2SA715F Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SA715F

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 10 W

Tensión colector-base (Vcb): 35 V

Tensión colector-emisor (Vce): 35 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 2.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 160 MHz

Ganancia de corriente contínua (hFE): 60

Encapsulados: TO126F

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2SA715F datasheet

 ..1. Size:548K  blue-rocket-elect
2sa715f.pdf pdf_icon

2SA715F

2SA715F(BR3CA715QF) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-126F PNP Silicon PNP transistor in a TO-126F Plastic Package. / Features 2SC1162F(BR3DA1162QF) Complementary pair with 2SC1162F(BR3DA1162QF). / Applications Low frequency power amplifier applications.

 8.1. Size:29K  hitachi
2sa715.pdf pdf_icon

2SA715F

2SA715 Silicon PNP Epitaxial Application Low frequency power amplifier complementary pair with 2SC1162 Outline TO-126 MOD 1. Emitter 2. Collector 3. Base 1 2 3 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Rating Unit Collector to base voltage VCBO 35 V Collector to emitter voltage VCEO 35 V Emitter to base voltage VEBO 5 V Collector current IC 2.5 A Collector

 8.2. Size:188K  jmnic
2sa715.pdf pdf_icon

2SA715F

JMnic Product Specification Silicon PNP Power Transistors 2SA715 DESCRIPTION With TO-126 package Complement to type 2SC1162 APPLICATIONS Low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute Maximun Ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base volta

 8.3. Size:197K  inchange semiconductor
2sa715.pdf pdf_icon

2SA715F

isc Silicon PNP Power Transistor 2SA715 DESCRIPTION Good Linearity of h FE Collector-Emitter Breakdown Voltage- V = -35V (Min) (BR)CEO Complement to Type 2SC1162 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER

Otros transistores... 2SC4977, 2SA1013T, 2SA1015M, 2SA1577W, 2SA1930I, 2SA2050, 2SA3802, 2SA562M, BD139, 2SA733M, 2SA933A, 2SA953M, 2SA966T, 2SB1261L, 2SB1426, 2SB649TA, 2SB772B