2SC3356W Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC3356W
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 20 V
Tensión colector-emisor (Vce): 12 V
Tensión emisor-base (Veb): 3 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 7000 MHz
Ganancia de corriente contínua (hFE): 50
Encapsulados: SOT323
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2SC3356W datasheet
..1. Size:656K blue-rocket-elect
2sc3356w.pdf 
2SC3356W(BR3DG3356W) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-323 NPN Silicon NPN transistor in a SOT-323 Plastic Package. / Features Low noise and high power gain. / Applications low noise amplifier at VHF, UHF and C
0.1. Size:167K lrc
l2sc3356wt1g.pdf
DATA SHEET LESHAN RADIO COMPANY, LTD. DESCRIPTION L2SC3356WT1G The L2SC3356WT1is an NPN silicon epitaxial transistor designed for S-L2SC3356WT1G low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. 3 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
0.2. Size:167K lrc
l2sc3356wt1g l2sc3356wt3g.pdf
DATA SHEET LESHAN RADIO COMPANY, LTD. DESCRIPTION L2SC3356WT1G The L2SC3356WT1is an NPN silicon epitaxial transistor designed for S-L2SC3356WT1G low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. 3 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
7.1. Size:257K nec
ne856 2sc5011 2sc5006 2sc4226 2sc3355 2sc3603 2sc3356 2sc3357 2sc3603 2sc4093.pdf
NEC's NPN SILICON HIGH NE856 FREQUENCY TRANSISTOR SERIES FEATURES HIGH GAIN BANDWIDTH PRODUCT fT = 7 GHz LOW NOISE FIGURE 1.1 dB at 1 GHz HIGH COLLECTOR CURRENT 100 mA HIGH RELIABILITY METALLIZATION 35 (MICRO-X) 00 (CHIP) LOW COST DESCRIPTION NEC's NE856 series of NPN epitaxial silicon transistors is designed for low cost amplifier and oscillator application
7.2. Size:91K nec
2sc3356.pdf
DATA SHEET DATA SHEET SILICON TRANSISTOR 2SC3356 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DIMENSIONS The 2SC3356 is an NPN silicon epitaxial transistor designed for low (Units mm) noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. 2.8 0.2 1.5 0.65+0.1 -0.15 FEATURES Low Noise and High G
7.3. Size:219K utc
2sc3356.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SC3356 NPN SILICON TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER 3 3 2 2 DESCRIPTION 1 1 The UTC 2SC3356 is designed for such applications as DC/DC SOT-23-3 SOT-23 converters, supply line switching, battery charger, LCD backlighting, (JEDEC TO-236) (EIAJ SC-59) peripheral drivers, Driver in low supply voltage applications (e.g. lamps an
7.4. Size:842K jiangsu
2sc3356.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SC3356 TRANSISTOR (NPN) SOT 23 FEATURES Low Noise and High Gain High Power Gain MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER V Collector-Base Voltage 20 V CBO 3. COLLECTOR V Collector-Emitter Voltage 12 V CEO V Emitter-Bas
7.5. Size:643K htsemi
2sc3356.pdf
2SC3356 TRANSISTOR (NPN) FEATURES SOT-23 / SOT-23-3L Power dissipation PCM 0.2 W (Tamb=25 ) Collector current 1. BASE ICM 0.1 A 2. EMITTER Collector-base voltage 3. COLLECTOR V(BR)CBO 20 V Operating and storage junction temperature range TJ, Tstg -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test
7.6. Size:277K gsme
2sc3356.pdf
Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM3356 MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter Voltage VCEO 12 Vdc C
7.7. Size:218K lge
2sc3356 2sc3356 sot-23-3l.pdf
2SC3356 SOT-23-3L Transistor(NPN) SOT-23-3L 1. BASE 2. EMITTER 2.92 3. COLLECTOR 0.35 1.17 Features 2.80 1.60 Low noise amplifier at VHF, UHF and CATV band. Low Noise and High Gain High Power Gain 0.15 1.90 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector- Base Voltage 20 V VC
7.8. Size:1092K lge
2sc3356.pdf
2SC3356 Silicon Epitaxial Planar Transistor A SOT-23 Dim Min Max FEATURES A 2.70 3.10 E Low noise and high gain. B 1.10 1.50 K B NF=1.1dB TYP.,Ga=11dB TYP. C 1.0 Typical @VCE=10V,IC=7mA, f=1.0GHz D 0.4 Typical E 0.35 0.48 J High power gain. MAG=13dB TYP. D G 1.80 2.00 @VCE=10V,IC=20mA,f=1.0GHz. G H 0.02 0.1 J 0.1 Typical H K 2.20 2.60 APPLICATIONS C All Dime
7.9. Size:402K wietron
2sc3356.pdf
2SC3356 High-Frequency Amplifier Transistor 3 NPN Silicon 1 P b Lead(Pb)-Free 2 FEATURES 1. BASE * Low noise amplifier at VHF, UHF and CATV band. 2. EMITTER 3. COLLECTOR * Low Noise and High Gain * High Power Gain SOT-23 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector- Base Voltage 20 V VCEO Collector-Emitter Voltage 12 V VEBO Emi
7.10. Size:140K lrc
l2sc3356lt1g.pdf
DATA SHEET LESHAN RADIO COMPANY, LTD. L2SC3356LT1G DESCRIPTION The L2SC3356LT1 is an NPN silicon epitaxial transistor designed for S-L2SC3356LT1G low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. 3 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capab
