio hFE 3.1 0.1 Large collector power dissipation PC Full-pack package which can be installed to the heat sink with one screw 1.3 0.2 1.4 0.1 Absolute Ma

 8.2. Size:69K  wingshing
 2sd200.pdf pdf_icon

2SD2004

NPN TRIPLE DIFFUSED 2SD200 PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT APPLICATIONS(No Damper Diode) TO-3 High Collector-Base Voltage(VCBO=1500V) High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 800 V Emitter-Base voltage VEBO 6 V Collector C

 8.3. Size:177K  inchange semiconductor
 2sd200.pdf pdf_icon

2SD2004

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD200 DESCRIPTION High Collector-Base Breakdown Voltage- V = 1500V (Min.) (BR)CBO Low Collector Saturation Voltage- High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV horizontal output applications. ABSOLUTE MAXIMUM RATINGS(T =2

MOSTRAR MÁS

Otros transistores... S8050MC, S8050MD, NJW0281G, NJW0302G, 2SC5614, 2SC5800, 2SD2195, 2SD2398, TIP42, 2SA1193K, 129NT1A-1, 129NT1B-1, 129NT1V-1, 129NT1G-1, 129NT1D-1, 129NT1E-1, 129NT1ZH-1