2SC2216M Todos los transistores

2SC2216M(BR3DG2216M) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features ,h FE High gain, good hFE linearity. / Applications TV final picture IF amplifier applications. / Equival

2SC2216,2SC2717 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC2216,2SC2717 TV Final Picture IF Amplifier Applications Unit mm High gain Gpe = 33dB (typ.) (f = 45 MHz) Good linearity of h . FE Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit 2SC2216 50 Collector-base voltage VCBO V 2SC2717 30 2SC2216 45 Collector-emitter VCEO

2SC2216 0.05 A , 50 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES Amplifier dissipation NPN Silicon G H Base Emitter Collector J A D Millimeter REF. Min. Max. B A 4.40 4.70 B 4.30 4.70 K C 12.70 - D 3.30 3.81 E 0.36 0.56 F 0.36 0.51 E C F

2SC2216(NPN) TO-92 Bipolar Transistors 1. BASE TO-92 2. EMITTER 3. COLLECTOR Features Amplifier dissipation NPN Silicon MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 4 V Dimensions in inches and (millimeters) IC Collector Current -Continuo