7.11. Size:140K lrc
l2sc3356lt1g l2sc3356lt3g.pdf
DATA SHEET LESHAN RADIO COMPANY, LTD. L2SC3356LT1G DESCRIPTION The L2SC3356LT1 is an NPN silicon epitaxial transistor designed for S-L2SC3356LT1G low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. 3 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capab
7.12. Size:1257K kexin
2sc3356.pdf
SMD Type Transistors SMD Type NPN Transistors 2SC3356 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Low noise and high gain. NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz 1 2 High power gain. +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 MAG = 13 dB Typ. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz 1.Base 2.Emitter 3.collector Absolute Maximum Rating
7.13. Size:473K globaltech semi
gst2sc3356.pdf
GST2SC3356 High-Frequency Amplifier Transistor NPN Silicon Product Description Features This device is designed as a general purpose Low noise amplifier at VHF, UHF and CATV amplifier and switch. band Low Noise and High Gain High Power Gain Lead(Pb)-Free Packages & Pin Assignments GST2SC3356F(SOT-23) Pin Description 1 Base 2 Emitter 3 Collector Marking Informati
7.15. Size:1126K anbon
2sc3356.pdf
2SC3356 NPN Silicon Epitaxial Transistor Features Low noise and high gain. NF = 1.1 dB Typ., Ga =11dBTyp. @VCE =10V, IC =7mA, f =1.0GHz High power gain. MAG = 13 dB Typ. @VCE =10V, IC =20mA, f =1.0GHz hFE Classification Marking R25 Pb Rank S hFE 120 220 Lead-free SOT-23 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO 20 V Collector
7.16. Size:661K jsmsemi
2sc3356-r25.pdf
2SC3356-R25 Silicon Epitaxial Planar Transistor Silicon Epitaxial Planar Transistor 2SC3356-R25 FEATURES Low noise and high gain. NF=1.1dB TYP.,Ga=11dB TYP. @VCE=10V,IC=7mA, f=1.0GHz High power gain. MAG=13dB TYP. @VCE=10V,IC=20mA,f=1.0GHz. APPLICATIONS SOT-23 Designed for low noise amplifier at VHF,UHF and CATV band. ORDERING INFORMATION Type No. Marking Package C
7.17. Size:1194K cn evvo
2sc3356-r23 2sc3356-r24 2sc3356-r25 2sc3356-r26.pdf
2SC3356 NPN Transistors 3 Features 2 Low noise and high gain. 1. Gate NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz 2. Source 1 3. Drain High power gain. MAG = 13 dB Typ. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz Simplified outline(SOT23) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO 20 V Collector to emitter
7.18. Size:1949K cn shikues
2sc3356s-b 2sc3356s-c 2sc3356s-d.pdf
2SC3356S NPN N RF TRA N SILICON ANSISTOR 3 U equency low sistor Ultra high fre w noise trans Silicon epitax process. xial bipolar p H gain, low no High power g oise figure, hi c range and ideal current characteris igh dynamic n stics, 2 SOT-23 chip package, mai p inly used in VHF, UHF and CATV hi cy wideband amplifier. igh frequenc d low noise a 1 SOT-23
7.20. Size:1175K cn yongyutai
2sc3356.pdf
2SC3356 TRANSISTOR (NPN) MARKING Equivalent Circuit SOT-23 1.BASE 2.EMITTER 3.COLLECTOR FEATURES High transition frequency Small rbb Cc and high gain. Small NF. ABSOLUTE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Parameter Symbol Value Unit VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 11 V VEBO Emitter-Base Voltage 3 V IC Collec
7.22. Size:217K cn fosan
2sc3356.pdf
ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD 2SC3356 MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter Voltage VCEO 12 Vdc Collector-Base Voltage VCBO 20 Vdc Emitter-Base Voltage VEBO Vdc 3.0 Colle
7.23. Size:797K cn hottech
2sc3356.pdf
2SC3356 BIPOLAR TRANSISTOR (NPN) FEATURES High power gain Low Noise For Low Noise Amplifier at UHF/VHF/CATV Band Surface Mount device SOT-23 MECHANICAL DATA Case SOT- 23 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.008 grams (approximate) MAXIMUM RATINGS (T = 25 C unless otherwise noted) A Parameter Symbo
7.24. Size:601K cn yw
2sc3356-sc1-r-r 2sc3356-sf3-r-r 2sc3356-sd3-r-r 2sc3356-t93-r-k.pdf
2SC3356 (NPN) High-Frequency Amplifier Transistor 1 TO-92 3 FEATURES 2 * SOT23 1 Low noise and high gain. NF=1.1dB Typ. f=1.0 GHz Ga=11dB Typ.@Vce=10V,Ic=7mA 3 * High power gain. 2 1 MAG=13dB Typ.@Vce=10V,Ic=20mA f=1.0 GHz SOT-23-3L 3 2 1 SOT-523 1 B 2 E 3 C
7.25. Size:399K inchange semiconductor
2sc3356.pdf
INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC3356 DESCRIPTION Low Noise and High Gain NF = 1.1 dB TYP., G = 11 dB TYP. a @V = 10 V, I = 7 mA, f = 1.0 GHz CE C High Power Gain MAG = 13 dB TYP. @V = 10 V, I = 20 mA, f = 1.0 GHz CE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low noise amplifier at
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